elm34601aa

Complementary MOSFET
ELM34601AA-N
■General Description
■Features
ELM34601AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=30V
Id=7A
Rds(on) < 21mΩ(Vgs=10V)
Rds(on) < 32mΩ(Vgs=4.5V)
Vds=-30V
Id=-6A
Rds(on) < 35mΩ(Vgs=-10V)
Rds(on) < 60mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Vds
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
30
-30
V
Vgs
±20
7
6
±20
-6
-5
V
Idm
28
-24
A
Pd
2.0
1.3
2.0
1.3
W
Tj,Tstg
-55 to 150
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
A
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Device
N-ch
Maximum junction-to-ambient
Rθja
P-ch
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
62.5
Unit
°C/W
62.5
°C/W
Note
■Circuit
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
8
DRAIN2
DRAIN1
DRAIN1
7-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM34601AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=250μA, Vgs=0V
Vds=20V, Vgs=0V, Ta=55°C
10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
V
1
Idss
Max.body-diode continuous current
30
Vds=24V, Vgs=0V
Zero gate voltage drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
±100
nA
2.5
V
A
1
mΩ
1
1
S
V
1
1
Is
3
A
Ism
6
A
Gfs
Vsd
Vds=0V, Vgs=±20V
μA
0.8
28
1.5
Vgs=10V, Id=7A
14
21
Vgs=4.5V, Id=6A
21
32
Vds=10V, Id=5A
If=1A, Vgs=0V
8
3
Ciss
1700
pF
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
380
260
pF
pF
Qg
Qgs
40
28
nC
nC
2
2
12
20
nC
ns
2
2
10
ns
2
120
ns
2
35
15.5
ns
ns
2
7.9
nC
Vgs=10V, Vds=15V, Id=6A
Qgd
td(on)
tr
Vgs=10V, Vds=15V, Id=1A
td(off) Rgen=6Ω
Turn-off fall time
Body-diode reverse recovery time
tf
trr
Body-diode reverse recovery charge
Qrr
If=5A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7-2
N-Complementary
& P-Channel Enhancement
Mode
MOSFET
Field Effect Transistor
ELM34601AA-N
P2103NVG
SOP-8
Lead-Free
■Typical Electrical and Thermal Characteristics (N-ch)
7-3
4
MAY-21-2004
NIKO-SEM
MOSFET
N-Complementary
& P-Channel Enhancement
Mode
ELM34601AA-N
Field
Effect Transistor
P2103NVG
SOP-8
Lead-Free
7-4
5
MAY-21-2004
Complementary MOSFET
ELM34601AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
μA
±100
nA
-2.5
V
A
1
mΩ
1
-1
S
V
1
1
Is
-3
A
Ism
-6
A
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max.body-diode continuous current
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
-0.8
-24
-1.5
Vgs=-10V, Id=-6A
28
35
Vgs=-4.5V, Id=-5A
44
60
Vds=-10V, Id=-5A
If=-1A, Vgs=0V
7
3
Ciss
970
pF
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
370
180
pF
pF
Gate-source charge
Qg
Qgs
28
6
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
12
20
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
17
ns
2
160
ns
2
75
15.5
ns
ns
2
7.9
nC
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Vgs=-10V, Vds=-15V
Id=-5A
Vgs=-10V, Vds=-15V
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
Turn-off fall time
Body-diode reverse recovery time
tf
trr
Body-diode reverse recovery charge
Qrr
If=-5A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5
N-Complementary
& P-Channel Enhancement
Mode
MOSFET
Field Effect Transistor
ELM34601AA-N
P2103NVG
SOP-8
Lead-Free
■Typical Electrical and Thermal Characteristics (P-ch)
7-6
6
MAY-21-2004
NIKO-SEM
Complementary MOSFET
N- & P-Channel Enhancement Mode
ELM34601AA-N
Field
Effect Transistor
7-7
7
P2103NVG
SOP-8
Lead-Free
MAY-21-2004
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