elm17800ga

Dual N-channel MOSFET
ELM17800GA-S
■General description
■Features
ELM17800GA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
•
•
•
•
•
•
Vds=20V
Id=0.9A (Vgs=4.5V)
Rds(on) < 300mΩ (Vgs=4.5V)
Rds(on) < 350mΩ (Vgs=2.5V)
Rds(on) < 450mΩ (Vgs=1.8V)
ESD Rating : 1500V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
20
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
±8
0.9
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
Pd
Junction and storage temperature range
Tj, Tstg
A
1
A
2
W
1
0.7
5
Idm
Power dissipation
V
0.30
0.19
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
SC-70-6(TOP VIEW)
6
1
5
2
4
3
Typ.
360
Max.
415
Unit
°C/W
400
300
460
350
°C/W
°C/W
Note
1
3
■Circuit
Pin No.
1
Pin name
SOURCE1
2
3
4
GATE1
DRAIN2
SOURCE2
5
6
GATE2
DRAIN1
4-1
D1
D2
G2
G1
S1
S2
Dual N-channel MOSFET
ELM17800GA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Idss
20
1
Vds=16V, Vgs=0V
Ta=55°C
5
Gate-source leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=250μA
0.50
On state drain current
Id(on) Vgs=4.5V, Vds=5V
5
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rds(on)
Gfs
Vsd
0.75
Vgs=2.5V, Id=0.75A
300
350
350
Vgs=1.8V, Id=0.7A
Vds=5V, Id=0.8A
Is=0.5A, Vgs=0V
317
2.6
0.69
450
Ta=125°C
Ciss
Qg
Qgs
Qgd
101
Vgs=0V, Vds=10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=4.5V, Vds=10V, Id=0.8A
td(on)
tr
Vgs=5V, Vds=10V
td(off) RL=12.5Ω, Rgen=6Ω
μA
μA
V
A
Is
Coss
Crss
Rg
25
0.90
181
253
237
Vgs=4.5V, Id=0.9A
Static drain-source on-resistance
V
17
14
3
1.57
0.13
0.36
mΩ
1.00
S
V
0.4
A
120
pF
4
pF
pF
Ω
1.90
nC
nC
nC
3.2
4.0
15.5
ns
ns
ns
ns
ns
tf
trr
If=0.8A, dIf/dt=100A/μs
2.4
6.7
Qrr
If=0.8A, dIf/dt=100A/μs
1.6
8.1
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET
ELM17800GA-S
■Typical electrical and thermal characteristics
10
4
8V
10V
Vds=5V
5V
8
3
3.5V
6
3V
4
25°C
125°C
Id (A)
Id (A)
4V
2
2.5V
Vgs=2V
2
1
0
0
0
1
2
3
4
5
0
0.5
Vds (Volts)
Fig 1: On-Region Characteristics
1.5
1.8
440
Normalized On-Resistance
Vgs=1.8V
400
360
320
Vgs=2.5V
280
240
Vgs=4.5V
200
2
2.5
3
Vgs (Volts)
Figure 2: Transfer Characteristics
480
Rds(on) (m� )
1
Vgs=1.8V
1.6
Vgs=2.5V
Id=0.75A
Id=0.7A
1.4
Vgs=4.5V
Id=0.9A
1.2
1
160
0
1
2
3
0.8
4
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
500
460
1E+00
420
125°C
Id=0.9A
380
1E-01
340
Is (A)
Rds(o) (m� )
25
125°C
300
260
1E-02
25°C
1E-03
220
25°C
1E-04
180
140
1
2
3
4
5
6
7
1E-05
8
0.0
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.4
0.8
1.2
1.6
Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
2.0
Dual N-channel MOSFET
ELM17800GA-S
200
5
Vds=10V
Id=0.9A
Capacitance (pF)
Vgs (Volts)
4
3
2
1
150
Ciss
100
Coss
50
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
5
10.0
Tj(max)=150°C, Ta=25°C
Rds(on)
limited
10ms
16
100�s
1s
0.1
10s
1
10
0
0.001
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=415°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
10
8
4
DC
0.0
0.1
20
12
1ms
0.1s
15
Tj(max)=150°C
Ta=25°C
10�s
Power (W)
1.0
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
Id (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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