elm14801ab

Dual P-channel MOSFET
ELM14801AB-N
■General description
■Features
ELM14801AB-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 48mΩ (Vgs=-10V)
Rds(on) < 57mΩ (Vgs=-4.5V)
Rds(on) < 80mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±12
-5
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Idm
-4
-28
Ias, Iar
Eas, Ear
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
3
17
A
3
14
2.0
mJ
3
W
2
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
48.0
Max.
62.5
Unit
°C/W
Note
1
74.0
32.0
90.0
40.0
°C/W
°C/W
1, 4
■Circuit
Pin No.
Pin name
1
2
SOURCE2
GATE2
3
4
SOURCE1
GATE1
5
6
7
DRAIN1
DRAIN1
DRAIN2
8
DRAIN2
5-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM14801AB-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=-250μA, Vgs=0V
Idss
Vds=-30V, Vgs=0V
-30
-1
Ta=55°C
-5
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA
-0.5
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-28
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
NOTE :
Rds(on)
Gfs
Vsd
-0.9
Ta=125°C
Vgs=-4.5V, Id=-3.5A
48
72
57
Vgs=-2.5V, Id=-2.5A
Vds=-5V, Id=-5A
Is=-1A, Vgs=0V
60
18
-0.7
80
Ciss
Qg
Qgs
Qgd
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-5A
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) RL=3Ω, Rgen=6Ω
μA
nA
V
A
Is
Coss
Crss
Rg
±100
-1.3
40
60
45
Vgs=-10V, Id=-5A
Static drain-source on-resistance
V
mΩ
-1.0
S
V
-2.5
A
515
645
780
pF
55
30
4.0
80
55
7.8
105
80
12.0
pF
pF
Ω
5.0
7.0
1.5
2.5
9.0
nC
nC
nC
6.5
3.5
41.0
ns
ns
ns
15
ns
ns
5.0
nC
tf
trr
If=-5A, dIf/dt=100A/μs
9.0
11
Qrr
If=-5A, dIf/dt=100A/μs
3.5
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment
with Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA
curve provides a single pulse rating.
5-2
Dual P-channel MOSFET
AO4801A
ELM14801AB-N
■Typical electrical and thermal characteristics
30
20
-10V
25
VDS=-5V
-4.5V
15
-ID(A)
-ID (A)
15
-3V
20
-2.5V
10
125°C
10
25°C
5
5
VGS=-2V
0
0
0
1
2
3
4
0
5
1
1.5
90
Normalized On-Resistance
1.8
VGS=-2.5V
70
VGS=-4.5V
50
30
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note 5)
RDS(ON) (mΩ )
0.5
VGS=-10V
VGS=-4.5V
ID=-3.5A
1.6
VGS=-10V
ID=-5A
1.4
VGS=-2.5V
ID=-2.5A
1.2
1
0.8
10
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note 5)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note 5)
100
1.0E+01
ID=-5A
1.0E+00
125°C
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ )
80
60
1.0E-02
25°C
1.0E-03
40
25°C
1.0E-04
1.0E-05
20
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
5-3
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
1.2
Dual P-channel MOSFET
ELM14801AB-N
1200
5
VDS=-15V
ID=-5A
1000
Ciss
Capacitance (pF)
-VGS (Volts)
4
3
2
800
600
400
1
0
Crss
0
0
3
6
9
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
100.0
10µs
RDS(ON)
limited
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
1
10
1
0.00001
100
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 6)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note 6)
10
100
10
1s
10s
DC
0.0
0.1
30
TJ(Max)=150°C
TA=25°C
1000
100µs
1.0
Zθ JA Normalized Transient
Thermal Resistance
5
10000
Power (W)
10.0
-ID (Amps)
Coss
200
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6)
5-4
100
1000
Dual P-channel MOSFET
ELM14801AB-N
■Test circuit & waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
+
VDC
-
Qgd
Qgs
Vds
+
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
DUT
Vgs
VDC
-
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
toff
ton
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
VDC
-
Vgs
Vgs
+
Rg
Vdd
BVDSS
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
-Vds
5-5
Vdd
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