Single P-channel MOSFET ELM53405CA-S ■General description ■Features ELM53405CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-3.6A Rds(on) < 145mΩ (Vgs=-10V) Rds(on) < 180mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±20 -3.6 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range A -2.4 -15 1.25 A W 0.80 -55 to 150 Tj, Tstg °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 120 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 5-1 Single P-channel MOSFET ELM53405CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-24V, Vgs=0V, Ta=85°C -30 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time -1.0 -10 Qg Qgs Qgd μA ±100 nA -2.5 V A Vgs=-10V, Id=-2.8A 132 145 mΩ Vgs=-4.5V, Id=-2.4A 168 180 mΩ Vds=-5V, Id=-4A Is=-1.5A, Vgs=0V 10 -0.7 -1.3 S V -1.5 A Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Gfs Vsd -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=-15V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-2.5A td(on) Vgs=-10V, Vds=-15V tr RL=7.5Ω, Id=-2A td(off) Rgen=1Ω tf 5-2 170 50 pF pF 30 pF 2.5 0.8 1.0 nC nC nC 5 10 10 16 ns ns 10 16 ns 5 10 ns AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM53405CA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.B May 2011 www.alfa-mos.com Page 3 5-3 AFP2303A Alfa-MOS 30V P-Channel Enhancement Mode MOSFET Technology Single P-channel MOSFET Typical Characteristics ELM53405CA-S ©Alfa-MOS Technology Corp. Rev.B May 2011 www.alfa-mos.com Page 4 5-4 Alfa-MOS 30V P-Channel Enhancement Mode MOSFET Technology Single P-channel MOSFET Typical Characteristics ELM53405CA-S ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.B May 2011 www.alfa-mos.com Page 5 5-5