elm35603ka

Complementary MOSFET
ELM35603KA-S
■General Description
■Features
ELM35603KA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
N-channel
•
•
•
•
Vds=40V
Vds=-40V
Id=10A
Id=-7A
Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
Rds(on) < 33mΩ(Vgs=7V)
Rds(on) < 40mΩ(Vgs=-7V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Id
Idm
Tc=25°C
Tc=70°C
Power dissipation
P-channel
Junction and storage temperature range
Pd
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
40
±20
10.0
-40
±20
-7.0
V
V
8.5
50
-6.0
-50
3.0
2.1
-55 to 150
3.0
2.1
-55 to 150
A
A
3
W
°C
■Thermal Characteristics
Parameter
Symbol
Device
Maximum junction-to-ambient
Rθja
Maximum junction-to-case
Maximum junction-to-ambient
Maximum junction-to-case
Max.
Unit
N-ch
42
°C/W
Rθjc
Rθja
N-ch
P-ch
6
42
°C/W
°C/W
Rθjc
P-ch
6
°C/W
■Pin configuration
1 2
3 4
Note
■Circuit
TO-252-4(TOP VIEW)
TAB
Typ.
• N-ch
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
TAB
SOURCE2
GATE2
DRAIN1/DRAIN2
7-1
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM35603KA-S
■Electrical Characteristics (N-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=32V, Vgs=0V
Vds=30V, Vgs=0V, Ta=55°C
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
40
1.2
50
V
1
10
μA
±100
nA
3.0
V
A
1
mΩ
1
1.2
S
V
1
1
1145
253
1450
355
pF
pF
142
pF
2.0
Vgs=10V, Id=10A
19
22
Vgs=7V, Id=7A
Vds=10V, Id=10A
If=10A, Vgs=0V
25
25
33
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
Gfs
Vsd
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
94
Qg
Qgs
Qgd
23.0
3.6
3.0
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Vgs=0V, Vds=10V, f=1MHz
Vgs=10V, Vds=20V, Id=10A
td(on)
tr
Vgs=10V, Vds=20V, Id=1A
td(off) Rgen=6Ω
Body diode reverse recovery time
tf
trr
Body diode reverse recovery charge
Qrr
If=10A, dIf/dt=100A/μs
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7-2
2
2
2
3.2
10.8
17.1
6.4
21.7
30.8
ns
ns
ns
2
2
2
5.3
60
10.7
ns
ns
2
43
NOTE :
nC
nC
nC
nC
NIKO-SEM
P2204ND5G
N- &
P-Channel Enhancement
Mode
Complementary
MOSFET
Field Effect Transistor
ELM35603KA-S
TO-252-5
Lead-Free
■Typical Electrical and Thermal Characteristics (N-ch)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
T A = 125°C
Is - Reverse Drain Current(A)
10
25°C
1
-55°C
0.1
0.01
0.001
4
7-3
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
May-03-2006
NIKO-SEM
Complementary MOSFET
N- & P-Channel
Enhancement Mode
ELM35603KA-S
Field Effect Transistor
7-4
5
P2204ND5G
TO-252-5
Lead-Free
May-03-2006
Complementary MOSFET
ELM35603KA-S
■Electrical Characteristics (P-ch)
Parameter
Symbol
Conditions
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-32V, Vgs=0V
Vds=-30V, Vgs=0V, Ta=55°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
Gfs
Vsd
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Qrr
V
-1
-10
-1.2
-50
-2.0
±100
-3.0
mΩ
1
-1.2
S
V
1
1
1000
450
1260
625
pF
pF
108
163
pF
33
Vgs=-7V, Id=-5A
Vds=-10V, Id=-7A
If=-7A, Vgs=0V
32
18
40
Vgs=-10V, Vds=-20V
Id=-7A
If=-7A, dIf/dt=100A/μs
20.0
3.2
2.7
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5
nC
nC
nC
2
2
2
9.7
14.0
28.7
19.4
28.1
51.6
ns
ns
ns
2
2
2
17.8
80
32.2
ns
ns
2
75
NOTE :
nA
1
28
Vgs=0V, Vds=-10V, f=1MHz
μA
V
A
Vgs=-10V, Id=-7A
td(on)
tr
Vgs=-10V, Vds=-20V
td(off) Id=-1A, Rgen=6Ω
tf
trr
-40
nC
NIKO-SEM
P2204ND5G
N- Complementary
& P-Channel Enhancement
Mode
MOSFET
Field Effect Transistor
ELM35603KA-S
TO-252-5
Lead-Free
■Typical Electrical and Thermal Characteristics (P-ch)
-Is - Reverse Drain Current(A)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
10
1
0.1
7-6
25°C -55°C
0.01
0.001
0
6
TA = 125°C
0.8 1.0
1.2
0.2 0.4 0.6
-VSD- Body Diode Forward Voltage(V)
1.4
May-03-2006
NIKO-SEM
Complementary MOSFET
N- & P-Channel Enhancement Mode
ELM35603KA-S
Field Effect Transistor
7
7-7
P2204ND5G
TO-252-5
Lead-Free
May-03-2006
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