elm5k8473a

Single P-channel MOSFET
ELM5K8473A-S
■General description
■Features
ELM5K8473A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-60V
Id=-4.8A
Rds(on) = 135mΩ (Vgs=-10V)
Rds(on) = 155mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Gate-source voltage
Vdss
Vgs
-60
±20
V
V
Id
-4.8
-3.6
A
Idm
-10
A
Pd
2.8
1.2
W
Tj, Tstg
- 55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
SOT-223(TOP VIEW)
1
2
Unit
°C/W
3
D
Pin No.
1
2
Pin name
GATE
DRAIN
3
SOURCE
5-1
G
S
Single P-channel MOSFET
ELM5K8473A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-48V, Vgs=0V, Ta=85°C
-30
Vds=0V, Vgs=±12V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
-1.0
-5
Qg
Qgs
Qgd
nA
-2.0
V
A
125
135
Vgs=-4.5V, Id=-3.6A
135
155
Vds=-15V, Id=-2.2A
Is=-1.5A, Vgs=0V
5
-0.75
Vgs=0V, Vds=-30V, f=1MHz
Vgs=-4.5V, Vds=-30V
Id=-2.2A
td(on)
Vgs=-10V, Vds=-30V
tr
RL=16.7Ω, Id=-1.8A
td(off)
Rgen=1Ω
tf
5-2
μA
±100
Vgs=-10V, Id=-4.8A
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Gfs
Vsd
-60
Vds=-48V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
mΩ
-1.30
S
V
-1.6
A
410
45
pF
pF
20
pF
5.0
1.5
2.5
10.0
nC
nC
nC
5
15
10
25
ns
ns
20
35
ns
10
20
ns
AFP8473
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM5K8473A-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Feb. 2012
www.alfa-mos.com
Page 3
5-3
AFP8473
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
Typical Characteristics
ELM5K8473A-S
©Alfa-MOS Technology Corp.
Rev.A Feb. 2012
www.alfa-mos.com
Page 4
5-4
AFP8473
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM5K8473A-S
Typical
■Test Characteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Feb. 2012
www.alfa-mos.com
Page 5
5-5
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