BCF040T

BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF040T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
•
•
•
•
23.0 dBm Typical Output Power
13 dB Typical Power Gain @ 12 GHz
Low Phase Noise
0.3 X 400 Micron Recessed Gate
Applications
•
•
•
Commercial
Military / Hi-Rel
Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNIT
160
mA
Idss
Saturated Drain Current (Vgs = 0V, Vds = 2V)
80
120
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss)
50
70
Vp
Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
-3.5
-2.0
-0.5
BVgd
Drain Breakdown Voltage (Ig = 0.2 mA, source open)
-15
-11
V
BVgs
Source Breakdown Voltage (Ig = 0.2 mA, drain open)
-10
-7
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
www.berex.com
100
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
mS
V
° C/W
January 2015
Rev. 1.3
BCF040T
ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
MINIMUM
TYPICAL
21.0
20.5
11.0
8.4
23.0
22.5
13.0
10.4
32
30
MAXIMUM
UNIT
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
dBm
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
Noise figure (Vds = 2V, Ids = 10 mA)
12 GHz
1.65
dB
Ga
Associated Gain (Vds = 2V, Ids = 10 mA)
12 GHz
10
dB
dB
%
ELECTRICAL CHARACTERISTIC (Vds = 6V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
MINIMUM
TYPICAL
20.5
202
10.8
8.3
22.5
22.2
12.8
10.3
39
37
MAXIMUM
UNIT
P1dB
Output Power @ P1dB (Vds = 6V, Ids = 50% Idss)
dBm
G1dB
Gain @ P1dB (Vds = 6V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 6V, Ids = 50% Idss)
NF
Noise figure (Vds = 2V, Ids = 10 mA)
12 GHz
1.65
dB
Ga
Associated Gain (Vds = 2V, Ids = 10 mA)
12 GHz
10
dB
dB
%
MAXIMUM RATINGS (Ta = 25° C)
PARAMETERS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
CONTINUOUS
12 V
-8 V
Idss
10 mA
18 dBm
175° C
-60° C - 150° C
1.4 W
8V
-4V
Idss
1.6 mA
@ 3dB compression
150° C
-60° C - 150° C
1.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCF040T
Pin_Pout/Gain, PAE (12 GHz)
Freq. = 12 GHz, Vds = 8 V, Ids = 50% Idss
Freq. = 12 GHz, Vds = 6 V, Ids = 50% Idss
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCF040T
Pin_Pout/Gain, PAE (18 GHz)
Freq. = 18 GHz, Vds = 8V, Ids = 50% Idss
Freq. = 18 GHz, Vds = 6V, Ids = 50% Idss
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCF040T
Wire Bonding Options
ㆍ Gold Bonding Wire information
1. Gate to input transmission line
- Length and Height : 400 um and 250 um
- Number of wires: 1
2. Drain to output transmission line
- Length and Height : 350 um and 250 um
- Number of wires: 1
3. Source to ground plate
- Length and Height : 200 um x 250 um
- Number of wires: 4
Note: The diameter of bonding wires: 1 mil
DIE ATTACH RECOMMENDATIONS:
BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have
accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less
than 10 seconds. An inert forming gas (90% N2-10% H2) or clean, dry N2 should be used.
HANDLING PRECAUTIONS:
GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD
precautions must be taken whenever you are handling these devices. It is critically important that all work
surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to
prevent ESD damage.
STORAGE & SHIPPING:
BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a
sealed antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of
protection from both mechanical and ESD damage.
Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are
required for assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000
or better clean room environment to prevent contamination of the exposed devices.
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCF040T
CAUTION:
THIS PRODUCT CONTAINS GALLIUM ARSENIDE (GaAs) WHICH CAN BE HAZARDOUS TO THE HUMAN BODY AND THE
ENVIRONMENT. THEREFORE, IT MUST BE HANDLED WITH CARE AND IN ACCORDANCE WITH ALL GOVERNMENTAL
AND COMPANY REGULATIONS FOR THE SAFE HANDLING AND DISPOSAL OF HAZARDOUS WASTE. DO NOT BURN,
DESTROY, CUT, CRUSH OR CHEMICALLY DISSOLVE THE PRODUCT. DO NOT LICK THE PRODUCT OR IN ANY WAY
ALLOW IT TO ENTER THE MOUTH. EXCLUDE THE PRODUCT FROM GENERAL INDUSTRIAL WASTE OR GARBAGE AND
DISPOSE OF ONLY IN ACCORDANCE TO APPLICABLE LAWS AND/OR ORDINANCES.
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT
THE EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions
for use provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
Similar pages