elm16800ea

Dual N-channel MOSFET
ELM16800EA-S
■General description
■Features
ELM16800EA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
•
Vds=30V
Id=3.4A (Vgs=10V)
Rds(on) < 60mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
Rds(on) < 115mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±12
3.4
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
2.7
20
1.15
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
0.73
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Pin No.
Pin name
5
1
2
GATE1
SOURCE2
3
4
GATE2
DRAIN2
5
6
SOURCE1
DRAIN1
1
2
4
3
Max.
Unit
78
106
64
110
150
80
°C/W
°C/W
°C/W
Note
1
3
■Circuit
SOT-26(TOP VIEW)
6
Typ.
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM16800EA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
μA
100
nA
1.0
1.4
V
A
50
60
Vgs=4.5V, Id=3A
Vgs=2.5V, Id=2A
66
60
88
80
75
115
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=10V, Id=3.4A
Static drain-source on-resistance
Rds(on)
V
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
30
Ta=125°C
0.6
20
Forward transconductance
Gfs
Vds=5V, Id=3A
7.8
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=1A, Vgs=0V
0.8
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
S
1.0
1.5
V
A
390.0
pF
Vgs=0V, Vds=0V, f=1MHz
54.5
41.0
3
pF
pF
Ω
Vgs=4.5V, Vds=15V, Id=3.4A
4.96
0.80
nC
nC
1.72
6.8
nC
ns
3.6
ns
35.2
13.7
11.4
ns
ns
ns
6.0
nC
Vgs=0V, Vds=15V, f=1MHz
Vgs=10V, Vds=15V
td(off) RL=4.7Ω, Rgen=6Ω
tf
trr
If=3.4A, dIf/dt=100A/μs
Qrr
mΩ
If=3.4A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET
ELM16800EA-S
■Typical electrical and thermal characteristics
15
10
10V
3V
Vds=5V
8
4.5V
25°C
9
Id (A)
Id (A)
12
2.5V
6
3
125°C
6
4
2
Vgs=2V
0
0
0
1
2
3
4
5
0
0.5
Vds (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
3.5
Vgs (Volts)
Figure 2: Transfer Characteristics
150
Normalized On-Resistance
1.8
125
Rds(on) (m� )
1
Vgs=2.5V
100
Vgs=4.5V
75
50
Vgs=10V
25
0
1.6
Vgs=4.5V
Vgs=10V
1.4
1.2
Vgs=2.5V
1
0.8
0
2
4
6
8
10
0
25
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
1.0E+00
Id=2A
1.0E-01
100
Is (A)
Rds(on) (m� )
150
125°C
125°C
1.0E-02
1.0E-03
50
25°C
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Dual N-channel MOSFET
ELM16800EA-S
5
500
Capacitance (pF)
4
Vgs (Volts)
600
Vds=15V
Id=3.4A
3
2
1
Ciss
400
300
200
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
100�s
1ms
10s
DC
0.1
1
Z� ja Normalized Transient
Thermal Resistance
25
30
Tj(max)=150°C
Ta=25°C
10
Vds (Volts)
10
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
5
1s
0.1
15
15
10�s
0.1s 10ms
1.0
10
20
Tj(max)=150°C
Ta=25°C
10.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
Id (Amps)
100.0
Crss
Coss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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