elm14805aa

Dual P-channel MOSFET
ELM14805AA-N
■General description
■Features
ELM14805AA-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
Vds=-30V
Id=-8A (Vgs=-20V)
Rds(on) < 18mΩ (Vgs=-20V)
Rds(on) < 19mΩ (Vgs=-10V)
■Maximum absolute ratings
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Limit
Unit
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±25
-8.0
-6.9
V
A
1
-40
2.00
1.44
A
2
W
1
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Pd
Tj, Tstg
-55 to 150
Note
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
50.0
73.0
62.5
110.0
°C/W
°C/W
1
Maximum junction-to-lead
Steady-state
Rθjl
31.0
40.0
°C/W
3
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
■Circuit
Pin No.
Pin name
1
2
3
SOURCE2
GATE2
SOURCE1
4
5
6
GATE1
DRAIN1
DRAIN1
7
8
DRAIN2
DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM14805AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±25V
Gate threshold voltage
On state drain current
Rds(on)
Gfs
Vds=-5V, Id=-8A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-1.7
-40
Ta=125°C
Vgs=-20V, Id=-8A
Vgs=-4.5V, Id=-5A
Forward transconductance
V
-1
-5
μA
±100
nA
-2.5
-3.0
V
A
16.0
19.0
20.5
15.0
33.0
25.0
18.0
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Vgs=-10V, Id=-8A
Static drain-source on-resistance
-30
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-10V, Vds=-15V
Id=-8A
16
21
mΩ
S
-0.75
-1.00
-2.6
V
A
2076
2500
pF
3
pF
pF
Ω
503
302
2
39.0
8.0
45.0
nC
nC
11.4
12.7
nC
ns
Vgs=-10V, Vds=-15V
7.0
ns
td(off) RL=1.8Ω, Rgen=3Ω
tf
trr
If=-8A, dIf/dt=100A/μs
25.2
12.0
32
ns
ns
ns
Qrr
If=-8A, dIf/dt=100A/μs
26
40
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual P-channel MOSFET
ELM14805AA-N
■Typical electrical and thermal characteristics
50
-10V
-8V
25
-6V
20
-5V
30
20
-Id (A)
-Id (A)
Vds=-5V
-5.5V
40
-4.5V
10
15
10
125°C
5
Vgs=-4V
25°C
0
0
0
1
2
3
4
0
5
0.5
30
2
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.4
25
Rds(on) (m� )
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=-6V
20
15
Vgs=-10V
10
5
0
Id=-8A
1.3
Vgs=-10V
1.2
1.1
Vgs=-4.5V
1
0.9
0.8
0
5
10
15
20
25
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
60
1.0E+01
50
1.0E+00
Id=-8A
1.0E-01
40
30
125°C
20
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-Is (A)
Rds(on) (m� )
1
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
10
25°C
1.0E-05
1.0E-06
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Dual P-channel MOSFET
ELM14805AA-N
10
2500
Capacitance (pF)
8
-Vgs (Volts)
3000
Vds=-15V
Id=-8A
6
4
Ciss
2000
1500
Coss
1000
2
Crss
500
0
0
5
10
15
20
25
30
35
0
40
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
100�s
1ms
Rds(on)
limited
10�s
10ms
1s
DC
30
Tj(max)=150°C
Ta=25°C
20
0
0.01
0.1
1
-Vds (Volts)
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
25
10
10s
10
20
30
0.1s
0.1
15
40
Tj(max)=150°C
Ta=25°C
1.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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