BCP080T2

BCP080T2
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
The BeRex BCP080T2 is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 800 micron gate width
making it ideally suited for applications requiring high-gain and medium power in the 1000 MHz to 27.5 GHz
frequency range. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The
BCP080T2 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
•
•
•
•
30 dBm Typical Output Power
11.5 dB Typical Power Gain @ 12 GHz
0.25 X 800 Micron Recessed Gate
2 Gate Pads / 2 Drain Pads
APPLICATIONS
•
•
•
Commercial
Military / Hi-Rel
Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
MIN.
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
160
Transconductance (Vds = 3V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 800 µA, Vds = 2V)
Drain Breakdown Voltage (Igd = 0.8 mA, source open)
Source Breakdown Voltage (Ig = 0.8 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
-2.5
TYPICAL
MAX.
UNIT
240
320
mA
320
-1.1
-16
-14
55
mS
V
V
V
°C/W
-0.5
-12
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
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TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
28.5
28.0
10.5
8.5
30.0
29.5
11.5
9.5
65
60
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
Rev. 1.7
MAX.
UNIT
dBm
dB
%
January 2015
BCP080T2
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
26.0
27.5
12.0
9.0
27.5
29.0
13.0
10.0
50
55
MAX.
UNIT
dBm
dB
%
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
40 mA
27 dBm
175° C
-60° C - 150° C
2.5 W
CONTINUOUS
8V
-3 V
Idss
7 mA
@ 3dB compression
150° C
-60° C - 150° C
2.1 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
Rev. 1.7
January 2015
BCP080T2
PIN_POUT/Gain, PAE (18 GHz)
Frequency = 18GHz
Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
S-PARAMETER (Vds = 8V, Ids = 50% Idss)
FREQ.
[GHZ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
[MAG]
S11
[ANG.]
0.90
0.86
0.84
0.84
0.84
0.84
0.84
0.85
0.85
0.86
0.87
0.88
0.89
0.90
0.91
0.92
0.93
0.93
0.94
0.94
0.94
0.93
0.94
0.93
0.93
0.94
-80.81
-122.78
-145.71
-161.07
-171.88
179.59
172.04
165.30
159.07
152.97
147.86
144.05
140.19
136.46
133.41
129.89
125.68
123.10
119.63
117.10
115.14
113.43
111.85
110.84
110.43
109.70
S21
[MAG]
14.18
9.47
6.86
5.31
4.31
3.61
3.09
2.69
2.37
2.10
1.87
1.67
1.51
1.37
1.25
1.14
1.06
0.97
0.89
0.81
0.75
0.68
0.63
0.58
0.52
0.48
S21
[ANG.]
132.87
109.07
94.32
83.42
74.30
66.44
59.24
52.08
45.42
38.83
32.61
27.23
21.68
16.47
11.89
6.67
1.22
-3.65
-8.89
-14.03
-17.90
-21.85
-25.51
-29.25
-32.33
-34.96
S12
[MAG]
0.034
0.045
0.048
0.049
0.049
0.049
0.049
0.049
0.049
0.048
0.047
0.047
0.047
0.048
0.049
0.049
0.052
0.052
0.054
0.056
0.058
0.060
0.062
0.062
0.062
0.063
S12
[ANG.]
48.617
31.997
24.841
20.743
19.202
18.561
17.423
18.330
18.362
18.850
19.849
20.641
19.988
20.783
21.641
20.932
20.105
19.082
17.318
16.112
17.116
16.972
15.759
13.961
16.654
20.335
S22
[MAG]
0.35
0.27
0.24
0.22
0.22
0.22
0.23
0.24
0.26
0.27
0.30
0.32
0.34
0.38
0.40
0.43
0.47
0.50
0.51
0.54
0.56
0.58
0.61
0.62
0.63
0.65
S22
[ANG.]
-53.62
-81.38
-97.12
-106.56
-115.48
-120.27
-125.61
-131.87
-136.95
-143.16
-148.66
-152.94
-158.21
-163.20
-165.72
-169.28
-172.45
-174.65
-177.15
179.71
176.92
173.39
170.90
167.56
163.31
160.51
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
Rev. 1.7
January 2015
BCP080T2
WIRE BONDING INFORMATION
Follow the wire bonding diagrams recommended by BeRex below to achieve optimum device performance. BeRex
recommends thermo-compression wedge bonding. As a general rule, bonding temperature should be kept to a
maximum of 280°C for no longer than 2 minutes for all bonding wires. Ultrasonic bonding is not recommended.
Bonding Wire information
1. Gate to input transmission line
- Length and Height : 400 um and 250 um
- Number of wire : 2 wire
2. Drain to output transmission line
- Length and Height : 300 um and 250 um
- Number of wire : 2 wire
3. Source to ground plate
- Length and Height : 200 um and 250 um
- Number of wire : 6 wires
※ The diameter of bonding wires : 1 mil.
DIE ATTACH RECOMMENDATIONS:
BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have accurate
temperature control, and the operation should be performed with parts no hotter than 300°C for less than 10 seconds. An
inert forming gas (90% N2-10% H2) or clean, dry N2 should be used.
HANDLING PRECAUTIONS:
GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD precautions must
be taken whenever you are handling these devices. It is critically important that all work surfaces, and assembly equipment, as
well as the operator be properly grounded when handling these devices to prevent ESD damage.
STORAGE & SHIPPING:
BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a sealed
antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of protection from both
mechanical and ESD damage.
Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are required for
assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000 or better clean room
environment to prevent contamination of the exposed devices.
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
Rev. 1.7
January 2015
BCP080T2
CAUTION:
THIS PRODUCT CONTAINS GALLIUM ARSENIDE (GaAs) WHICH CAN BE HAZARDOUS TO THE HUMAN BODY AND THE
ENVIRONMENT. THEREFORE, IT MUST BE HANDLED WITH CARE AND IN ACCORDANCE WITH ALL GOVERNMENTAL AND
COMPANY REGULATIONS FOR THE SAFE HANDLING AND DISPOSAL OF HAZARDOUS WASTE. DO NOT BURN, DESTROY, CUT,
CRUSH OR CHEMICALLY DISSOLVE THE PRODUCT. DO NOT LICK THE PRODUCT OR IN ANY WAY ALLOW IT TO ENTER THE
MOUTH. EXCLUDE THE PRODUCT FROM GENERAL INDUSTRIAL WASTE OR GARBAGE AND DISPOSE OF ONLY IN ACCORDANCE
TO APPLICABLE LAWS AND/OR ORDINANCES.
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE
EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b)
support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
For complete specifications, S-parameters and information on bonding and handling, visited our website;
www.berex.com
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
Rev. 1.7
January 2015
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