Dual P-channel MOSFET ELM34801AA-N ■General description ■Features ELM34801AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 80mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current -6 -5 -30 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Rθja ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. Unit 62.5 °C/W Note ■Circuit Pin No. Pin name 1 2 3 SOURCE1 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM34801AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±20V μA ±100 nA -3.0 V A 1 mΩ 1 -1.2 S V 1 1 Is -2.1 A Ism -4 A Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous curren -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd -0.9 -30 -1.5 Vgs=-10V, Id=-6A 40 50 Vgs=-4.5V, Id=-5A 65 80 Vds=-10V, Id=-6A If=-1A, Vgs=0V 16 Ciss 530 pF Coss Vgs=0V, Vds=-15V, f=1MHz Crss 135 70 pF pF Gate-source charge Qg Qgs 10.0 2.2 Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Vgs=-10V, Vds=-15V Id=-6A Vgs=-10V, Vds=-15V td(off) Id=-1A, RL=1Ω, Rgen=6Ω nC nC 2 2 2.0 5.7 nC ns 2 2 10.0 ns 2 18.0 ns 2 ns ns 2 nC Turn-off fall time Body diode reverse recovery time tf trr If=-5A, dIf/dt=100A/μs 5.0 15.5 Body diode reverse recovery charge Qrr If=-5A, dIf/dt=100A/μs 7.9 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 14.0 3 Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor Dual P-channel MOSFET SOP-8 Lead Free ELM34801AA-N ■Typical electrical and thermal characteristics 3 4-3 May-04-2005 Logic Level Enhancement P06B03LVG Dual P-channel MOSFET NIKO-SEM Dual P-Channel Mode Field Effect Transistor ELM34801AA-N 4 4-4 SOP-8 Lead Free May-04-2005