elm2h401sa

Single P-channel MOSFET
ELM2H401SA-S
■General description
■Features
ELM2H401SA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. The package is SOT-723.
•
•
•
•
•
•
■Application
•
•
•
•
Notebook
Load Switch
Baterry Protection
Hand-held instruments
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
Pulsed drain current 1
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±8
-400
Id
Ta=100°C
V
mA
Idm
Pd
-250
-1.6
450
A
mW
Tj, Tstg
-55 to 150
°C
Tc=25°C
Junction and storage temperature range
Vds=-20V
Id=-0.4A
Rds(on) < 650mΩ (Vgs=-4.5V)
Rds(on) < 900mΩ (Vgs=-2.5V)
Rds(on) < 1400mΩ (Vgs=-1.8V)
Rds(on) < 2300mΩ (Vgs=-1.5V)
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Typ.
Max.
Unit
280
°C/W
Rθja
■Pin configuration
■Circuit
SOT-723(TOP VIEW)
3
1
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM2H401SA-S
■Electrical characteristics
Parameter
Symbol
Condition
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
Max. body-diode continuous current
BVdss Id=-250μA, Vgs=0V
Idss
-1
Vds=-16V, Vgs=0V, Ta=125°C
-10
μA
-0.7
±20
-1.0
Vgs=-4.5V, Id=-0.3A
Vgs=-2.5V, Id=-0.2A
Rds(on)
Vgs=-1.8V, Id=-0.1A
500
700
1100
650
900
1400
Vgs=-1.5V, Id=-0.1A
1700
2300
-0.4
A
-0.8
-1
A
V
40.0
15.0
6.5
78.0
30.0
13.0
pF
pF
pF
1.00
2.00
nC
0.28
0.18
0.50
0.40
nC
nC
8.0
5.2
30.0
16.0
10.0
60.0
ns
ns
ns
18.0
36.0
ns
Is
Ism
Vsd
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge 2, 3
Ciss
Coss
Crss
Gate-source charge
Gate-drain charge 2, 3
Turn-on delay time 2, 3
Qgs
Qgd
Turn-on rise time 2, 3
Turn-off delay time 2, 3
Turn-off fall time 2, 3
V
Vds=-20V, Vgs=0V, Ta=25°C
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
Pulsed source current
Diode forward voltage
DYNAMIC PARAMETERS
2, 3
-20
Qg
-0.3
Vgs=Vds=0
Is=-0.2A, Vgs=0V
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-0.2A
td(on)
tr
Vgs=-4.5V, Vds=-10V
td(off) Id=-0.2A, Rgen=10Ω
tf
NOTE :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%.
3. Essentially independent of operating temperature.
4-2
μA
V
mΩ
Single P-channel MOSFET
ELM2H401SA-S
PM2119EUX
Normalized On Resistance (m)
-ID , Continuous Drain Current (A)
■Typical
electrical
and thermal characteristics
20V P-Channel
MOSFETs
TJ , Junction Temperature (℃)
TC , Case Temperature (℃)
Fig.2
Continuous Drain Current vs. TC
Qg , Gate Charge (nC)
TJ , Junction Temperature ((℃)
Normalized Vth vs. TJ
Fig.4
Fig.5
Gate Charge Waveform
-ID , Continuous Drain Current (A)
Normalized Thermal Response (RΘJA)
Fig.3
Normalized RDSON vs. TJ
-VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
Fig.1
-V
VDS , Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Normalized Transient Response
Fig.6
Powemate Electronics Corp
Maximum Safe Operation Area
Ver.1.00
4-3
3
Single P-channel MOSFET
ELM2H401SA-S
PM2119EUX
20V P-Channel MOSFETs
-VDS
90%
10%
-VGS
Td(on)
Tr
Ton
Fig.7
Td(off)
Tf
Toff
Switching Time Waveform
Fig.8
Powemate Electronics Corp
Gate Charge Waveform
Ver.1.00
4
4-4
Similar pages