elm3dk618a

Single N-channel MOSFET
ELM3DK618A-S
■General description
■Features
ELM3DK618A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Tc=25°C
Tc=100°C
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
Idm
Ta=25°C
Ta=70°C
Continuous drain current
15
12
31
Id
Ias
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=100°C
Power dissipation
Eas
Junction and storage temperature range
Tj, Tstg
4
A
3
A
mJ
W
2.5
1.6
-55 to 150
Pd
A
A
48
34
13
Pd
Ta=25°C
Ta=70°C
Power dissipation
V
59
37
150
Id
Pulsed drain current
Vds=30V
Id=15A
Rds(on) < 5.5mΩ (Vgs=10V)
Rds(on) < 8.0mΩ (Vgs=4.5V)
W
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-case
Maximum junction-to-ambient
■Pin configuration
PDFN-5×6(TOP VIEW)
8
•
1
7
2
6
3
5
4
Rθjc
Rθja
Pin No.
Pin name
1
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4- 1
Typ.
Max.
Unit
Note
3.6
50.0
°C/W
°C/W
5
■Circuit
D
G
S
Single N-channel MOSFET
ELM3DK618A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Gfs
Vds=5V, Id=20A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=20A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Total gate charge (Vgs=4.5V)
Gate-source charge
Qg
Qgs
V
1
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=15A
Rg
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.50
μA
±100
nA
1.75
3.7
2.35
5.5
V
4.5
8.0
mΩ
1
S
1
V
A
1
4
60
1.2
59
1330
257
154
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
1.6
Ω
Vds=15V, Id=20A
Vgs=10V
28.0
15.0
4.0
nC
nC
nC
2
2
2
Vgs=0V, Vds=15V
f=1MHz
Gate-drain charge
Turn-on delay time
Qgd
td(on)
7.1
19
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
10
ns
2
40
ns
2
12
22
ns
ns
2
8
nC
Vds=15V, Id=20A
td(off) Vgs=10V, Rgen=6Ω
Turn-off fall time
Body diode reverse recovery time
tf
trr
Body diode reverse recovery charge
Qrr
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Package limitation current is 26A.
5. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
4- 2
Single N-channel MOSFET
N-Channel
Enhancement Mode
ELM3DK618A-S
Field Effect Transistor
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
■Typical electrical and thermal characteristics
Output Characteristics
40
PK618BA
Transfer Characteristics
40
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
VGS=3V
32
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
24
16
VGS=2.5V
8
0
0
1
2
3
4
5
32
24
16
25�
0
6
0
VDS, Drain-To-Source Voltage(V)
1
2
3
4
5
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
On-Resistance VS Temperature
1600
2.0
1.8
1280
1.6
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
-20�
125�
8
1.4
1.2
1.0
0.8
VGS=10V
ID=20A
0.6
CISS
960
640
320
COSS
CRSS
0.4
-50
-25
0
25
50
75
100
125
0
150
0
5
TJ , Junction Temperature(C)
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
100
VDS=15V
ID=20A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
10
6
4
2
0
0
6
12
18
24
10
150�
1
0.1
30
Qg , Total Gate Charge(nC)
25�
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-To-Drain Voltage(V)
D-06-3
REV 1.0
3
4- 3
Single N-channel MOSFET
ELM3DK618A-S
N-Channel
Enhancement Mode
Field Effect Transistor
NIKO-SEM
PK618BA
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
80
1000
Operation in This
Area is Limited by
RDS(ON)
Power(W)
ID , Drain Current(A)
Single Pulse
R�JA = 50 C/W
TA=25C
64
100
10
1ms
1
10ms
48
32
100ms
NOTE :
1.VGS= 10V
2.TA=25C
3.R�JA = 50 C/W
4.Single Pulse
0.1
0.01
0.1
16
DC
1
10
0
0.001
100
0.01
VDS, Drain-To-Source Voltage(V)
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
1
Duty cycle=0.5
0.2
0.1
Notes
0.1
0.05
0.02
1.Duty cycle, D= t1 / t2
2.RthJA = 50 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 1.0
4- 4
4
D-06-3
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