elm33403ca

Single P-channel MOSFET
ELM33403CA-S
■General description
■Features
ELM33403CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-4A
Rds(on) < 64mΩ (Vgs=-4.5V)
Rds(on) < 79mΩ (Vgs=-2.5V)
Rds(on) < 120mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-20
V
Gate-source voltage
Vgs
±12
-4.0
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-3.0
-20
1.25
A
3
W
0.80
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Typ.
Max.
Unit
Rθja
75
100
°C/W
■Pin configuration
■Circuit
SOT-23(TOP VIEW)
3
1
2
Note
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM33403CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-20
V
Vds=-16V, Vgs=0V
-1
Vds=-16V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
μA
±100
nA
-0.45 -0.80 -1.20
-20
V
A
1
mΩ
1
S
1
-1.2
V
1
-1.6
-3
A
A
3
Vgs=-4.5V, Id=-4A
55
64
Rds(on) Vgs=-2.5V, Id=-3A
62
79
90
12
120
Forward transconductance
Gfs
Vgs=-1.8V, Id=-2A
Vds=-5V, Id=-4A
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Is
Ism
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
950
115
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
75
pF
9.4
nC
2
Gate-source charge
Gate-drain charge
Qgs
Qgd
2.0
3.0
nC
nC
2
2
Turn-on delay time
Turn-on rise time
td(on)
6.3
ns
2
3.2
ns
2
Turn-off delay time
Turn-off fall time
td(off) Id=-1A, Rgen=6Ω
tf
38.0
12.0
ns
ns
2
2
Qg
tr
Vgs=-4.5V, Vds=-10V
Id=-4A
Vgs=-4.5V, Vds=-10V
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
P6402FMG
P-Channel Logic Level Enhancement
NIKO-SEM
Mode Field Effect Transistor
SOT-23
Lead-Free
Single P-channel MOSFET
ELM33403CA-S
■Typical electrical and thermal characteristics
15
ID, Drain current(A)
-3.0V
-2.5V
VGS= -4.5V
-3.5V
12
R
, Normrlized
Drain-source on-resistance
On-Region Characteristics.
9
DS(ON)
-2.0V
6
3
-1.5V
0
0
1
2
3
2
1.6
-2.5V
1.4
1
ID= -4A
VGS= -4.5V
1.1
1
DS(ON)
-4.5V
0.8
0
3
-25
0
0.14
0.1
TA= 125°C
TA= 25°C
0.06
25
50
75
100
125
0.02
150
1
Is, Reverse Drain Current (A)
TA= -55°C
8
25°C
125°C
6
4
2
1
1.5
2
VGS, Gate to Source Voltage(V)
2
3
4
5
-VGS, Gate to Source Voltage(V)
Transfer Characteristics.
VDS= -5V
ID, Drain Current(A)
15
ID= -2A
0.18
TJ, Junction Temperature(°C)
0.5
12
R
0.8
0
9
0.22
DS(ON)
0.9
10
6
On-Resistance Variation with Gate-to-Source Voltage.
, On-resistance(� )
R
, Normalized
Drain-source on-resistance
-3.5V
-ID, Drain Current(A)
1.2
0.7
-50
-3.0V
1.2
4
On-Resistance Variation with Temperature.
1.3
VGS= -2.0V
1.8
-VGS, Drain to Source Voltage(V)
1.4
On-Resistance Variation with
Drain Current and Gate Voltage.
10
Body Diode Forword Voltage Variation
with Source Current and Temperature.
VGS= 0V
1
TA= 125°C
0.1
3
4-3
-55° C
0.6
0.8
0.01
0.001
0.0001
0
2.5
25°C
0.2
0.4
1
VSD, Body Diode Forward Voltage(V)
1.2
Mar-22-2006
P6402FMG
P-Channel Logic Level Enhancement
NIKO-SEM
Mode Field Effect Transistor
SOT-23
Lead-Free
Single P-channel MOSFET
ELM33403CA-S
Capacitance Characteristics
5
1400
VDS= -5V
ID = -4A
f = 1MHz
VGS= 0 V
1200
4
-10V
3
2
1
Capacitance(pF)
-VGS, Gate-Source Voltage (V)
Gate-Charge Characteristics
1000
Ciss
800
600
400
Coss
200
0
0
0
2
4
6
8
10
12
Crss
0
20
30
25
Single Pulse Maximum Power Dissipation.
Maxmum Safe Operating Area.
100
50
RDS(ON) LIMIT
1ms
100ms
1s
1
0.01
0.1
10ms
30
20
DC
VGS =-10V
SINGLE PULSE
R� JA=100°C/W
TA=25°C
0.1
SINGLE PULSE
R� JA=100°C/W
TA=25°C
40
100� s
Power(W)
ID,Drain Current(A)
15
-VDS, Drain to Source Voltage (V)
Qg Gate Charge(nC)
10
10
5
10
10
1
0
0.001
100
0.01
-VDS,Drain-Source Voltage(V)
0.1
1
10
Single Pulse Time(SEC)
100
1
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
0.2
R¿ JA(t) = r(t) * R¿
R¿ JA=100°C/W
0.1
0.05
0.02
0.01
t1
Single Pulse
t2
0.005
TJ-TA=P*R¿ JA(t)
Duty Cycle, D= t1/ t2
0.002
0.001
0.0001
��
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
Transisent Thermal Response Curve.
0.001
0.01
0.1
t1 Time(SEC)
4
4-4
1
10
100
300
Mar-22-2006
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