Complementary MOSFET ELM35604KA-S ■General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V) Vds=-30V Id=-7A Rds(on) < 35mΩ(Vgs=-10V) Rds(on) < 60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds 30 -30 V Vgs ±20 8.5 ±20 -7.0 V 7.0 50 3.0 -5.8 -50 3.0 2.1 -55 to 150 2.1 -55 to 150 Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Id Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Tj,Tstg A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-case Symbol Rθja Rθjc Device N-ch N-ch Maximum junction-to-ambient Maximum junction-to-case Rθja Rθjc P-ch P-ch ■Pin configuration 1 2 3 4 Max. 42 6 Unit °C/W °C/W 42 6 °C/W °C/W Note ■Circuit TO-252-4(TOP VIEW) TAB Typ. • N-ch Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 TAB SOURCE2 GATE2 DRAIN1/DRAIN2 7-1 • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM35604KA-S ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Ta=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 30 0.8 50 V 1.5 1 10 μA ±100 nA 2.5 V A 1 mΩ 1 S V 1 1 Vgs=10V, Id=8A 17.5 21.0 Vgs=4.5V, Id=6A Vds=10V, Id=8A If=3A, Vgs=0V 24.0 13 32.0 1.2 1200 180 pF pF Crss 160 pF Qg Qgs Qgd Vgs=10V, Vds=15V, Id=8A 16 6 8 nC nC nC 2 2 2 td(on) tr Vgs=10V, Vds=15V, Id=1A td(off) Rgen=3.3Ω 20 10 30 ns ns ns 2 2 2 65 42 ns ns 2 30 nC Body diode reverse recovery time tf trr Body diode reverse recovery charge Qrr Vgs=0V, Vds=10V, f=1MHz If=8A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 NIKO-SEM P2103ND5G N-Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor_Preliminary ELM35604KA-S TO-252-5 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C Is - Reverse Drain Current(A) 10 25°C 1 -55°C 0.1 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 7-3 4 Mar-01-2005 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35604KA-S Field Effect Transistor_Preliminary 7-4 5 P2103ND5G TO-252-5 Lead-Free Mar-01-2005 Complementary MOSFET ELM35604KA-S ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Ta=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Qrr -0.8 -50 V -1.5 -1 -10 μA ±100 nA -2.5 V A 1 mΩ 1 S V 1 1 Vgs=-10V, Id=-7A 28 35 Vgs=-4.5V, Id=-5A Vds=-10V, Id=-7A If=-3A, Vgs=0V 46 10 60 Vgs=0V, Vds=-10V, f=1MHz Vgs=-10V, Vds=-15V Id=-7A td(on) tr Vgs=-10V, Vds=-15V td(off) Id=-1A, Rgen=3.3Ω tf trr -30 If=-7A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 -1.2 970 270 pF pF 180 pF 13 4 6 nC nC nC 2 2 2 22 12 32 ns ns ns 2 2 2 75 55 ns ns 2 52 nC NIKO-SEM P2103ND5G N- Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor_Preliminary TO-252-5 Lead-Free ELM35604KA-S ■Typical Electrical and Thermal Characteristics (P-ch) -Is - Reverse Drain Current(A) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 1 0.1 T A = 125°C 25°C -55°C 0.01 0.001 0 0.2 0.6 0.8 1.0 1.2 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 7-6 6 Mar-01-2005 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35604KA-S Field Effect Transistor_Preliminary 7-7 7 P2103ND5G TO-252-5 Lead-Free Mar-01-2005