elm34801aa

Dual P-channel MOSFET
ELM34801AA-N
■General description
■Features
ELM34801AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-6A
Rds(on) < 50mΩ (Vgs=-10V)
Rds(on) < 80mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-6
-5
-30
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
Unit
62.5
°C/W
Note
■Circuit
Pin No.
Pin name
1
2
3
SOURCE1
GATE1
SOURCE2
4
5
6
GATE2
DRAIN2
DRAIN2
7
8
DRAIN1
DRAIN1
4-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM34801AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±20V
μA
±100
nA
-3.0
V
A
1
mΩ
1
-1.2
S
V
1
1
Is
-2.1
A
Ism
-4
A
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous curren
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
-0.9
-30
-1.5
Vgs=-10V, Id=-6A
40
50
Vgs=-4.5V, Id=-5A
65
80
Vds=-10V, Id=-6A
If=-1A, Vgs=0V
16
Ciss
530
pF
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
135
70
pF
pF
Gate-source charge
Qg
Qgs
10.0
2.2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Vgs=-10V, Vds=-15V
Id=-6A
Vgs=-10V, Vds=-15V
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
nC
nC
2
2
2.0
5.7
nC
ns
2
2
10.0
ns
2
18.0
ns
2
ns
ns
2
nC
Turn-off fall time
Body diode reverse recovery time
tf
trr
If=-5A, dIf/dt=100A/μs
5.0
15.5
Body diode reverse recovery charge
Qrr
If=-5A, dIf/dt=100A/μs
7.9
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
14.0
3
Logic Level Enhancement P06B03LVG
NIKO-SEM Dual P-Channel
Mode Field Effect Transistor
Dual P-channel MOSFET
SOP-8
Lead Free
ELM34801AA-N
■Typical electrical and thermal characteristics
3
4-3
May-04-2005
Logic Level
Enhancement P06B03LVG
Dual P-channel
MOSFET
NIKO-SEM Dual P-Channel
Mode Field Effect Transistor
ELM34801AA-N
4
4-4
SOP-8
Lead Free
May-04-2005
Similar pages