elm13419ca

Single P-channel MOSFET
ELM13419CA-S
■General description
■Features
ELM13419CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
•
Vds=-20V
Id=-3.5A (Vgs=-10V)
Rds(on) < 75mΩ (Vgs=-10V)
Rds(on) < 95mΩ (Vgs=-4.5V)
Rds(on) < 145mΩ (Vgs=-2.5V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Vds
Vgs
-20
±12
V
V
Id
-3.5
-2.8
A
1
Idm
-15
A
2
Pd
1.4
0.9
W
1
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
65
Max.
90
Unit
°C/W
85
43
125
60
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM13419CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
-20
-0.5
Vds=-16V
Vgs=0V
Ta=55°C
-2.5
±1
Vds=0V, Vgs=±10V
Gate threshold voltage
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
-0.7
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-15
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rg
Qg
Qgs
Qgd
±10
-0.9
-1.4
μA
μA
μA
V
A
59
83
75
105
76
111
6.8
95
145
mΩ
mΩ
S
-0.81
-0.95
-2.0
V
A
620
Vgs=0V, Vds=-10V, f=1MHz
512
77
62
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
9.2
13.0
Ω
5.5
6.6
nC
Vgs=-10V
Id=-3.5A
Ta=125°C
Vgs=-4.5V, Id=-3A
Vgs=-2.5V, Id=-1A
Vds=-5V, Id=-3.5A
Is=-1A, Vgs=0V
Vgs=-4.5V, Vds=-10V
Id=-3.5A
td(on)
tr
Vgs=-10V, Vds=-10V
td(off) RL=2.8Ω, Rgen=3Ω
tf
trr
Qrr
V
If=-3.5A, dIf/dt=100A/μs
If=-3.5A, dIf/dt=100A/μs
NOTE :
-0.65
mΩ
0.8
1.9
nC
nC
5.0
6.7
28.0
ns
ns
ns
13.5
9.8
2.7
ns
ns
nC
12.0
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM13419CA-S
■Typical electrical and thermal characteristics
25
-9.0V
-8.0V
20
Vds=-5V
-5.0V
8
-7.0V
-4.0V
-6.0V
15
-Id (A)
-Id (A)
10
-10.0V
-3.0V
10
-2.5V
-2.0V
5
0
1
2
3
125°C
4
2
Vgs=-1.5V
0
6
4
25°C
0
5
0
0.5
1.5
2
2.5
3
3.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
160
1.6
Id=-3A, Vgs=-4.5V
140
Vgs=-2.5V
Normalized On-Resistance
Rds(on) (m�)
1
120
100
Vgs=-4.5V
80
60
Vgs=-10V
40
Id=-3.5A, Vgs=-10V
1.4
1.2
Id=-1A, Vgs=-2.5V
1.0
20
0
2
4
6
8
0.8
10
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
200
Id=-3.5A
180
1E+00
160
125°C
1E-01
125°C
140
-Is (A)
Rds(on) (m�)
25
120
100
25°C
1E-02
1E-03
1E-04
80
25°C
1E-05
60
1E-06
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM13419CA-S
800
5
Id=-3.5A
Capacitance (pF)
-Vgs (Volts)
4
3
2
1
0
0
1
2
3
4
5
Ciss
600
400
200
Coss
Crss
0
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
Tj(max)=150°C
Ta=25°C
40
10�s
100�s
1ms
10ms
1s
10s
0.1
0.1
Tj(max)=150°C
Ta=25°C
20
0.1s
DC
1
10
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
10
-Vds (Volts)
10
15
30
Rds(on)
limited
1.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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