Single N-channel MOSFET ELM3D0703A-S ■General description ■Features ELM3D0703A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Vds=30V Id=30A Rds(on) < 7.0mΩ (Vgs=10V) Rds(on) < 12.0mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V Drain-source voltage Symbol Vds Gate-source voltage Vgs ±20 V Id 15 12 A Idm Ias Eas 150 36 66 A A mJ Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range 2.5 1.6 -55 to 150 Pd Tj, Tstg 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration PDFN-5×6(TOP VIEW) 8 • 1 7 2 6 3 5 4 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4- 1 Typ. Max. 2 Unit °C/W 50 °C/W Note ■Circuit D G S Single N-channel MOSFET ELM3D0703A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=30A Rds(on) Vgs=4.5V, Id=15A Vds=15V, Id=17A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=30A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Rg 1.0 μA ±100 nA 1.7 6.0 3.0 7.0 V 9.6 12.0 57 1.2 30 mΩ 1 S 1 V A 1 Vgs=0V, Vds=15V, f=1MHz 1210 306 182 pF pF pF Vgs=0V, Vds=0V, f=1MHz 1.45 Ω 24.0 11.0 5.0 nC nC nC 2 2 2 Qg Qgs V 1 Gfs Total gate charge (Vgs=4.5V) Gate-source charge 30 Vds=24V, Vgs=0V Forward transconductance Gate resistance SWITCHING PARAMETERS Total gate charge (Vgs=10V) Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vds=15V, Vgs=10V, Id=30A Gate-drain charge Turn-on delay time Qgd td(on) 5.5 18 nC ns 2 2 Turn-on rise time Turn-off delay time tr 10 ns 2 35 ns 2 10 30 ns ns 2 Turn-off fall time Body diode reverse recovery time Vds=15V, RL=1.5Ω, Id=10A, td(off) Vgs=10V, Rgen=6Ω tf trr If=30A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4- 2 55 Single N-channel MOSFET ELM3D0703A-S ■Typical electrical and thermal characteristics 4- 3 Single N-channel MOSFET ELM3D0703A-S � �� �� �� �� 4- 4