Single P-channel MOSFET ELM5K8473A-S ■General description ■Features ELM5K8473A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-60V Id=-4.8A Rds(on) = 135mΩ (Vgs=-10V) Rds(on) = 155mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Gate-source voltage Vdss Vgs -60 ±20 V V Id -4.8 -3.6 A Idm -10 A Pd 2.8 1.2 W Tj, Tstg - 55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit SOT-223(TOP VIEW) 1 2 Unit °C/W 3 D Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE 5-1 G S Single P-channel MOSFET ELM5K8473A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-48V, Vgs=0V, Ta=85°C -30 Vds=0V, Vgs=±12V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time -1.0 -5 Qg Qgs Qgd nA -2.0 V A 125 135 Vgs=-4.5V, Id=-3.6A 135 155 Vds=-15V, Id=-2.2A Is=-1.5A, Vgs=0V 5 -0.75 Vgs=0V, Vds=-30V, f=1MHz Vgs=-4.5V, Vds=-30V Id=-2.2A td(on) Vgs=-10V, Vds=-30V tr RL=16.7Ω, Id=-1.8A td(off) Rgen=1Ω tf 5-2 μA ±100 Vgs=-10V, Id=-4.8A Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Gfs Vsd -60 Vds=-48V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit mΩ -1.30 S V -1.6 A 410 45 pF pF 20 pF 5.0 1.5 2.5 10.0 nC nC nC 5 15 10 25 ns ns 20 35 ns 10 20 ns AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM5K8473A-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Feb. 2012 www.alfa-mos.com Page 3 5-3 AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET Typical Characteristics ELM5K8473A-S ©Alfa-MOS Technology Corp. Rev.A Feb. 2012 www.alfa-mos.com Page 4 5-4 AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM5K8473A-S Typical ■Test Characteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Feb. 2012 www.alfa-mos.com Page 5 5-5