elm53405ca

Single P-channel MOSFET
ELM53405CA-S
■General description
■Features
ELM53405CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-3.6A
Rds(on) < 145mΩ (Vgs=-10V)
Rds(on) < 180mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±20
-3.6
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
A
-2.4
-15
1.25
A
W
0.80
-55 to 150
Tj, Tstg
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Typ.
Max.
Unit
120
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
5-1
Single P-channel MOSFET
ELM53405CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-24V, Vgs=0V, Ta=85°C
-30
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
-1.0
-10
Qg
Qgs
Qgd
μA
±100
nA
-2.5
V
A
Vgs=-10V, Id=-2.8A
132
145
mΩ
Vgs=-4.5V, Id=-2.4A
168
180
mΩ
Vds=-5V, Id=-4A
Is=-1.5A, Vgs=0V
10
-0.7
-1.3
S
V
-1.5
A
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Gfs
Vsd
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
Vgs=0V, Vds=-15V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-2.5A
td(on)
Vgs=-10V, Vds=-15V
tr
RL=7.5Ω, Id=-2A
td(off)
Rgen=1Ω
tf
5-2
170
50
pF
pF
30
pF
2.5
0.8
1.0
nC
nC
nC
5
10
10
16
ns
ns
10
16
ns
5
10
ns
AFP2303A
Alfa-MOS
30V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM53405CA-S
Typical Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.B May 2011
www.alfa-mos.com
Page 3
5-3
AFP2303A
Alfa-MOS
30V P-Channel
Enhancement Mode MOSFET
Technology
Single P-channel MOSFET
Typical Characteristics
ELM53405CA-S
©Alfa-MOS Technology Corp.
Rev.B May 2011
www.alfa-mos.com
Page 4
5-4
Alfa-MOS
30V P-Channel
Enhancement Mode MOSFET
Technology
Single P-channel MOSFET
Typical Characteristics
ELM53405CA-S
■Test circuit and waveform
©Alfa-MOS Technology Corp.
Rev.B May 2011
www.alfa-mos.com
Page 5
5-5
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