elm33407ca

Single P-channel MOSFET
ELM33407CA-S
■General description
■Features
ELM33407CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-20V
Id=-3A
Rds(on) < 150mΩ (Vgs=-4.5V)
Rds(on) < 250mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-20
V
Gate-source voltage
Vgs
±12
-3.0
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-1.4
-10
1.25
A
3
W
0.80
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Typ.
Max.
Unit
166
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
Note
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM33407CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-16V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±12V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Max. body-diode continuous current
-20
Vds=-16V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-0.5
-6
-0.9
μA
±100
nA
-1.2
V
A
Vgs=-4.5V, Id=-2A
100
150
mΩ
Vgs=-2.5V, Id=-1A
180
250
mΩ
Vds=-5V, Id=-2A
Is=-1A, Vgs=0V
16
-1.2
S
V
Is
-1.6
A
Ism
-3
A
Gfs
Vsd
1
1
1
1
3
Ciss
410
pF
Coss Vgs=0V, Vds=-6V, f=1MHz
Crss
220
85
pF
pF
Gate-source charge
Qg
Qgs
5.80 10.00 nC
0.85
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
1.70
13
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
36
ns
2
42
ns
2
34
ns
2
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Vgs=-4.5V, Vds=-10V
Id=-2A
Vgs=-4.5V, Vds=-10V
td(off) Id=-1A, Rgen=6Ω
tf
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
NIKO-SEM
SingleLogic
P-channel
P-Channel
LevelMOSFET
Enhancement
PA502FMG
ModeELM33407CA-S
Field Effect Transistor
SOT-23
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
-Is - Reverse Drain Current(A)
10
V GS = 0V
1
0.1
25° C
0.01
-55° C
0.001
0.0001
4-3
T A = 125° C
0
0.2
0.4
0.8
1.0
0.6
-VSD - Body Diode Forward Voltage(V)
1.2
NIKO-SEM
P-Channel
Logic Level
Enhancement
Single P-channel
MOSFET
Mode Field Effect Transistor
ELM33407CA-S
4-4
PA502FMG
SOT-23
Lead-Free
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