elm7sh08xb

HIGH SPEED CMOS LOGIC IC
ELM7SH08xB 2-input AND gate
■General description
ELM7SH08xB is CMOS 2-input AND gate which is suitable for battery-operated devices because of its low
voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which
allows long time operation of devices. The internal circuit which provides high noise immunity and stable
output is composed of 4 stages, including buffered output.
■Features
•
•
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•
•
•
•
Same electrical characteristic and high speed operation as 74VHC series
Low consumption current
: Idd=1.0μA(Max.)(Top=25°C)
Wide power voltage range
: 2.0V to 5.5V
Wide input voltage range
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)
High speed
: Tpd=2ns(Typ.)(Vdd=5.0V)
Small package
: SOT-25, SC-70-5(SOT-353)
Same function and pin configuration as ELM7SxxB
■Application
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•
•
•
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Cell phones
Digital cameras
Portable electrical appliances like PDA, etc.
Computers and peripherals
Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
Modification inside print board, adjustment of timing, solution to noise
Power voltage change from 5V to 3V
■Selection guide
ELM7SH08xB-EL
Symbol
a
Function
b
Package
c
d
Product version
Taping direction
08: 2-input AND gate
M: SOT-25
T : SC-70-5(SOT-353)
B
EL: Refer to PKG file
ELM7SH 0 8 x B - EL
↑ ↑ ↑ ↑
a b c d
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5 to +6.0
-0.5 to +6.0
-0.5 to Vdd+0.5
-20
±20
±25
±50
150
-65 to +150
3- 1
Unit
V
V
V
mA
mA
mA
mA
mW
°C
HIGH SPEED CMOS LOGIC IC
ELM7SH08xB 2-input AND gate
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
Symbol
Vdd
Vin
Vout
Top
High-input down-time
tr, tf
Limit
2.0 to 5.5
0 to 5.5
0 to Vdd
-40 to +85
Vdd=3.3±0.3V
Vdd=5.0±0.5V
Unit
V
V
V
°C
0 to 200
0 to 100
ns
■Pin configuration
TOP VIEW
5
1
Pin No.
1
2
3
4
5
4
2
3
Pin name
INB
INA
GND
OUTX
VDD
INA
Low
Low
High
High
Input
INB
Low
High
Low
High
Output
OUTX
Low
Low
Low
High
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vdd
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
Min.
1.50
2.10
3.85
1.90
2.90
4.40
2.58
3.94
-0.1
Top=25°C
Top=-40 to +85°C
Unit
Condition
Typ.
Max.
Min.
Max.
1.50
2.10
V
3.85
0.50
0.50
0.90
0.90
V
1.65
1.65
2.00
1.90
3.00
2.90
Ioh=-50μA
4.50
4.40
V Vin=Vih
2.48
Ioh=-4mA
3.80
Ioh=-8mA
0.10
0.10
0.10
0.10
Vin=Vil Iol=50μA
0.10
0.10
V
or
0.36
0.44
Vih
Iol=4mA
0.36
0.44
Iol=8mA
0.1
-1.0
1.0
μA
Vin=Vdd or GND
1.0
10.0
μA
Vin=Vdd or GND
3- 2
HIGH SPEED CMOS LOGIC IC
ELM7SH08xB 2-input AND gate
■AC electrical characteristics
Parameter
Sym.
Propagation
delay-time
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
Input
capacity
Equivalent
inner
capacity
Cin
Vdd
CL
3.3±0.3
15
3.3±0.3
50
5.0±0.5
15
5.0±0.5
50
Min.
5.0
Cpd
Top=25°C
Typ.
3.7
3.2
5.2
4.5
2.8
2.4
3.7
3.4
Max.
8.8
8.8
12.3
12.3
5.9
5.9
7.9
7.9
4.0
10.0
tr=tf=3ns
Top=-40 to +85°C
Unit
Min.
Max.
1.0
10.5
1.0
10.5
1.0
14.0
1.0
14.0
ns
1.0
7.0
1.0
7.0
1.0
9.0
1.0
9.0
10.0
Condition
Refer to
test circuit
pF Vin=Vdd or GND
9.3
pF
f=1MHz
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test
circuit.Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd
■Test circuit
■Measured wave pattern
3ns
Vdd
Pulse
Oscillator
OUTPUT
INPUT
INPUT
10%
90%
50%
Vdd
10%
Voh
50%
50%
OUTPUT
Vol
* Output should be opened when measuring current consumption.
■Marking
SC-70-5
a
b
SOT-25
c
a
GND
tPHL
tPLH
CL
50�
90%
50%
3ns
b
Sym.
a
b
c
c
3- 3
Mark
F
2
A to Z
(except I, O, X)
Content
ELM7SH series
ELM7SH08xB
Lot No.
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