elm51401fa

Single P-channel MOSFET
ELM51401FA-S
■General description
■Features
ELM51401FA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V.
•
•
•
•
•
Vds=-20V
Id=-1.0A
Rds(on) = 600mΩ (Vgs=-4.5V)
Rds(on) = 800mΩ (Vgs=-2.5V)
Rds(on) = 1300mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
±12
-1.0
-0.6
V
Idm
-6
A
Pd
0.35
0.22
W
Tj, Tstg
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
A
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
SC-70(TOP VIEW)
3
1
2
Unit
°C/W
D
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
5-1
Single P-channel MOSFET
ELM51401FA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
-0.4
-0.7
-1
-5
μA
±100
nA
-1.0
V
A
Vgs=-4.5V, Id=-0.45A
500
600
Rds(on) Vgs=-2.5V, Id=-0.35A
Vgs=-1.8V, Id=-0.25A
Gfs Vds=-10V, Id=-0.4A
700
1000
1
800
1300
-0.65
-1.20
V
-1.0
A
100
pF
pF
Vsd
Is=-0.15A, Vgs=0V
Is
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-off delay time
Turn-off fall time
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
-20
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Vgs=0V, Vds=-10V, f=1MHz
70
20
S
10
Vgs=-4.5V, Vds=-10V
Id=-0.25A
Vgs=-4.5V, Vds=-10V
RL=30Ω, Id=-0.2A
Rgen=10Ω
5-2
1.0
mΩ
pF
1.3
nC
0.1
0.3
10
15
nC
nC
ns
10
40
15
60
ns
ns
30
50
ns
AFP1303
Alfa-MOS
20V P-Channel
Technology
Single P-channel MOSFET
Enhancement Mode MOSFET
ELM51401FA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 3
5-3
AFP1303
Alfa-MOS
20V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM51401FA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 4
5-4
AFP1303
Alfa-MOS
20V P-Channel
Single P-channel MOSFET
Technology
Enhancement Mode MOSFET
ELM51401FA-S
■Test circuit and waveform
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jan. 2011
www.alfa-mos.com
Page 5
5-5
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