Dual P-channel MOSFET ELM57801GA-S ■General description ■Features ELM57801GA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-20V Id=-1.4A Rds(on) < 600mΩ (Vgs=-4.5V) Rds(on) < 800mΩ (Vgs=-2.5V) Rds(on) < 1600mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current Tc=25°C Tc=70°C Tj, Tstg ■Pin configuration SC-70-6(TOP VIEW) 1 2 4 3 A A 0.3 0.2 -55 to 150 Pd Junction and storage temperature range V V -1.4 -1.0 -6 Idm Power dissipation 5 -20 ±12 Id Pulsed drain current 6 Ta=25°C. Unless otherwise noted. Limit Unit W °C ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 DRAIN2 4 5 SOURCE2 GATE2 6 DRAIN1 5-1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM57801GA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-20V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS -20 -1 Ta=85°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-4.5V, Id=-0.6A Rds(on) Vgs=-2.5V, Id=-0.5A Vgs=-1.8V, Id=-0.4A Gfs Vds=-10V, Id=-0.4A Vsd V Is=-0.15A, Vgs=0V -5 -0.4 -0.7 Ciss Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr RL=30Ω, Id=-0.2A td(off) Rgen=10Ω tf Qg Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-0.25A Vgs=-4.5V, Vds=-10V 5-2 ±100 nA -1.0 V A 460 600 680 1200 1 800 1600 -0.65 -1.20 V -1 A 70 20 10 100 pF pF pF 1.0 1.3 nC Is Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge μA mΩ S 0.1 0.3 nC nC 10 15 ns 10 40 15 60 ns ns 30 50 ns AFP1913 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET Dual P-channel MOSFET ELM57801GA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 3 5-3 AFP1913 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET Dual P-channel MOSFET ELM57801GA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 4 5-4 AFP1913 Alfa-MOS 20V P-Channel Dual P-channel MOSFET Technology Enhancement Mode MOSFET ELM57801GA-S ■Test circuit & waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 5 5-5