elm544599a

Complementary MOSFET
ELM544599A-N
■General Description
■Features
ELM544599A-N uses advanced trench technology
to provide excellent Rds(on) and low gate charge.
• N-channel
Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V)
Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
• P-channel
Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V)
Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
40
±20
-40
±20
8.0
6.0
25
-7.2
-6.2
-25
Pd
2.8
1.8
2.8
1.8
W
Tj,Tstg
-55 to 150
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
V
V
A
A
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
Device
Rθja
Rθja
N-ch
P-ch
Steady-state
Steady-state
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
Unit
62.5
62.5
°C/W
°C/W
■Circuit
Pin No.
1
2
Pin name
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
DRAIN2
DRAIN1
8
DRAIN1
8-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM544599A-N
■Electrical Characteristics (N-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=250μA, Vgs=0V
Idss
Vds=32V, Vgs=0V
40
1
Ta=85°C
10
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=10V, Vds=5V
20
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
16
20
Gfs
Vsd
Vds=15V, Id=5.0A
Is=2A, Vgs=0V
25
0.85
Is
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Qg
Qgs
Qgd
Vgs=0V, Vds=20V, f=1MHz
Vgs=4.5V, Vds=20V,
Id=5A
td(on)
tr
Vgs=10V, Vds=20V, Id=5.0A
td(off) RL=4Ω, Rgen=1Ω
tf
8-2
μA
nA
V
A
Vgs=10V, Id=8.0A
Vgs=4.5V, Id=6.0A
Ciss
Turn-on rise time
Turn-off delay time
Turn-off fall time
±100
3.0
Rds(on)
Input capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
22
28
mΩ
1.20
S
V
1.5
A
850
pF
110
75
pF
pF
10.0
2.8
3.2
14.0
nC
nC
nC
6
10
20
12
20
36
ns
ns
ns
6
12
ns
AFP4599W
Alfa-MOS
40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544599A-N
Typical
Characteristics
N-Channel
■Typical
Electrical (and
Thermal) Characteristics (N-ch)
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
www.alfa-mos.com
Page 4
8-3
AFP4599W
Alfa-MOS
40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544599A-N
Typical Characteristics ( N-Channel )
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
www.alfa-mos.com
Page 5
8-4
Complementary MOSFET
ELM544599A-N
■Electrical Characteristics (P-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=-250μA, Vgs=0V
Idss
Vds=-32V, Vgs=0V
-40
-1
Ta=85°C
-20
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
-1.0
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-20
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Rds(on)
Gfs
Vsd
Ciss
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
±100
-3.0
Vgs=-10V, Id=-7.2A
Vgs=-4.5V, Id=-6.2A
34
50
Vds=-15V, Id=-5A
Is=-2A, Vgs=0V
20
-0.8
Qg
Qgs
Qgd
Vgs=0V, Vds=-20V, f=1MHz
Vgs=-4.5V, Vds=-20V
Id=-5A
td(on)
tr
Vgs=-4.5V, Vds=-20V
td(off) Id=-5A, RL=4Ω, Rgen=1Ω
tf
8-5
μA
nA
V
A
Is
Input capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
42
60
mΩ
-1.2
S
V
-1.7
A
pF
1100
145
115
pF
pF
13.0
4.5
6.5
20.0
nC
nC
nC
40
55
30
80
100
60
ns
ns
ns
12
20
ns
AFP4599W
Alfa-MOS
40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544599A-N
■Typical
Electrical and
Thermal )Characteristics (P-ch)
Typical
Characteristics
( P-Channel
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
www.alfa-mos.com
Page 6
8-6
AFP4599W
Alfa-MOS
40V N & P Pair
Enhancement Mode MOSFET
Complementary MOSFET
Technology
ELM544599A-N
Typical Characteristics ( P-Channel )
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
www.alfa-mos.com
Page 7
8-7
AFP4599W
Alfa-MOS
40V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544599A-N
Typical Characteristics
■Test circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
www.alfa-mos.com
Page 8
8-8
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