elm18814ba

Dual N-channel MOSFET (common drain)
ELM18814BA-S
■General description
■Features
ELM18814BA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
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•
•
•
•
•
•
Vds=20V
Id=7.5A (Vgs=10V)
Rds(on) < 16mΩ (Vgs=10V)
Rds(on) < 18mΩ (Vgs=4.5V)
Rds(on) < 24mΩ (Vgs=2.5V)
Rds(on) < 34mΩ (Vgs=1.8V)
ESD Rating : 2500V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
20
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
7.5
6.0
30
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
1.50
0.96
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
64
89
Max.
83
120
Unit
°C/W
°C/W
Note
53
70
°C/W
3
1
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
DRAIN1/DRAIN2
SOURCE1
3
4
5
SOURCE1
GATE1
GATE2
6
7
8
SOURCE2
SOURCE2
DRAIN1/DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET (common drain)
ELM18814BA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Gate-source breakdown voltage
Gate threshold voltage
On state drain current
Igss
BVgso
Vgs(th)
Id(on)
20
Vds=16V, Vgs=0V
Static drain-source on-resistance
1
5
10
Ta=55°C
Vds=0V, Vgs=±10V
Vds=0V, Ig=±250μA
Vds=Vgs, Id=250μA
Vgs=4.5V, Vds=5V
Vgs=10V, Id=7.5A
V
Ta=125°C
Rds(on) Vgs=4.5V, Id=7A
Vgs=2.5V, Id=6A
Vgs=1.8V, Id=5A
Forward transconductance
Gfs Vds=5V, Id=7.5A
Diode forward voltage
Vsd Is=1A, Vgs=0V
Max. body-diode continuous current
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Qg
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=7.5A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Vgs=5V, Vds=10V
Turn-on rise time
tr
Turn-off delay time
td(off) RL=1.3Ω, Rgen=3Ω
tf
Turn-off fall time
Body diode reverse recovery time
trr
If=7.5A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr If=7.5A, dIf/dt=100A/μs
±12
0.50
30
0.71
1.00
13
18
15
19
26
30
0.74
16
22
18
24
34
1.00
2.5
μA
μA
V
V
A
mΩ
S
V
A
1390
190
150
1.5
pF
pF
pF
Ω
15.4
1.4
4.0
6.2
11.0
40.5
10.0
15.0
5.1
nC
nC
nC
ns
ns
ns
ns
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET (common drain)
ELM18814BA-S
■Typical electrical and thermal characteristics
30
10V
20
Vds=5V
3V
4V
Vgs =2V
15
Id(A)
Id(A)
20
10
10
Vgs =1.5V
25°C
0
0
1
2
3
4
125°C
5
0
5
0.0
Vds(Volts)
50
Normalize ON-Resistance
1.6
40
Rds(on)(m� )
1.0
Vgs =1.8V
30
Vgs =2.5V
20
Vgs =4.5V
10
Vgs =10V
0
0
5
10
15
1.5
2.0
2.5
Vgs(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
Vgs=2.5V
Id=6A
Vgs=4.5V
1.4
Id=7A
Vgs=1.8V
Id=5A
1.2
Vgs=10V
Id=7.5A
1.0
0.8
20
0
Id(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+01
Id=7.5A
1E+00
50
125°C
1E-01
40
Is(A)
Rds(on)(m� )
0.5
125°C
30
1E-02
1E-03
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
0.0
8
0.2
0.4
0.6
0.8
Vsd(Volts)
Figure 6: Body-Diode Characteristics
Vgs(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Dual N-channel MOSFET (common drain)
ELM18814BA-S
2000
5
Vds=10V
Id=7.5A
Ciss
1600
Capacitance (pF)
Vgs(Volts)
4
1200
3
2
800
1
400
0
0
0
5
10
15
Crss
0
20
100�s
10�s
1ms
0.1s
10ms
20
20
10
1s
10s
DC
0.1
0.1
15
Tj(max)=150°C
Ta=25°C
30
Power (W)
Id (Amps)
Rds(on)
limited
1.0
10
40
Tj(max)=150°C
Ta=25°C
10.0
5
Vds(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
Coss
1
10
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
10
1
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd
0.1
0.01
0.00001
Ton
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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