elm17600ga

Complementary MOSFET
ELM17600GA-S
■General Description
■Features
ELM17600GA-S uses advanced trench
technology to provide excellent Rds(on)
a n d l o w g a t e c h a rg e . I n t e r n a l E S D
protection is included.
•
•
•
•
•
N-channel
P-channel
Vds=20V
Id=0.9A(Vgs=4.5V)
Rds(on) < 300mΩ(Vgs=4.5V)
Rds(on) < 350mΩ(Vgs=2.5V)
Rds(on) < 450mΩ(Vgs=1.8V)
Vds=-20V
Id=-0.6A(Vgs=-4.5V)
Rds(on) < 550mΩ(Vgs=-4.5V)
Rds(on) < 700mΩ(Vgs=-2.5V)
Rds(on) < 950mΩ(Vgs=-1.8V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Vds
20
-20
V
Vgs
±8
±8
V
Id
0.90
0.70
-0.60
-0.48
A
1
Idm
5
-3
A
2
0.30
0.19
-55 to 150
0.30
0.19
-55 to 150
Pd
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Tj,Tstg
W
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Steady-state
t≤10s
Steady-state
Maximum junction-to-lead
Steady-state
Rθja
Rθja
Rθjl
Pin No.
Pin name
5
1
SOURCE1
2
3
4
GATE1
DRAIN2
SOURCE2
5
6
GATE2
DRAIN1
1
2
3
Unit
°C/W
°C/W
350
415
460
°C/W
°C/W
°C/W
3
P-ch
300
360
400
300
350
°C/W
3
1
1
■Circuit
SC-70-6(TOP VIEW)
4
Max.
415
460
Note
N-ch
Typ.
360
400
Rθjl
■Pin configuration
6
Device
• N-ch
• P-ch
D1
G2
G1
S1
7-1
D2
S2
Complementary MOSFET
ELM17600GA-S
■Electrical Characteristics (N-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±8V
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body-diode reverse recovery time
Body-diode reverse recovery charge
Rds(on)
Gfs
Vsd
V
1
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
5
25
0.75
0.90
181
300
Vgs=2.5V, Id=0.75A
253
237
330
350
Vgs=1.8V, Id=0.7A
Vds=5V, Id=0.8A
Is=0.5A, Vgs=0V
317
2.6
0.69
450
Vgs=4.5V, Id=0.9A
Static drain-source on-resistance
20
0.50
5
Ta=125°C
Is
Ciss
Coss
Crss
Rg
Qg
Qgs
101
Vgs=0V, Vds=10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=4.5V, Vds=10V, Id=0.8A
17
14
3
1.57
0.13
μA
μA
V
A
mΩ
1.00
S
V
0.4
A
120
pF
4
pF
pF
Ω
1.90
nC
nC
Qgd
td(on)
0.36
3.2
nC
ns
tr
Vgs=5V, Vds=10V, RL=12.5Ω
td(off) Rgen=6Ω
tf
4.0
15.5
2.4
ns
ns
ns
trr
Qrr
If=0.8A, dIf/dt=100A/μs
If=0.8A, dIf/dt=100A/μs
6.7
1.6
8.1
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
AO7600
ELM17600GA-S
■Typical Electrical and Thermal Characteristics (N-ch)
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4
8V
10V
Vds=5V
5V
8
3
6
3.5V
3V
4
25°C
125°C
Id (A)
Id (A)
4V
2
2.5V
1
Vgs=2V
2
0
0
0
1
2
3
4
5
0
0.5
480
1.8
440
Vgs=1.8V
Normalized On-Resistance
Rds(on) (m� )
1.5
400
360
320
Vgs=2.5V
280
240
Vgs=4.5V
200
2
2.5
3
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
160
Vgs=1.8V
1.6
Vgs=2.5V
Id=0.7A
Id=0.75A
1.4
Vgs=4.5V
1.2
Id=0.9A
1
0.8
0
1
2
3
4
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
500
460
1E+00
420
125°C
Id=0.9A
1E-01
380
340
Is (A)
Rds(on) (m� )
1
125°C
300
1E-02
25°C
1E-03
260
220
25°C
1E-04
180
1E-05
140
1
2
3
4
5
6
7
0.0
8
0.4
0.8
1.2
1.6
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
7-3
2.0
Complementary MOSFET
AO7600
ELM17600GA-S
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
Vds=10V
Id=0.9A
Capacitance (pF)
Vgs (Volts)
4
3
2
1
150
Ciss
100
Coss
50
0
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10.0
Tj(max.)=150°C, Ta=25°C
Rds(on)
limited
16
100�s
10ms
10s
1
10
100
8
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=415°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
Z� ja Normalized Transient
Thermal Resistance
Tj(max.)=150°C
Ta=25°C
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
4
DC
0.0
0.1
15
12
1ms
0.1s
1s
0.1
10
10�s
Power (W)
1.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
Id (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
100
1000
Complementary MOSFET
ELM17600GA-S
■Electrical Characteristics (P-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-20
-1
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Rds(on)
Gfs
Vsd
V
-5
±10
-0.6
-0.9
415
550
Vgs=-2.5V, Id=-0.5A
542
590
700
700
Vgs=-1.8V, Id=-0.4A
Vds=-5V, Id=-0.6A
Is=-0.5A, Vgs=0V
700
1.7
-0.86
950
Vgs=-4.5V
Id=-0.6A
-0.5
-3
Ta=125°C
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
Vgs=0V, Vds=-10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-0.6A
tr
Vgs=-4.5V, Vds=-10V
td(off) RL=16.7Ω, Rgen=3Ω
tf
trr
Qrr
If=-0.6A, dIf/dt=100A/μs
If=-0.6A, dIf/dt=100A/μs
μA
V
A
mΩ
-1.00
S
V
-0.4
A
114
17
14
12
140
pF
17
pF
pF
Ω
1.44
0.14
1.80
Is
Ciss
μA
nC
nC
0.35
6.5
nC
ns
6.5
18.2
5.5
ns
ns
ns
10
3
13
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
AO7600
ELM17600GA-S
■Typical Electrical and Thermal Characteristics (P-ch)
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
6
-6V
-10V
-4.5V
-4V
3
125°C
-3.5V
-Id (A)
-Id (A)
4
-3V
2
-2.5V
2
1
Vgs=-2.0V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
900
1.6
700
Normalized On-Resistance
Vgs=-1.8V
800
Vgs=-2.5V
600
500
Vgs=-4.5V
400
2
2.5
3
3.5
4
4.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
Rds(on) (m� )
25°C
Vds=-5V
300
Vgs=-1.8V
Id=-0.4A
1.4
Vgs=-2.5V
Id=-0.5A
1.2
Vgs=-4.5V
Id=-0.6A
1
0.8
0
1
2
3
4
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+00
900
Id=-0.6A
800
1.0E-01
-Is (A)
Rds(on) (m� )
125°C
1.0E-02
700
125°C
600
500
25°C
1.0E-03
1.0E-04
25°C
1.0E-05
400
1.0E-06
300
0
2
4
6
8
0.0
10
0.8
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.4
7-6
1.2
Complementary MOSFET
AO7600
ELM17600GA-S
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
Capacitance (pF)
4
-Vgs (Volts)
200
Vds=-10V
Id=-0.6A
3
2
1
0
0.0
0.5
1.0
1.5
Ciss
150
100
Coss
50
0
2.0
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
-Id (Amps)
1ms
10�s
100�s
1s
10s
20
10
10ms
0.01
15
Tj(max.)=150°C
Ta=25°C
12
0.1s
0.10
10
14
Tj(max.)=150°C, Ta=25°C
1.00
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
10.00
Crss
DC
8
6
4
2
0
0.001
0.00
0.1
1
10
100
-Vds (Volts)
Z� ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=415°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
Pd
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-7
100
1000