elm34806aa

Dual N-channel MOSFET
ELM34806AA-N
■General description
■Features
ELM34806AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=40V
Id=7A
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
40
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
7
6
40
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
2.0
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Typ.
Rθja
■Pin configuration
Max.
Unit
62.5
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE1
GATE1
SOURCE2
4
5
6
GATE2
DRAIN2
DRAIN2
7
8
DRAIN1
DRAIN1
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM34806AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=30V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
nA
3.0
V
A
1
mΩ
1
1
S
V
1
1
Is
1.3
A
Ism
2.6
A
Rds(on)
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gfs
Vsd
Coss
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
1.5
21
28
Vgs=4.5V, Id=6A
30
42
Vds=10V, Id=5A
If=Is, Vgs=0V
24
Vgs=0V, Vds=10V, f=1MHz
Vgs=5V, Vds=20V, Id=7A
Vgs=10V, Vds=20V, Id=1A
td(off) Rgen=6Ω
tf
trr
1.0
20
Vgs=10V, Id=7A
Ciss
Qg
Qgs
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
μA
±100
Static drain-source on-resistance
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Max.body-diode continuous current
40
Vds=32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
If=5A, dIf/dt=100A/μs
Qrr
790
pF
175
65
pF
pF
16.0
2.5
nC
nC
2
2
2.1
2.2
4.4
nC
ns
2
2
7.5
15.0
ns
2
11.8
21.3
ns
2
11.0
15.5
20.0
ns
ns
2
7.9
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
3
nC
NIKO-SEM
P2804HVG
Dual N-Channel Enhancement Mode
FieldN-channel
Effect Transistor
Dual
MOSFET
SOP-8
Lead-Free
ELM34806AA-N
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
25° C
1
-55° C
0.1
0.01
0.001
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
4-3
3
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Dual
N-channel
MOSFET
Field
Effect Transistor
ELM34806AA-N
4-4
P2804HVG
SOP-8
Lead-Free
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