elm34604aa

Complementary MOSFET
ELM34604AA-N
■General Description
■Features
ELM34604AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=40V
Id=7A
Rds(on) < 28mΩ(Vgs=10V)
Rds(on) < 42mΩ(Vgs=4.5V)
Vds=-40V
Id=-5A
Rds(on) < 65mΩ(Vgs=-10V)
Rds(on) < 105mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Vds
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
40
-40
V
Vgs
±20
7
6
±20
-6
-5
V
Idm
20
-20
A
Pd
2.0
1.3
2.0
1.3
W
Tj,Tstg
-55 to 150
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
A
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Device
N-ch
Maximum junction-to-ambient
Rθja
P-ch
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
62.5
Unit
°C/W
62.5
°C/W
Note
■Circuit
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
8
DRAIN2
DRAIN1
DRAIN1
7-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM34604AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=250μA, Vgs=0V
Vds=30V, Vgs=0V, Ta=55°C
10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
1
Idss
Max.body-diode continuous current
40
Vds=32V, Vgs=0V
Zero gate voltage drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
±100
nA
2.5
V
A
1
mΩ
1
1
S
V
1
1
Is
1.3
A
Ism
2.6
A
Gfs
Vsd
Vds=0V, Vgs=±20V
μA
1.0
20
1.5
Vgs=10V, Id=7A
21
28
Vgs=4.5V, Id=6A
30
42
Vds=10V, Id=7A
If=Is, Vgs=0V
19
3
Ciss
790
pF
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
175
65
pF
pF
Qg
Qgs
16.0
2.5
nC
nC
2
2
2.1
2.2
4.4
nC
ns
2
2
7.5
15.0
ns
2
11.8
21.3
ns
2
3.7
7.4
ns
2
Vgs=10V, Vds=20V, Id=7A
Qgd
td(on)
tr
Vgs=10V, Vds=20V, Id=1A
td(off) Rgen=6Ω
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7-2
P2804NVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
SOP-8
Lead-Free
Complementary MOSFET
ELM34604AA-N
■Typical Electrical and Thermal Characteristics (N-ch)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
25° C
1
-55° C
0.1
0.01
0.001
7-3
4
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
AUG-19-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Complementary MOSFET
Field Effect Transistor
ELM34604AA-N
7-4
P2804NVG
SOP-8
Lead-Free
Complementary MOSFET
ELM34604AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-30V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
μA
±100
nA
-2.5
V
A
1
mΩ
1
-1
S
V
1
1
Is
-1.3
A
Ism
-2.6
A
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max.body-diode continuous current
-40
Vds=-32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
-1.0
-20
-1.5
Vgs=-10V, Id=-5A
50
65
Vgs=-4.5V, Id=-4A
80
105
Vds=-10V, Id=-5A
If=Is, Vgs=0V
11
3
Ciss
690
pF
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
310
75
pF
pF
Gate-source charge
Qg
Qgs
14.0
2.2
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
1.9
6.7
13.4
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
9.7
19.4
ns
2
19.8
35.6
ns
2
12.3
22.2
ns
2
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Vgs=-10V, Vds=-20V
Id=-5A
Vgs=-10V, Vds=-20V
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5
N- & P-Channel Enhancement Mode
Field Effect Transistor
Complementary
MOSFET
P2804NVG
ELM34604AA-N
SOP-8
Lead-Free
■Typical Electrical and Thermal Characteristics (P-ch)
-Is - Reverse Drain Current(A)
100
V GS = 0V
10
1
0.1
25° C -55° C
0.01
0.001
0
7-6
T A = 125° C
0.8
1.0
1.2
0.2
0.6
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
Complementary
MOSFET
ELM34604AA-N
7-7
P2804NVG
SOP-8
Lead-Free
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