elm14614aa

Complementary MOSFET
ELM14614AA-N
■General Description
■Features
ELM14614AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Maximum Absolute Ratings
•
•
•
•
N-channel
P-channel
Vds=40V
Id=6A(Vgs=10V)
Rds(on) < 31mΩ(Vgs=10V)
Rds(on) < 45mΩ(Vgs=4.5V)
Vds=-40V
Id=-5A(Vgs=-10V)
Rds(on) < 45mΩ(Vgs=-10V)
Rds(on) < 63mΩ(Vgs=-4.5V)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Vds
Vgs
40
±20
-40
±20
6.0
-5.0
Id
5.0
-4.0
A
1
Pulsed drain current
Avalanche current
Idm
4.5
20
-3.8
-20
A
2
Iar
12
14
A
Single pulse avalanche energy L=0.3mH
Tc=25°C
Power dissipation
Tc=70°C
Eas
29
2.00
1.28
mJ
Pd
22
2.00
1.28
Tj,Tstg
1.05
-55 to 150
1.05
-55 to 150
Ta=25°C
Ta=70°C
Ta=85°C
Continuous drain current
Tc=85°C
Junction and storage temperature range
V
V
W
°C
■Thermal Characteristics
Parameter
Symbol
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Steady-state
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
1
8
2
7
3
6
4
5
Typ.
Max.
Unit
Note
N-ch
48.0
74.0
62.5
110.0
°C/W
°C/W
1
35.0
48.0
50.0
62.5
°C/W
°C/W
74.0
35.0
110.0
50.0
°C/W
°C/W
Rθjl
Rθja
Rθjl
■Pin configuration
SOP-8(TOP VIEW)
Device
P-ch
3
1
3
■Circuit
Pin No.
1
2
Pin name
SOURCE2
GATE2
3
4
5
SOURCE1
GATE1
DRAIN1
6
7
8
DRAIN1
DRAIN2
DRAIN2
7-1
• N-ch
• P-ch
D1
D2
G1
G2
S2
S1
Complementary MOSFET
ELM14614AA-N
■Electrical Characteristics (N-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=10mA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Static drain-source on-resistance
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Ism
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body-diode reverse recovery time
Body-diode reverse recovery charge
Vds=5V, Id=6A
Is=1A, Vgs=0V
Qg
Qg
Qgs
Qgd
1.5
20
2.3
3.0
23.2
31.0
36.0
32.6
48.0
45.0
nA
V
A
mΩ
20
A
404
500
pF
Vgs=0V, Vds=0V, f=1MHz
95
37
2.7
120
50
4.0
pF
pF
Ω
Vgs=10V, Vds=20V
8.3
4.2
10.0
5.1
nC
nC
1.3
2.3
2.0
3.0
nC
nC
4.2
3.3
15.6
5.5
4.5
21.0
ns
ns
ns
3.0
20.5
14.5
4.0
27.0
19.0
ns
ns
nC
Vgs=0V, Vds=20V, f=1MHz
Id=6A
If=6A, dIf/dt=100A/μs
If=6A, dIf/dt=100A/μs
22
0.77
μA
1.00
2.5
td(on)
tr
Vgs=10V, Vds=20V
td(off) RL=3.3Ω, Rgen=3Ω
tf
trr
Qrr
5
±100
S
V
A
Ciss
Coss
Crss
Rg
1
Ta=55°C
Vds=0V, Vgs=±20V
Vgs=10V
Rds(on) Id=6A
Ta=125°C
Vgs=4.5V, Id=5A
Gfs
Vsd
Is
V
Vds=32V
Vgs=0V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
40
2
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
AO4614
ELM14614AA-N
■Typical Electrical and Thermal Characteristics (N-ch)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
20
5V
25
Vds=5V
4.5V
15
4V
15
Id (A)
Id (A)
20
125°C
10
10
Vgs=3.5V
5
5
0
0
1
2
3
4
0
5
2
Vds (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
Vgs (Volts)
Figure 2: Transfer Characteristics
50
1.8
40
Normalized On-Resistance
Rds(on) (m�)
25°C
Vgs=4.5V
30
Vgs=10V
Vgs=10V
Id=6A
1.6
Vgs=4.5V
Id=5A
1.4
1.2
1
20
0
5
10
15
20
0.8
Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
80
Id=6A
70
1.0E+00
60
125°C
1.0E-01
50
Is (A)
Rds(on) (m�)
25
125°C
40
1.0E-02
25°C
1.0E-03
30
20
1.0E-04
25°C
10
2
4
6
8
1.0E-05
10
0.0
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
7-3
Complementary MOSFET
AO4614
ELM14614AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
Capacitance (pF)
8
Vgs (Volts)
800
Vds=20V
Id= 6A
6
4
2
600
Ciss
400
Coss
Crss
200
0
0
0
2
4
6
8
0
10
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
Rds(on)
limited
10�s
10.0
1ms
10ms
1s
1.0
10s
Tj(max.)=150°C
Ta=25°C
0.1s
1
10
Z� ja Normalized Transient
Thermal Resistance
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
Tj(max.)=150°C
Ta=25°C
0
0.001
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
40
10
DC
0.1
0.1
30
30
100�s
Power (W)
Id (Amps)
100.0
20
Vds (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
www.aosmd.com
Complementary MOSFET
ELM14614AA-N
■Electrical Characteristics (P-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-10mA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Static drain-source on-resistance
Vgs=-10V
Rds(on) Id=-5A
Ta=125°C
Vgs=-4.5V, Id=-2A
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Ism
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
Vds=-5V, Id=-4.8A
Is=-1A, Vgs=0V
-5
±100
-1.5
-20
-1.9
-3.0
34.7
45.0
52.0
50.6
65.0
63.0
12
-0.75 -1.00
-2.5
μA
nA
V
A
mΩ
mΩ
S
V
A
-20
A
657
870
pF
Vgs=0V, Vds=0V, f=1MHz
143
63
6.5
200
110
10.0
pF
pF
Ω
Vgs=-10V, Vds=-20V
13.6
6.8
17.0
8.5
nC
nC
1.8
3.9
2.5
5.0
nC
nC
7.5
6.7
26.0
10.0
9.0
34.0
ns
ns
ns
11.2
22.3
15.2
15.0
29.0
20.0
ns
ns
nC
Vgs=0V, Vds=-20V
f=1MHz
Id=-5A
td(on)
tr
Vgs=-10V, Vds=-20V
td(off) RL=4Ω, Rgen=3Ω
tf
trr
Qrr
-1
Ta=55°C
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Gfs
Vsd
Is
V
Vds=-32V
Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
-40
If=-5A, dIf/dt=100A/μs
If=-5A, dIf/dt=100A/μs
2
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
AO4614
ELM14614AA-N
■Typical
Electrical and Thermal Characteristics (P-ch)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
30
-5V
-6V
-Id (A)
20
Vds=-5V
-4.5V
20
-4V
15
15
-Id (A)
-10V
25
-3.5V
10
10
Vgs=-3V
5
1
2
3
4
0
5
1
-Vds (Volts)
Fig 1: On-Region Characteristics
2
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.8
55
Rds(on) (m�)
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
60
Vgs=-4.5V
50
45
40
Vgs=-10V
35
30
Vgs=-10V
Id=-5A
1.6
1.4
Vgs=-4.5V
Id=-4A
1.2
1
0.8
0
2
4
6
8
10
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
1.0E+01
140
1.0E+00
Id=-5A
120
125°C
100
125°C
1.0E-01
-Is (A)
Rds(on) (m�)
25°C
5
0
0
125°C
80
60
1.0E-02
1.0E-03
1.0E-04
40
25°C
20
2
3
4
25°C
1.0E-05
5
6
7
8
9
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
7-6
Complementary MOSFET
AO4614
ELM14614AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1000
Vds=-20V
Id=-5A
800
Capacitance (pF)
-Vgs (Volts)
8
6
4
2
600
400
0
5
10
0
40
Tj(max.)=150°C
Ta=25°C
10ms
20
10
10s
DC
0.1
1
10
100
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
30
30
Power (W)
-Id (Amps)
10�s
100�s
1ms
1s
0.1
20
40
Rds(on)
limited
1.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max.)=150°C, Ta=25°C
0.1s
Z� ja Normalized Transient
Thermal Resistance
Crss
0
15
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
Coss
200
0
100.0
Ciss
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
www.aosmd.com
7-7
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