elm35601ka

Complementary MOSFET
ELM35601KA-S
■General Description
■Features
ELM35601KA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=40V
Id=7A
Rds(on) < 28mΩ(Vgs=10V)
Rds(on) < 49mΩ(Vgs=5V)
Vds=-40V
Id=-5.5A
Rds(on) < 48mΩ(Vgs=-10V)
Rds(on) < 85mΩ(Vgs=-5V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
40
-40
V
Vgs
±20
7.0
±20
-5.5
V
6.0
50
3.0
-4.5
-50
3.0
2.1
-55 to 150
2.1
-55 to 150
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Id
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Tj,Tstg
A
A
3
W
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-case
Symbol
Rθja
Rθjc
Device
N-ch
N-ch
Maximum junction-to-ambient
Maximum junction-to-case
Rθja
Rθjc
P-ch
P-ch
■Pin configuration
1 2
3 4
Max.
42
6
Unit
°C/W
°C/W
42
6
°C/W
°C/W
Note
■Circuit
TO-252-4(TOP VIEW)
TAB
Typ.
• N-ch
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
TAB
SOURCE2
GATE2
DRAIN1/DRAIN2
7-1
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM35601KA-S
■Electrical Characteristics (N-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=32V, Vgs=0V
Vds=30V, Vgs=0V, Ta=55°C
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
40
1.2
50
V
2.0
1
10
μA
±100
nA
3.0
V
A
1
mΩ
1
1.2
S
V
1
1
Vgs=10V, Id=7A
24
28
Vgs=5V, Id=6A
Vds=10V, Id=7A
If=7A, Vgs=0V
38
19
49
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
Gfs
Vsd
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=10V, f=1MHz
530
118
662
165
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
44
66
pF
Qg
Qgs
Qgd
Vgs=10V, Vds=20V, Id=7A
12.8
2.0
1.7
td(on)
tr
Vgs=10V, Vds=20V, Id=1A
td(off) Rgen=6Ω
1.8
6.0
8.2
3.0
42
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
tf
trr
Body diode reverse recovery charge
Qrr
If=8A, dIf/dt=100A/μs
30
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7-2
nC
nC
nC
2
2
2
3.5
12.0
15.1
ns
ns
ns
2
2
2
5.9
ns
ns
2
nC
NIKO-SEM
P2804ND5G
N- Complementary
& P-Channel Enhancement
Mode
MOSFET
Field
Effect Transistor
ELM35601KA-S
TO-252-5
Lead-Free
■Typical Electrical and Thermal Characteristics (N-ch)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125°C
Is - Reverse Drain Current(A)
10
4
-55°C
0.1
0.01
0.001
7-3
25°C
1
0
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage(V)
1.2
1.4
SEP-16-2005
NIKO-SEM
Complementary MOSFET
N- & P-Channel
Enhancement Mode
ELM35601KA-S
Field Effect Transistor
7-4
5
P2804ND5G
TO-252-5
Lead-Free
SEP-16-2005
Complementary MOSFET
ELM35601KA-S
■Electrical Characteristics (P-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-32V, Vgs=0V
Vds=-30V, Vgs=0V, Ta=55°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
Gfs
Vsd
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Qrr
-1.2
-50
V
-1
-10
μA
±100
nA
-3.0
V
A
1
mΩ
1
-1.2
S
V
1
1
690
310
863
430
pF
pF
75
113
pF
-2.0
Vgs=-10V, Id=-5.5A
37
48
Vgs=-5V, Id=-4.5A
Vds=-10V, Id=-5.5A
If=-5.5A, Vgs=0V
56
11
85
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-10V, Vds=-20V
Id=-5.5A
td(on)
tr
Vgs=-10V, Vds=-20V
td(off) Id=-1A, Rgen=6Ω
tf
trr
-40
If=-7A, dIf/dt=100A/μs
14.0
2.2
1.9
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5
2
2
2
6.7
9.7
19.8
13.4
19.4
35.6
ns
ns
ns
2
2
2
12.3
55
22.2
ns
ns
2
52
NOTE :
nC
nC
nC
nC
NIKO-SEM
P2804ND5G
N- &Complementary
P-Channel Enhancement
Mode
MOSFET
FieldELM35601KA-S
Effect Transistor
TO-252-5
Lead-Free
■Typical Electrical and Thermal Characteristics (P-ch)
-Is - Reverse Drain Current(A)
100
V GS = 0V
10
1
0.1
T A = 125° C
25° C -55° C
0.01
0.001
0
0.8
1.0
1.2
0.2
0.6
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
7-6
6
SEP-16-2005
NIKO-SEM
Complementary MOSFET
N- & P-Channel Enhancement Mode
ELM35601KA-S
Field
Effect Transistor
7-7
7
P2804ND5G
TO-252-5
Lead-Free
SEP-16-2005
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