elm13413ca

Single P-channel MOSFET
ELM13413CA-S
■General description
■Features
ELM13413CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-3A (Vgs=-4.5V)
Rds(on) < 97mΩ (Vgs=-4.5V)
Rds(on) < 130mΩ (Vgs=-2.5V)
Rds(on) < 190mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-20
V
±8
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
-3.0
Id
Ta=70°C
Pulsed drain current
-2.4
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
-15
1.4
0.9
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
70
100
63
90
125
80
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM13413CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-16V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
-0.30
-15
Vgs=-4.5V
Id=-3A
Ta=125°C
Rds(on)
Vgs=-2.5V, Id=-2.6A
Vgs=-1.8V, Id=-1A
Gfs
Vds=-5V, Id=-3A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=0V, Vds=-10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-3A
Vgs=-4.5V, Vds=-10V
td(off) RL=3.3Ω, Rgen=3Ω
tf
trr
If=-3A, dIf/dt=100A/μs
Qrr
NOTE :
V
-1
-5
μA
±100
nA
-0.55
-1.00
V
A
81
97
111
108
146
135
130
190
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Forward transconductance
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-20
4
7
-0.78
mΩ
mΩ
mΩ
S
-1.00
-2
V
A
540
pF
72
49
12
pF
pF
Ω
6.1
0.6
nC
nC
1.6
10
nC
ns
12
ns
44
22
21.0
ns
ns
ns
7.5
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM13413CA-S
■Typical electrical and thermal characteristics
6
15
-4.5V
-3.0V
Vds=-5V
-2.5V
-8V
4
10
-Id (A)
-Id (A)
-2.0V
2
5
125°C
Vgs=-1.5V
25°C
0
0
1
2
3
4
-Vds (Volts)
Fig 1: On-Region Characteristics
0
5
0
200
1
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
2
1.8
Vgs=-2.5V
Normalized On-Resistance
Vgs=-1.8V
Rds(on) (m� )
0.5
150
Vgs=-2.5V
100
Vgs=-4.5V
50
0
2
4
1.6
Vgs=-1.8V
1.4
Vgs=-4.5V
1.2
1
0.8
6
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
200
1E+01
1E+00
1E-01
-Is (A)
Rds(on) (m� )
Id=-4A
150
125°C
100
25°C
125°C
1E-02
25°C
1E-03
1E-04
1E-05
50
0
2
4
6
8
1E-06
0.0
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single P-channel MOSFET
ELM13413CA-S
800
5
Vds=-10V
Id=-3A
Capacitance (pF)
-Vgs (Volts)
4
3
2
1
0
0
2
4
6
Ciss
600
400
Crss
200
Coss
0
8
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
20
100�s
10.0
10�s
1ms
Rds(on)
limited
0.1s
10ms
10s
DC
1
10
100
10
-Vds (Volts)
10
0.01
1
10
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
Pd
0.1
0.01
0.00001
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
Tj(max)=150°C
Ta=25°C
0
0.001
0.1
1
20
5
1s
0.1
15
15
Power (W)
-Id (Amps)
Tj(max)=150°C
Ta=25°C
1.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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