elm34812aa

Dual N-channel MOSFET
ELM34812AA-N
■General description
■Features
ELM34812AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=20V
Id=7A
Rds(on) < 21mΩ (Vgs=4.5V)
Rds(on) < 35mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
20
±12
7
6
38
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
V
V
A
A
2.0
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Typ.
Rθja
■Pin configuration
Max.
Unit
62.5
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE1
2
3
GATE1
SOURCE2
4
5
6
GATE2
DRAIN2
DRAIN2
7
8
DRAIN1
DRAIN1
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM34812AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=16V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±12V
nA
1.2
V
A
1
mΩ
1
1.2
S
V
1
1
Is
1.3
A
Ism
2.5
A
Rds(on)
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gfs
Vsd
Coss
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
0.8
15
21
Vgs=2.5V, Id=6A
21
35
Vds=5V, Id=7A
If=1A, Vgs=0V
37
Vgs=0V, Vds=10V, f=1MHz
Vgs=4.5V, Vds=10V, Id=7A
Vgs=4.5V, Vds=10V, Id=1A
td(off) Rgen=6Ω
tf
trr
0.5
15
Vgs=4.5V, Id=7A
Ciss
Qg
Qgs
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
μA
±100
Static drain-source on-resistance
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Max.body-diode continuous current
20
Vds=16V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
If=5A, dIf/dt=100A/μs
Qrr
1082
pF
277
130
pF
pF
12
2
4-2
nC
nC
2
2
2
2
3
8
16
nC
ns
8
16
ns
2
24
38
ns
2
8
15.5
16
ns
ns
2
7.9
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
19
3
nC
NIKO-SEM
P2002IVG
Dual
N-Channel
Enhancement
Mode
Dual
N-channel
MOSFET
Field Effect Transistor
ELM34812AA-N
SOP-8
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
Is , Reverse Drain Current(A)
V GS = 0V
10
T A= 125° C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
4-3
3
0
0.2
0.4
0.6
0.8
VSD , Body Diode Forward Voltage (V)
1.0
MAY-19-2005
1.2
NIKO-SEM
Dual
N-channel
MOSFET
Dual
N-Channel
Enhancement
Mode
Field
Effect Transistor
ELM34812AA-N
4
4-4
P2002IVG
SOP-8
Lead-Free
MAY-19-2005
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