elm18810ba

Dual N-channel MOSFET (common drain)
ELM18810BA-S
■General description
■Features
ELM18810BA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
•
•
•
•
•
•
Vds=20V
Id=7A (Vgs=4.5V)
Rds(on) < 20mΩ (Vgs=4.5V)
Rds(on) < 24mΩ (Vgs=2.5V)
Rds(on) < 32mΩ (Vgs=1.8V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
20
±8
7.0
5.7
30
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
V
V
1.5
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
64
Max.
83
Unit
°C/W
89
53
120
70
°C/W
°C/W
Note
1
3
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
DRAIN1/DRAIN2
SOURCE1
SOURCE1
4
5
GATE1
GATE2
6
SOURCE2
7
8
SOURCE2
DRAIN1/DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET (common drain)
ELM18810BA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
20
V
1
Vds=16V, Vgs=0V
Vds=0V, Vgs=±4.5V
5
±1
Gate threshold voltage
Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=250μA
0.4
±10
1.0
On state drain current
Id(on) Vgs=4.5V, Vds=5V
30
Rds(on)
0.6
μA
μA
μA
V
A
16.5
23.0
20.0
28.0
Vgs=2.5V, Id=5.5A
Vgs=1.8V, Id=5A
Vds=5V, Id=7A
20.0
24.0
29
24.0
32.0
Is=1A, Vgs=0V
0.76
1.00
2.5
pF
pF
pF
Vgs=4.5V, Id=7A
Static drain-source on-resistance
Ta=55°C
Ta=125°C
mΩ
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Vgs=0V, Vds=10V, f=1MHz
1160
187
146
Rg
Vgs=0V, Vds=0V, f=1MHz
1.5
Ω
16.0
nC
0.8
3.8
nC
nC
6.2
12.7
51.7
ns
ns
ns
16.0
17.7
6.7
ns
ns
nC
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Qg
Qgs
Qgd
Vgs=4.5V, Vds=10V, Id=7A
td(on)
tr
Vgs=5V, Vds=10V
td(off) RL=1.35Ω, Rgen=3Ω
tf
trr
Qrr
If=7A, dIf/dt=100A/μs
If=7A, dIf/dt=100A/μs
S
V
A
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET (common drain)
ELM18810BA-S
■Typical electrical and thermal characteristics
30
20
8V
Vgs=5V
Vgs =2V
15
20
Id(A)
Id(A)
Vgs =1.5V
10
10
Vgs =1V
25°C
0
0
1
2
3
125°C
5
4
0
5
0.0
Vds(Volts)
50
1.5
2.0
2.5
1.6
Normalize ON-Resistance
Rds(on)(m� )
1.0
Vgs(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
40
Vgs =1.8V
30
Vgs =2.5V
20
Vgs =4.5V
10
0
5
10
15
Id=6.5A
1.4
Vgs=1.8V
Vgs=2.5V
Vgs=4.5V
1.2
1.0
0.8
20
0
Id(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+01
Id=6.5A
1E+00
50
125°C
1E-01
40
Is(A)
Rds(on)(m� )
0.5
125°C
30
1E-02
1E-03
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
0.0
8
0.2
0.4
0.6
0.8
Vsd(Volts)
Figure 6: Body-Diode Characteristics
Vgs(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Dual N-channel MOSFET (common drain)
ELM18810BA-S
2000
5
Vds=10V
Id=7A
1600
Capacitance (pF)
Vgs(Volts)
4
Ciss
1200
3
2
800
Crss
400
1
0
0
0
5
10
15
0
20
100.0
100�s
10�s
1ms
0.1s
10ms
20
20
10
1s
10s
DC
0.1
0.1
15
Tj(max)=150°C
Ta=25°C
30
Power (W)
Rds(on)
limited
1.0
10
40
Tj(max)=150°C
Ta=25°C
10.0
5
Vds(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
Id (Amps)
Coss
1
Vds (Volts)
10
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
10
1
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd
0.1
0.01
0.00001
Ton
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
Similar pages