elm57801ga

Dual P-channel MOSFET
ELM57801GA-S
■General description
■Features
ELM57801GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-1.4A
Rds(on) < 600mΩ (Vgs=-4.5V)
Rds(on) < 800mΩ (Vgs=-2.5V)
Rds(on) < 1600mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Tc=25°C
Tc=70°C
Tj, Tstg
■Pin configuration
SC-70-6(TOP VIEW)
1
2
4
3
A
A
0.3
0.2
-55 to 150
Pd
Junction and storage temperature range
V
V
-1.4
-1.0
-6
Idm
Power dissipation
5
-20
±12
Id
Pulsed drain current
6
Ta=25°C. Unless otherwise noted.
Limit
Unit
W
°C
■Circuit
Pin No.
1
2
Pin name
SOURCE1
GATE1
3
DRAIN2
4
5
SOURCE2
GATE2
6
DRAIN1
5-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM57801GA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
-20
-1
Ta=85°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V, Id=-0.6A
Rds(on) Vgs=-2.5V, Id=-0.5A
Vgs=-1.8V, Id=-0.4A
Gfs Vds=-10V, Id=-0.4A
Vsd
V
Is=-0.15A, Vgs=0V
-5
-0.4
-0.7
Ciss
Coss
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
RL=30Ω, Id=-0.2A
td(off)
Rgen=10Ω
tf
Qg
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-0.25A
Vgs=-4.5V, Vds=-10V
5-2
±100
nA
-1.0
V
A
460
600
680
1200
1
800
1600
-0.65
-1.20
V
-1
A
70
20
10
100
pF
pF
pF
1.0
1.3
nC
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
μA
mΩ
S
0.1
0.3
nC
nC
10
15
ns
10
40
15
60
ns
ns
30
50
ns
AFP1913
Alfa-MOS
20V P-Channel
Technology
Enhancement Mode MOSFET
Dual P-channel MOSFET
ELM57801GA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 3
5-3
AFP1913
Alfa-MOS
20V P-Channel
Technology
Enhancement Mode MOSFET
Dual P-channel MOSFET
ELM57801GA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 4
5-4
AFP1913
Alfa-MOS
20V P-Channel
Dual P-channel MOSFET
Technology
Enhancement Mode MOSFET
ELM57801GA-S
■Test circuit & waveform
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 5
5-5
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