elm32409la

Single P-channel MOSFET
ELM32409LA-S
■General description
■Features
ELM32409LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-40V
Id=-10A
Rds(on) < 44mΩ (Vgs=-10V)
Rds(on) < 68mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-40
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-10
-8
-32
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
30
3
W
20
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Steady-state
Steady-state
Rθjc
Rθja
■Pin configuration
Typ.
Max.
Unit
4.1
80.0
°C/W
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
2
1
Pin No.
1
Pin name
GATE
2
3
DRAIN
SOURCE
3
4-1
G
S
Single P-channel MOSFET
ELM32409LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Idss
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-40
V
Vds=-32V, Vgs=0V
Vds=-30V, Vgs=0V, Ta=125°C
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-1.0
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-32
Vgs=-10V, Id=-10A
Static drain-source on-resistance
Rds(on)
Vgs=-4.5V, Id=-8A
Forward transconductance
Gfs Vds=-10V, Id=-10A
Diode forward voltage
Vsd Is=If, Vgs=0V
Max. body-diode continuous current
Is
Pulsed body-diode current
Ism
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=-10V, f=1MHz
Reverse transfer capacitance
Crss
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-10V, Vds=-20V
Gate-source charge
Qgs
Id=-10A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-10V, Vds=-20V
Turn-off delay time
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
Turn-off fall time
tf
Body diode reverse recovery time
trr
If=-5A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
-1
-10
-1.8
μA
±250
nA
-3.0
V
A
1
mΩ
1
-1
S
V
1
1
-10
A
-30
A
38
44
57
68
11
3
660
pF
300
70
pF
pF
14.0
2.2
nC
nC
2
2
1.9
6.0
12.8
nC
ns
2
2
9.2
18.6
ns
2
19.2
34.8
ns
2
11.8
15.5
21.6
ns
ns
2
7.9
nC
NIKO-SEM
P-Channel
LevelMOSFET
Enhancement
Single Logic
P-channel
Mode Field Effect
Transistor ( Preliminary )
ELM32409LA-S
P4404EDG
TO-252(DPAK)
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
10
1
0.1
T A = 125° C
25° C
-55° C
0.01
0.001
0
0.4
0.8
1.0
1.2
0.2
0.6
-VSD - Body Diode Forward Voltage(V)
1.4
4-3
3
JAN-17-2005
NIKO-SEM
Single P-channel MOSFET
P-Channel Logic Level Enhancement
ELM32409LA-S
Mode Field
Effect Transistor ( Preliminary )
P4404EDG
TO-252(DPAK)
Lead-Free
4-4
4
JAN-17-2005
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