elm58822sa

Dual N-channel MOSFET (common drain)
ELM58822SA-S
■General description
■Features
ELM58822SA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=20V
Id=6.5A
Rds(on) = 32mΩ (Vgs=4.5V)
Rds(on) = 35mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Vds
20
V
Gate-source voltage
Vgs
±12
6.5
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
A
4.8
20
2.8
A
W
1.8
-55 to 150
Tj, Tstg
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Typ.
■Pin configuration
Max.
62.5
Unit
°C/W
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
DRAIN1/DRAIN2
2
3
4
SOURCE1
SOURCE1
GATE1
5
6
7
GATE2
SOURCE2
SOURCE2
8
DRAIN1/DRAIN2
5-1
D1
D2
G2
G1
S1
S2
Dual N-channel MOSFET (common drain)
ELM58822SA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=16V, Vgs=0V, Ta=85°C
30
Vds=0V, Vgs=±8V
Static drain-source on-resistance
Rds(on)
Max.body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
0.5
10
μA
±100
nA
1.0
V
A
Vgs=4.5V, Id=6.5A
28
32
Vgs=2.5V, Id=4.8A
32
35
Vds=5V, Id=7A
Is=1.7A, Vgs=0V
25
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Gfs
Vsd
20
Vds=16V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
mΩ
1.3
S
V
1.5
A
700
75
pF
pF
Crss
45
pF
Qg
Qgs
Qgd
650
200
180
nC
nC
nC
Vgs=0V, Vds=20V, f=1MHz
Vgs=4.5V, Vds=10V, Id=7A
td(on)
Vgs=4.5V, Vds=10V
tr
RL=1.4Ω, Id=1A
td(off)
Rgen=3Ω
tf
5-2
8
12
12
20
ns
ns
32
40
ns
10
15
ns
AFN8822S
Alfa-MOS
20V Common-Drain N-Channel
Technology
(common drain)Mode MOSFET
Dual N-channel MOSFET Enhancement
ELM58822SA-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 3
5-3
AFN8822S
Alfa-MOS
20V Common-Drain N-Channel
Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET (common drain)
ELM58822SA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 4
5-4
AFN8822S
Alfa-MOS
20V Common-Drain N-Channel
Technology
(common drain)Mode MOSFET
Dual N-channel MOSFET Enhancement
ELM58822SA-S
Typical
■TestCharacteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 5
5-5
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