elm53401ca

Single P-channel MOSFET
ELM53401CA-S
■General description
■Features
ELM53401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-20V
Id=-1.8A
Rds(on) < 520mΩ (Vgs=-4.5V)
Rds(on) < 870mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Vds
-20
V
Gate-source voltage
Vgs
±12
-1.8
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
A
-1.2
-6
1.25
A
W
0.80
-55 to 150
Tj, Tstg
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Typ.
Max.
Unit
120
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
5-1
Single P-channel MOSFET
ELM53401CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=85°C
-5
Vds=0V, Vgs=±12V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
-0.4
-0.7
Qg
Qgs
Qgd
μA
±100
nA
-1.0
V
A
Vgs=-4.5V, Id=-1.8A
420
520
mΩ
Vgs=-2.5V, Id=-1.5A
770
870
mΩ
Vds=-10V, Id=-0.4A
Is=-0.15A, Vgs=0V
1
-0.65
-1.20
S
V
-1
A
100
pF
pF
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Gfs
Vsd
-20
Vds=-20V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
Vgs=0V, Vds=-10V, f=1MHz
70
20
10
Vgs=-4.5V, Vds=-10V
Id=-0.25A
td(on)
Vgs=-4.5V, Vds=-10V
tr
RL=30Ω, Id=-0.2A
td(off)
Rgen=10Ω
tf
5-2
pF
1.0
0.1
0.3
1.3
nC
nC
nC
10
10
15
15
ns
ns
40
60
ns
30
50
ns
AFP2307A
Alfa-MOS
20V P-Channel
Single
P-channel
MOSFET
Technology
Enhancement Mode MOSFET
ELM53401CA-S
■Typical electrical and thermal characteristics
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
www.alfa-mos.com
5-3
Page 3
AFP2307A
Alfa-MOS
20V P-Channel
Technology
Single P-channel MOSFET
Enhancement Mode MOSFET
ELM53401CA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
www.alfa-mos.com
5-4
Page 4
Alfa-MOS
Single P-channel MOSFET
Technology
AFP2307A
20V P-Channel
ELM53401CA-S
Enhancement Mode MOSFET
■Test circuit and waveform
Package Information ( SOT-23 )
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
5-5
www.alfa-mos.com
Page 5
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