Complementary MOSFET ELM34603AA-N ■General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V) Vds=-30V Id=-6A Rds(on) < 34mΩ(Vgs=-10V) Rds(on) < 56mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Vds Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note 30 -30 V Vgs ±20 7 6 ±20 -6 -5 V Idm 20 -20 A Pd 2.0 1.3 2.0 1.3 W Tj,Tstg -55 to 150 -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range A 3 ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34603AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Vds=20V, Vgs=0V, Ta=55°C 10 Gate-body leakage current Gate threshold voltage On state drain current Igss Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V 1 Idss Max.body-diode continuous current 30 Vds=24V, Vgs=0V Zero gate voltage drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note ±100 nA 2.5 V A 1 mΩ 1 1 S V 1 1 Is 1.3 A Ism 2.6 A Gfs Vsd Vds=0V, Vgs=±20V μA 1.0 20 1.5 Vgs=10V, Id=7A 20.5 27.5 Vgs=4.5V, Id=6A 30.0 40.0 Vds=5V, Id=7A If=1A, Vgs=0V 16 3 Ciss 680 pF Coss Vgs=0V, Vds=15V, f=1MHz Crss 105 75 pF pF Qg Qgs 14.0 1.9 nC nC 2 2 3.3 4.6 7.0 nC ns 2 2 4.0 6.0 ns 2 20.0 30.0 ns 2 5.0 8.0 ns 2 Vgs=10V, Vds=15V, Id=7A Qgd td(on) tr Vgs=10V, Vds=10V, Id=1A td(off) Rgen=3Ω tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free Complementary MOSFET ELM34603AA-N ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C Is - Reverse Drain Current(A) 10 7-3 -55°C 0.1 0.01 0.001 4 25°C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 JUL-25-2005 NIKO-SEM MOSFET N-Complementary & P-Channel Enhancement Mode Field Effect Transistor ELM34603AA-N P2803NVG SOP-8 Lead-Free 7-4 6 JUL-25-2005 Complementary MOSFET ELM34603AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V μA ±100 nA -2.5 V A 1 mΩ 1 -1 S V 1 1 Is -1.3 A Ism -2.6 A Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max.body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd -1.0 -20 -1.5 Vgs=-10V, Id=-6A 27.5 34.0 Vgs=-4.5V, Id=-5A 43.5 56.0 Vds=-5V, Id=-6A If=-1A, Vgs=0V 13 3 Ciss 920 pF Coss Vgs=0V, Vds=-15V, f=1MHz Crss 190 120 pF pF Gate-source charge Qg Qgs 18.5 2.7 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 4.5 7.7 11.5 nC ns 2 2 Turn-on rise time Turn-off delay time tr 5.7 8.5 ns 2 20.0 30.0 ns 2 9.5 14.0 ns 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Vgs=-10V, Vds=-15V Id=-6A Vgs=-10V, Vds=-10V td(off) Id=-1A, Rgen=3Ω tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 P2803NVG N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor ELM34603AA-N SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) -Is - Reverse Drain Current(A) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 1 0.1 7-6 25°C -55°C 0.01 0.001 0 7 T A = 125°C 0.2 0.6 0.4 0.8 1.0 1.2 -VSD - Body Diode Forward Voltage(V) 1.4 JUL-25-2005 NIKO-SEM MOSFET N-Complementary & P-Channel Enhancement Mode ELM34603AA-N Field Effect Transistor 7-7 8 P2803NVG SOP-8 Lead-Free JUL-25-2005