Single P-channel MOSFET ELM33401CA-S ■General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V) Rds(on) < 215mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -20 V Gate-source voltage Vgs ±12 -3.0 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A -1.4 -10 1.25 A 3 W 0.80 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 166 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 Note D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM33401CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -20 V Vds=-16V, Vgs=0V -1 Vds=-16V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V μA ±100 nA -0.45 -0.80 -1.20 -6 V A 1 mΩ 1 S 1 -1.2 V 1 -1.6 -3 A A 3 Vgs=-10V, Id=-2A 72 85 Rds(on) Vgs=-4.5V, Id=-2A 98 118 150 16 215 Forward transconductance Gfs Vgs=-2.5V, Id=-1A Vds=-5V, Id=-2A Diode forward voltage Vsd Is=-1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current DYNAMIC PARAMETERS Is Ism Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-6V, f=1MHz 430 235 pF pF Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss 95 pF Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time td(off) Id=-1A, Rgen=6Ω tf Qg tr Vgs=-4.5V, Vds=-10V Id=-2A Vgs=-4.5V, Vds=-10V NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 7.6 10.0 3.2 2.0 nC 2 nC nC 2 2 11 32 22 ns 2 55 ns 2 38 32 68 55 ns ns 2 2 NIKO-SEM SingleLogic P-channel P-Channel Level MOSFET Enhancement ModeELM33401CA-S Field Effect Transistor ■Typical electrical and thermal characteristics PA102FMG SOT-23 Lead-Free 4-3 Mar-22-2006 P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor Single P-channel MOSFET PA102FMG SOT-23 Lead-Free ELM33401CA-S Body Diode Forward Voltage Variation with Source Current and Temperature -Is - Reverse Drain Current(A) 10 V GS = 0V 1 T A = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0 0.2 0.4 0.8 1.0 0.6 -V - Body Diode Forward Voltage(V) 1.2 4-4 4 Mar-22-2006