elm14806aa

Dual N-channel MOSFET
ELM14806AA-N
■General description
■Features
ELM14806AA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
•
•
•
•
•
•
•
Vds=20V
Id=9.4A (Vgs=10V)
Rds(on) < 14mΩ (Vgs=10V)
Rds(on) < 15mΩ (Vgs=4.5V)
Rds(on) < 21mΩ (Vgs=2.5V)
Rds(on) < 30mΩ (Vgs=1.8V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
20
±12
9.4
7.5
40
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
V
V
2.00
1.28
-55 to 150
A
1
A
2
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
45.0
Max.
62.5
Unit
°C/W
72.0
34.0
110.0
40.0
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE2
GATE2
SOURCE1
4
5
GATE1
DRAIN1
6
DRAIN1
7
8
DRAIN2
DRAIN2
4-1
D1
D2
G2
G1
S1
S2
Dual N-channel MOSFET
ELM14806AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-source leakage current
Gate-source breakdown voltage
Gate threshold voltage
On state drain current
Igss
BVgso
Vgs(th)
Id(on)
20
Vds=16V, Vgs=0V
Static drain-source on-resistance
10
25
±10
Ta=55°C
Vds=0V, Vgs=±10V
Vds=0V, Ig=±250μA
Vds=Vgs, Id=250μA
Vgs=4.5V, Vds=5V
Vgs=10V, Id=9.4A
V
Ta=125°C
Rds(on) Vgs=4.5V, Id=8A
Vgs=2.5V, Id=6A
Vgs=1.8V, Id=4A
Forward transconductance
Gfs Vds=5V, Id=9.4A
Diode forward voltage
Vsd Is=1A
Max. body-diode continuous current
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Qg
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=9.4A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Vgs=10V, Vds=10V
Turn-on rise time
tr
Turn-off delay time
td(off) RL=1.1Ω, Rgen=3Ω
tf
Turn-off fall time
Body diode reverse recovery time
trr
If=9.4A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr If=9.4A, dIf/dt=100A/μs
±12
0.50
30
0.75
1.00
11.0
14.3
12.6
16.5
23.4
37
0.72
14.0
17.0
16.0
22.0
30.0
1.00
3
μA
μA
V
V
A
mΩ
S
V
A
1810
232
200
1.6
pF
pF
pF
Ω
17.9
1.5
4.7
3.3
5.9
44.0
7.7
22.0
8.6
nC
nC
nC
ns
ns
ns
ns
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating
is based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET
ELM14806AA-N
■Typical electrical and thermal characteristics
40
10V
20
4.5V
2.5V
2V
Id (A)
Id (A)
Vds=5V
16
30
20
12
8
10
125°C
4
Vgs=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=1.8V
30
Vgs=2.5V
20
Vgs=4.5V
10
Vgs=10V
0
Vgs=2.5V,6A
Vgs=4.5V, 8A
1.4
Vgs=1.8V, 4A
1.2
Vgs=10V, 9.4A
1
0.8
0
5
10
15
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1.0E+01
1.0E+00
30
125°C
Id=6A
1.0E-01
Is (A)
Rds(on) (m� )
3
1.6
Normalized On-Resistance
Rds(on) (m� )
40
1
125°C
20
25°C
1.0E-03
25°C
10
1.0E-02
1.0E-04
0
0
2
4
6
8
1.0E-05
10
0.0
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Dual N-channel MOSFET
ELM14806AA-N
5
2400
Capacitance (pF)
4
Vgs (Volts)
2800
Vds=10V
Id=9.4A
3
2
1
2000
Ciss
1600
1200
800
Coss
Crss
400
0
0
4
8
12
16
0
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100.0
40
1ms
100�s
30
Power (W)
Id (Amps)
Rds(on)
limited
10ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
0.1
DC
1
10
0
0.001
100
Vds (Volts)
Z� ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
10
10s
0.1
20
Tj(max)=150°C
Ta=25°C
10�s
10.0
15
Vds (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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