elm32401la

Single P-channel MOSFET
ELM32401LA-S
■General description
■Features
ELM32401LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-60V
Id=-7A
Rds(on) < 90mΩ (Vgs=-10V)
Rds(on) < 135mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-60
V
Gate-source voltage
Vgs
±20
-7
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-6
-30
A
28
3
W
18
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
3
75
Unit
°C/W
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
4-1
G
S
Single P-channel MOSFET
ELM32401LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Idss
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-60
V
Vds=-48V, Vgs=0V
Vds=-44V, Vgs=0V, Ta=125°C
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-1
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-32
Vgs=-10V, Id=-7A
Static drain-source on-resistance
Rds(on)
Vgs=-4.5V, Id=-6A
Forward transconductance
Gfs Vds=-10V, Id=-7A
Diode forward voltage
Vsd Is=If, Vgs=0V
Max. body-diode continuous current
Is
Pulsed body-diode current
Ism
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=-30V, f=1MHz
Reverse transfer capacitance
Crss
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-10V, Vds=-30V
Gate-source charge
Qgs
Id=-7A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-10V, Vds=-20V
Turn-off delay time
td(off) Id=-1A, Rgen=6Ω
Turn-off fall time
tf
Body diode reverse recovery time
trr
If=-7A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
-1
-10
-2
μA
±250
nA
-3
V
A
1
mΩ
1
-1
S
V
1
1
-1.3
A
-2.6
A
70
90
100
135
9
3
760
pF
90
40
pF
pF
15.0
2.5
nC
nC
2
2
3.0
7
14
nC
ns
2
2
10
20
ns
2
19
34
ns
2
12
15.5
22
ns
ns
2
7.9
nC
NIKO-SEM
P-Channel Logic Level Enhancement
TO-252
Lead-Free
Mode Field Effect Transistor (Preliminary)
Single P-channel MOSFET
ELM32401LA-S
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
-Is - Reverse Drain Current(A)
V GS = 0V
10
1
25° C
-55° C
0.01
0.001
4 - 33
T A = 125° C
0.1
0
0.2
0.6
0.8
1.0
0.4
-VSD - Body Diode Forward Voltage(V)
1.2
1.4
OCT-21-2004
NIKO-SEM
Single P-channel MOSFET
P-Channel
Logic Level Enhancement
Mode FieldELM32401LA-S
Effect Transistor (Preliminary)
4-4
P9006EDG
TO-252
Lead-Free
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