elm33401ca

Single P-channel MOSFET
ELM33401CA-S
■General description
■Features
ELM33401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-3A
Rds(on) < 85mΩ (Vgs=-10V)
Rds(on) < 118mΩ (Vgs=-4.5V)
Rds(on) < 215mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-20
V
Gate-source voltage
Vgs
±12
-3.0
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-1.4
-10
1.25
A
3
W
0.80
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Typ.
Max.
Unit
166
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
Note
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM33401CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-20
V
Vds=-16V, Vgs=0V
-1
Vds=-16V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
μA
±100
nA
-0.45 -0.80 -1.20
-6
V
A
1
mΩ
1
S
1
-1.2
V
1
-1.6
-3
A
A
3
Vgs=-10V, Id=-2A
72
85
Rds(on) Vgs=-4.5V, Id=-2A
98
118
150
16
215
Forward transconductance
Gfs
Vgs=-2.5V, Id=-1A
Vds=-5V, Id=-2A
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Is
Ism
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-6V, f=1MHz
430
235
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
95
pF
Gate-source charge
Gate-drain charge
Qgs
Qgd
Turn-on delay time
Turn-on rise time
td(on)
Turn-off delay time
Turn-off fall time
td(off) Id=-1A, Rgen=6Ω
tf
Qg
tr
Vgs=-4.5V, Vds=-10V
Id=-2A
Vgs=-4.5V, Vds=-10V
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
7.6
10.0
3.2
2.0
nC
2
nC
nC
2
2
11
32
22
ns
2
55
ns
2
38
32
68
55
ns
ns
2
2
NIKO-SEM
SingleLogic
P-channel
P-Channel
Level MOSFET
Enhancement
ModeELM33401CA-S
Field Effect Transistor
■Typical electrical and thermal characteristics
PA102FMG
SOT-23
Lead-Free
4-3
Mar-22-2006
P-Channel Logic Level Enhancement
NIKO-SEM
Mode Field Effect Transistor
Single P-channel MOSFET
PA102FMG
SOT-23
Lead-Free
ELM33401CA-S
Body Diode Forward Voltage Variation with Source Current and Temperature
-Is - Reverse Drain Current(A)
10
V GS = 0V
1
T A = 125°C
0.1
25°C
0.01
-55°C
0.001
0.0001
0
0.2
0.4
0.8
1.0
0.6
-V - Body Diode Forward Voltage(V)
1.2
4-4
4
Mar-22-2006
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