Complementary MOSFET ELM35601KA-S ■General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V) Vds=-40V Id=-5.5A Rds(on) < 48mΩ(Vgs=-10V) Rds(on) < 85mΩ(Vgs=-5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds 40 -40 V Vgs ±20 7.0 ±20 -5.5 V 6.0 50 3.0 -4.5 -50 3.0 2.1 -55 to 150 2.1 -55 to 150 Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Id Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Tj,Tstg A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-case Symbol Rθja Rθjc Device N-ch N-ch Maximum junction-to-ambient Maximum junction-to-case Rθja Rθjc P-ch P-ch ■Pin configuration 1 2 3 4 Max. 42 6 Unit °C/W °C/W 42 6 °C/W °C/W Note ■Circuit TO-252-4(TOP VIEW) TAB Typ. • N-ch Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 TAB SOURCE2 GATE2 DRAIN1/DRAIN2 7-1 • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM35601KA-S ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Vds=30V, Vgs=0V, Ta=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 40 1.2 50 V 2.0 1 10 μA ±100 nA 3.0 V A 1 mΩ 1 1.2 S V 1 1 Vgs=10V, Id=7A 24 28 Vgs=5V, Id=6A Vds=10V, Id=7A If=7A, Vgs=0V 38 19 49 Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=10V, f=1MHz 530 118 662 165 pF pF Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss 44 66 pF Qg Qgs Qgd Vgs=10V, Vds=20V, Id=7A 12.8 2.0 1.7 td(on) tr Vgs=10V, Vds=20V, Id=1A td(off) Rgen=6Ω 1.8 6.0 8.2 3.0 42 Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time tf trr Body diode reverse recovery charge Qrr If=8A, dIf/dt=100A/μs 30 NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 nC nC nC 2 2 2 3.5 12.0 15.1 ns ns ns 2 2 2 5.9 ns ns 2 nC NIKO-SEM P2804ND5G N- Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor ELM35601KA-S TO-252-5 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C Is - Reverse Drain Current(A) 10 4 -55°C 0.1 0.01 0.001 7-3 25°C 1 0 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage(V) 1.2 1.4 SEP-16-2005 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35601KA-S Field Effect Transistor 7-4 5 P2804ND5G TO-252-5 Lead-Free SEP-16-2005 Complementary MOSFET ELM35601KA-S ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-32V, Vgs=0V Vds=-30V, Vgs=0V, Ta=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Qrr -1.2 -50 V -1 -10 μA ±100 nA -3.0 V A 1 mΩ 1 -1.2 S V 1 1 690 310 863 430 pF pF 75 113 pF -2.0 Vgs=-10V, Id=-5.5A 37 48 Vgs=-5V, Id=-4.5A Vds=-10V, Id=-5.5A If=-5.5A, Vgs=0V 56 11 85 Vgs=0V, Vds=-10V, f=1MHz Vgs=-10V, Vds=-20V Id=-5.5A td(on) tr Vgs=-10V, Vds=-20V td(off) Id=-1A, Rgen=6Ω tf trr -40 If=-7A, dIf/dt=100A/μs 14.0 2.2 1.9 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 2 2 2 6.7 9.7 19.8 13.4 19.4 35.6 ns ns ns 2 2 2 12.3 55 22.2 ns ns 2 52 NOTE : nC nC nC nC NIKO-SEM P2804ND5G N- &Complementary P-Channel Enhancement Mode MOSFET FieldELM35601KA-S Effect Transistor TO-252-5 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 T A = 125° C 25° C -55° C 0.01 0.001 0 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 7-6 6 SEP-16-2005 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35601KA-S Field Effect Transistor 7-7 7 P2804ND5G TO-252-5 Lead-Free SEP-16-2005