elm529575a

Single P-channel MOSFET
ELM529575A-S
■General description
■Features
ELM529575A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-60V
Id=-18A
Rds(on) = 68mΩ (Vgs=-10V)
Rds(on) = 78mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Vds
-60
V
Gate-source voltage
Vgs
±20
-18
-12
V
-50
-12
23
A
A
mJ
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Single pulse avalanche current
Avalanche energy
Id
Idm
Ias
Eas
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
40
15
-55 to 150
Pd
Junction and storage temperature range
A
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
62.5
Unit
°C/W
■Circuit
TO-252-3(TOP VIEW)
D
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
5-1
G
S
Single P-channel MOSFET
ELM529575A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-48V, Vgs=0V, Ta=85°C
-20
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
-1.0
-20
Qg
Qgs
Qgd
nA
-2.5
V
A
55
68
Vgs=-4.5V, Id=-12A
65
78
Vds=-15V, Id=-3.2A
Is=-3A, Vgs=0V
12
-0.8
Vgs=0V, Vds=-25V, f=1MHz
1200
140
Id=-10A
td(on)
Vgs=-10V, Vds=-30V
tr
RL=3Ω, Id=-18A
td(off)
Rgen=2.5Ω
tf
5-2
mΩ
-1.3
S
V
-10
A
2000
pF
pF
90
Vgs=-10V, Vds=-30V
μA
±100
Vgs=-10V, Id=-18A
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Gfs
Vsd
-60
Vds=-48V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
pF
25
5
8
40
nC
nC
nC
10
10
20
20
ns
ns
45
80
ns
25
40
ns
AFP9575S
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM529575A-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Aug. 2012
www.alfa-mos.com
Page 3
5-3
AFP9575S
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM529575A-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Aug. 2012
www.alfa-mos.com
Page 4
5-4
AFP9575S
Alfa-MOS
60V P-Channel
Enhancement Mode MOSFET
Single P-channel MOSFET
Technology
ELM529575A-S
■Test circuit and waveform
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Aug. 2012
www.alfa-mos.com
Page 5
5-5
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