Single P-channel MOSFET ELM32401LA-S ■General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -60 V Gate-source voltage Vgs ±20 -7 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A -6 -30 A 28 3 W 18 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 3 75 Unit °C/W °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 4-1 G S Single P-channel MOSFET ELM32401LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Condition BVdss Id=-250μA, Vgs=0V Idss Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -60 V Vds=-48V, Vgs=0V Vds=-44V, Vgs=0V, Ta=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage Vgs(th) Vds=Vgs, Id=-250μA -1 On state drain current Id(on) Vgs=-10V, Vds=-5V -32 Vgs=-10V, Id=-7A Static drain-source on-resistance Rds(on) Vgs=-4.5V, Id=-6A Forward transconductance Gfs Vds=-10V, Id=-7A Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Is Pulsed body-diode current Ism DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Coss Vgs=0V, Vds=-30V, f=1MHz Reverse transfer capacitance Crss SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-30V Gate-source charge Qgs Id=-7A Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time tr Vgs=-10V, Vds=-20V Turn-off delay time td(off) Id=-1A, Rgen=6Ω Turn-off fall time tf Body diode reverse recovery time trr If=-7A, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 -1 -10 -2 μA ±250 nA -3 V A 1 mΩ 1 -1 S V 1 1 -1.3 A -2.6 A 70 90 100 135 9 3 760 pF 90 40 pF pF 15.0 2.5 nC nC 2 2 3.0 7 14 nC ns 2 2 10 20 ns 2 19 34 ns 2 12 15.5 22 ns ns 2 7.9 nC NIKO-SEM P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor (Preliminary) Single P-channel MOSFET ELM32401LA-S ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) V GS = 0V 10 1 25° C -55° C 0.01 0.001 4 - 33 T A = 125° C 0.1 0 0.2 0.6 0.8 1.0 0.4 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 OCT-21-2004 NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement Mode FieldELM32401LA-S Effect Transistor (Preliminary) 4-4 P9006EDG TO-252 Lead-Free