Single P-channel MOSFET ELM33405CA-S ■General description ■Features ELM33405CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-2A Rds(on) < 150mΩ (Vgs=-10V) Rds(on) < 250mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±20 -2.0 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A -1.4 -10 1.25 A 3 W 0.80 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 166 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 Note D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM33405CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±20V μA ±100 nA -2.5 V A 1 mΩ 1 -1.2 S V 1 1 Is -1.6 A Ism -3 A Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd -1.0 -5 -1.5 Vgs=-10V, Id=-2A 100 150 Vgs=-4.5V, Id=-1A 180 250 Vds=-5V, Id=-2A Is=-1A, Vgs=0V 16 3 Ciss 410 pF Coss Vgs=0V, Vds=-15V, f=1MHz Crss 220 85 pF pF Gate-source charge Qg Qgs 5.80 10.00 nC 0.85 nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 1.70 13 nC ns 2 2 Turn-on rise time Turn-off delay time tr 36 ns 2 42 ns 2 34 ns 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Vgs=-10V, Vds=-15V Id=-2A Vgs=-10V, Vds=-15V td(off) Id=-1A, Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Single P-channel MOSFET P-Channel ELM33405CA-S Logic Level Enhancement Modecharacteristics Field Effect Transistor ■Typical electrical and thermal NIKO-SEM 4-3 PA503EMG SOT-23 Lead-Free NIKO-SEM P-Channel LevelMOSFET Enhancement Single Logic P-channel Mode Field Effect Transistor ELM33405CA-S PA503EMG SOT-23 Lead-Free 4-4 4 Mar-22-2006