elm13407ca

Single P-channel MOSFET
ELM13407CA-S
■General description
■Features
ELM13407CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-4.1A (Vgs=-10V)
Rds(on) < 52mΩ (Vgs=-10V)
Rds(on) < 87mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-4.1
-3.5
-20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
1.4
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
65
85
43
90
125
60
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM13407CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vgs=-10V
Rds(on) Id=-4.1A
Ta=125°C
Vgs=-4.5V, Id=-3A
Gfs Vds=-5V, Id=-4A
Vsd
-1
-5
μA
±100
nA
Is=-1A, Vgs=0V
-1.0
-10
-1.8
-3.0
V
A
40.5
52.0
57.0
64.0
8.2
73.0
87.0
5.5
-0.77
-1.00
V
-2.2
A
840
pF
pF
Is
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
-30
Vgs=0V, Vds=-15V, f=1MHz
700
120
Vgs=0V, Vds=0V, f=1MHz
75
10
Vgs=-4.5V, Vds=-15V
Id=-4A
14.3
7.0
3.1
15
18.0
mΩ
mΩ
S
pF
Ω
nC
nC
nC
3.0
8.6
nC
ns
Vgs=-10V, Vds=-15V
5.0
ns
td(off) RL=3.6Ω, Rgen=3Ω
tf
trr
If=-4A, dIf/dt=100A/μs
Qrr
28.2
13.5
27
ns
ns
ns
NOTE :
15
36
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM13407CA-S
■Typical electrical and thermal characteristics
20
-10V
10
-5V
-4.5V
10
-3.5V
5
Vgs=-3V
0
0.00
Vds=-5V
8
-4V
-Id (A)
-Id (A)
15
6
4
125°C
2
25°C
0
1.00
2.00
3.00
4.00
5.00
0
1
100
4
1.6
80
Normalized On-Resistance
Rds(on) (m� )
3
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Figure 1: On-Region Characteristics
Vgs=-4.5V
60
Vgs=-10V
40
20
Vgs=-4.5V
1.4
Vgs=-10V
1.2
1
Id=-2A
0.8
0
2
4
6
8
10
0
25
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
140
1E+00
Id=-2A
120
1E-01
100
1E-02
-Is (A)
Rds(on) (m� )
2
125°C
80
125°C
1E-03
25°C
1E-04
60
1E-05
25°C
40
1E-06
20
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM13407CA-S
1000
10
Vds=-15V
Id=-4A
800
Capacitance (pF)
-Vgs (Volts)
8
6
4
2
Ciss
600
400
Coss
Crss
200
0
0
4
8
12
0
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C
Ta=25°C
0.1s
10ms
10s
0.1
1
DC
-Vds (Volts)
10
Z�ja Normalized Transient
Thermal Resistance
30
Tj(max)=150°C
Ta=25°C
20
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
25
10
1s
0.1
20
30
100�s 10�s
1ms
1
15
40
Rds(on)
limited
10
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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