elm36403ea

Single P-channel MOSFET
ELM36403EA-S
■General description
■Features
ELM36403EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-5A
Rds(on) < 51mΩ (Vgs=-10V)
Rds(on) < 85mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±20
-5.0
-4.2
V
-20
2.0
1.4
A
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
A
3
W
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤5s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
62.5
Unit
°C/W
110.0
50.0
°C/W
°C/W
■Circuit
SOT-26(TOP VIEW)
6
1
5
2
Note
4
3
D
Pin No.
1
Pin name
DRAIN
2
3
4
DRAIN
GATE
SOURCE
5
6
DRAIN
DRAIN
4-1
G
S
Single P-channel MOSFET
ELM36403EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous current
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-1.0
-20
-1.8
μA
±100
nA
-3.0
V
A
Vgs=-10V, Id=-5A
42
51
mΩ
Vgs=-4.5V, Id=-4A
66
85
mΩ
Vds=-10V, Id=-5A
Is=-1A, Vgs=0V
10
-1
S
V
Is
-3
A
Ism
-6
A
Gfs
Vsd
1
1
1
1
3
Ciss
700
pF
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
120
75
pF
pF
Gate-source charge
Qg
Qgs
12.5
2.1
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
3.5
7
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
10
ns
2
30
ns
2
22
13.4
ns
nC
2
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Body diode reverse recovery charge
Vgs=-10V, Vds=-15V
Id=-5A
Vgs=-10V, Vds=-15V
td(off) Id=-1A, Rgen=6Ω
tf
Qrr
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
NIKO-SEM
Single P-channel MOSFET
P-Channel Logic
Level Enhancement
ELM36403EA-S
P5103EAG
TSOP-6
Lead-Free
Mode Field Effect Transistor_Preliminary
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
10
-Is - Reverse Drain Current(A)
V GS = 0V
25°C
0.1
-55°C
0.01
0.001
0.0001
4-3
T A = 125°C
1
0
0.2
0.4
0.6
0.8
1.0
-VSD - Body Diode Forward Voltage(V)
1.2
1.4
Single P-channel MOSFET
Level Enhancement
NIKO-SEM P-Channel Logic
ELM36403EA-S
Mode Field Effect Transistor_Preliminary
P5103EAG
TSOP-6
Lead-Free
4-4
May-18-2006
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