Single P-channel MOSFET ELM51401FA-S ■General description ■Features ELM51401FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V. • • • • • Vds=-20V Id=-1.0A Rds(on) = 600mΩ (Vgs=-4.5V) Rds(on) = 800mΩ (Vgs=-2.5V) Rds(on) = 1300mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs ±12 -1.0 -0.6 V Idm -6 A Pd 0.35 0.22 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Ta=25°C. Unless otherwise noted. Limit Unit -20 V A ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit SC-70(TOP VIEW) 3 1 2 Unit °C/W D Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 5-1 Single P-channel MOSFET ELM51401FA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-20V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS -0.4 -0.7 -1 -5 μA ±100 nA -1.0 V A Vgs=-4.5V, Id=-0.45A 500 600 Rds(on) Vgs=-2.5V, Id=-0.35A Vgs=-1.8V, Id=-0.25A Gfs Vds=-10V, Id=-0.4A 700 1000 1 800 1300 -0.65 -1.20 V -1.0 A 100 pF pF Vsd Is=-0.15A, Vgs=0V Is Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-off delay time Turn-off fall time V Ta=85°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time -20 Qg Qgs Qgd td(on) tr td(off) tf Vgs=0V, Vds=-10V, f=1MHz 70 20 S 10 Vgs=-4.5V, Vds=-10V Id=-0.25A Vgs=-4.5V, Vds=-10V RL=30Ω, Id=-0.2A Rgen=10Ω 5-2 1.0 mΩ pF 1.3 nC 0.1 0.3 10 15 nC nC ns 10 40 15 60 ns ns 30 50 ns AFP1303 Alfa-MOS 20V P-Channel Technology Single P-channel MOSFET Enhancement Mode MOSFET ELM51401FA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 3 5-3 AFP1303 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM51401FA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 4 5-4 AFP1303 Alfa-MOS 20V P-Channel Single P-channel MOSFET Technology Enhancement Mode MOSFET ELM51401FA-S ■Test circuit and waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 5 5-5