elm33413ca

Single P-channel MOSFET
ELM33413CA-S
■General description
■Features
ELM33413CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-30V
Id=-4A
Rds(on) < 64mΩ (Vgs=-4.5V)
Rds(on) < 80mΩ (Vgs=-2.5V)
Rds(on) < 120mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±12
-4.0
-3.0
V
Idm
-20
A
Pd
1.25
0.80
W
Tj, Tstg
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Id
A
3
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
Typ.
75
Max.
100
■Circuit
SOT-23(TOP VIEW)
3
1
Unit
°C/W
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Note
Single P-channel MOSFET
ELM33413CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-30
V
Vds=-24V, Vgs=0V
-1
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±12V
μA
±100
nA
-0.45 -0.80 -1.20
-20
V
A
Vgs=-4.5V, Id=-4A
55
64
mΩ
Rds(on) Vgs=-2.5V, Id=-3A
62
80
mΩ
1
90
12
120
mΩ
S
1
-1.2
V
1
-1.6
-3
A
A
3
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
1
Forward transconductance
Gfs
Vgs=-1.8V, Id=-2A
Vds=-5V, Id=-4A
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Is
Ism
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
950
115
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
75
pF
9.4
nC
2
Gate-source charge
Gate-drain charge
Qgs
Qgd
2.0
3.0
nC
nC
2
2
Turn-on delay time
Turn-on rise time
td(on)
6.3
ns
2
3.2
ns
2
Turn-off delay time
Turn-off fall time
td(off) Id=-1A, Rgen=6Ω
tf
38.0
12.0
ns
ns
2
2
Qg
tr
Vgs=-4.5V, Vds=-15V
Id=-4A
Vgs=-4.5V, Vds=-10V
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
P6403FMG
P-Channel Logic Level Enhancement
Single
MOSFET
ModeP-channel
Field Effect Transistor
NIKO-SEM
SOT-23
Lead-Free
ELM33413CA-S
■Typical electrical and thermal characteristics
Typical Electrical Characteristics
ID, Drain current(A)
-3.0V
-2.5V
VGS= -4.5V
-3.5V
12
R
, Normrlized
Drain-source on-resistance
On-Region Characteristics.
15
9
DS(ON)
-2.0V
6
3
-1.5V
0
0
1
2
3
On-Resistance Variation with
Drain Current and Gate Voltage.
2
VGS= -2.0V
1.8
1.6
-2.5V
1.4
-4.5V
0.8
4
0
1.1
DS(ON)
1
-25
0
0.14
0.1
TA= 125°C
TA= 25°C
0.06
25
50
75
100
125
0.02
150
1
2
Is, Reverse Drain Current (A)
TA= -55°C
8
25°C
125°C
6
4
2
1
1.5
2
VGS, Gate to Source Voltage(V)
3
4
5
-VGS, Gate to Source Voltage(V)
Transfer Characteristics.
VDS= -5V
ID, Drain Current(A)
15
ID= -2A
0.18
TJ, Junction Temperature(°C)
0.5
12
R
0.8
0
9
0.22
DS(ON)
0.9
10
6
On-Resistance Variation with Gate-to-Source Voltage.
, On-resistance(Ω)
R
, Normalized
Drain-source on-resistance
ID= -4A
VGS= -4.5V
1.2
0.7
-50
3
-ID, Drain Current(A)
On-Resistance Variation with Temperature.
1.3
-3.5V
1
-VGS, Drain to Source Voltage(V)
1.4
-3.0V
1.2
10
Body Diode Forword Voltage Variation
with Source Current and Temperature.
VGS= 0V
1
TA= 125°C
0.1
4-3
3
-55° C
0.6
0.8
0.01
0.001
0.0001
0
2.5
25°C
0.2
0.4
1
VSD, Body Diode Forward Voltage(V)
1.2
Jul-20-2006
P6403FMG
P-Channel Logic Level Enhancement
Mode
Field Effect Transistor
Single
P-channel
MOSFET
NIKO-SEM
SOT-23
Lead-Free
ELM33413CA-S
Capacitance Characteristics
5
ID = -4A
1400
VDS= -10V
f = 1MHz
VGS= 0 V
1200
4
-15V
3
2
1
Capacitance(pF)
-VGS, Gate-Source Voltage (V)
Gate-Charge Characteristics
1000
Ciss
800
600
400
Coss
200
0
0
0
2
4
6
8
10
12
Crss
0
20
30
25
Single Pulse Maximum Power Dissipation.
Maxmum Safe Operating Area.
100
50
RDS(ON) LIMIT
1ms
100ms
1s
1
0.1
0.01
0.1
10ms
30
20
DC
VGS =-10V
SINGLE PULSE
RθJA=100°C/W
TA=25°C
SINGLE PULSE
RθJA=100°C/W
TA=25°C
40
100μs
Power(W)
ID,Drain Current(A)
15
-VDS, Drain to Source Voltage (V)
Qg Gate Charge(nC)
10
10
5
10
10
1
100
0
0.001
0.01
-VDS,Drain-Source Voltage(V)
10
0.1
1
Single Pulse Time(SEC)
100
1
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
0.2
RθJA(t) = r(t) * RθJA
RθJA=100°C/W
0.1
0.05
0.02
0.01
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
Transisent Thermal Response Curve.
t1
Single Pulse
t2
0.005
TJ-TA=P*RθJA(t)
Duty Cycle, D= t1/ t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 Time(SEC)
4-4 4
1
10
100
300
Jul-20-2006
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