Dual N-channel MOSFET ELM34812AA-N ■General description ■Features ELM34812AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=7A Rds(on) < 21mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 20 ±12 7 6 38 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg V V A A 2.0 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE1 2 3 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34812AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=16V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±12V nA 1.2 V A 1 mΩ 1 1.2 S V 1 1 Is 1.3 A Ism 2.5 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr 0.8 15 21 Vgs=2.5V, Id=6A 21 35 Vds=5V, Id=7A If=1A, Vgs=0V 37 Vgs=0V, Vds=10V, f=1MHz Vgs=4.5V, Vds=10V, Id=7A Vgs=4.5V, Vds=10V, Id=1A td(off) Rgen=6Ω tf trr 0.5 15 Vgs=4.5V, Id=7A Ciss Qg Qgs Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge μA ±100 Static drain-source on-resistance Pulsed current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Max.body-diode continuous current 20 Vds=16V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=5A, dIf/dt=100A/μs Qrr 1082 pF 277 130 pF pF 12 2 4-2 nC nC 2 2 2 2 3 8 16 nC ns 8 16 ns 2 24 38 ns 2 8 15.5 16 ns ns 2 7.9 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 19 3 nC NIKO-SEM P2002IVG Dual N-Channel Enhancement Mode Dual N-channel MOSFET Field Effect Transistor ELM34812AA-N SOP-8 Lead-Free ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 Is , Reverse Drain Current(A) V GS = 0V 10 T A= 125° C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 4-3 3 0 0.2 0.4 0.6 0.8 VSD , Body Diode Forward Voltage (V) 1.0 MAY-19-2005 1.2 NIKO-SEM Dual N-channel MOSFET Dual N-Channel Enhancement Mode Field Effect Transistor ELM34812AA-N 4 4-4 P2002IVG SOP-8 Lead-Free MAY-19-2005