APPLICATION NOTE ICP - Mass Spectrometry Author Kenneth Ong PerkinElmer, Inc. Singapore Determination of Impurities in Semiconductor-Grade Nitric Acid with the NexION 300S/350S ICP-MS Introduction Semiconductor devices are currently being designed with smaller line widths and are more susceptible to low-level impurities. Nitric acid (HNO3) is widely used as a mixture with hydrofluoric acid (HF) to alter between diffusion-limited or rate-limited etching in the semiconductor industry. The mixture is commonly used to etch and expose the critical layer in the front-end processing. In this stage, the actual devices, including transistors and resistors, are created. A typical front-end process includes the following: preparation of the wafer surface, growth of silicon dioxide (SiO2), patterning and subsequent implantation or diffusion of dopants to obtain the desired electrical properties, growth or deposition of a gate dielectric and via etching. Any metal impurities present would have detrimental effects on the reliability of an IC device. Nitric acid is also commonly used in semiconductor laboratories to carry out analysis of other semiconductor materials, and thus needs to be of high purity and quality. SEMI Standard C35-0708 specifies the maximum concentration of metal contaminants by element and tier for nitric acid. Inductively coupled plasma mass spectrometry (ICP-MS) is an indispensable analytical tool for quality control because of its superior capability to detect at ultratrace (ng/L or parts-per-trillion) levels and ability to rapidly determine analytes in various process chemicals. Nevertheless, under conventional plasma conditions, argon ions combine with matrix components to generate polyatomic interferences. Some of the common interferences are 38Ar1H+ on 39K+, 40 Ar+ on 40Ca+, and 40Ar16O+ on 56Fe+. While cool plasma has been shown to be effective in reducing argon-based interferences, it is more prone to matrix suppression than hot plasma, especially for refractory elements or elements with high ionization potentials. In addition, other polyatomic interferences may be preferentially formed under the low plasma energy, which are not seen under hot plasma conditions. impurities in HNO3 can be measured under a single set of hot plasma conditions for all analytes in one analysis. This was best accomplished using both Standard and Reaction modes in a single method. Collision cells using multipoles and un-reactive gases have proven useful in reducing polyatomic interferences. This approach necessitates the use of kinetic energy discrimination (KED) to remove the unwanted by-products which could result in loss of sensitivity. The Dynamic Reaction Cell™ (DRC™) is another correction technique which uses a quadrupole mass filter to create Dynamic Bandpass Tuning (DBT), where only ions of a specific mass range pass through the cell, thus allowing only controlled reactions to take place. As a result of this capability, undesirable by-product ions do not form within the cell, even when very reactive gases are used, such as NH3 or O2. Results Experimental conditions Normally, the concentration of HNO3 is around 70%. In this experiment, a five-fold dilution is carried out on 55% ultra pure HNO3 (Tamapure-AA 10, Tama Chemicals, Tokyo, Japan). Standard solutions were made from a 10 mg/L multi-element standard (PerkinElmer Pure, PerkinElmer, Shelton, CT USA). The instrument used for this experiment was a NexION 300S ICP-MS (PerkinElmer, Shelton, CT USA). Instrumental parameters and sample introduction components are shown in Table 1. HNO3 samples were quantitatively analyzed using additions calibrations; the calibration curves for K, Ca, Fe and Ni are shown in Figures 1–4, indicating good linearity. This is possible with all the polyatomic interferences removed by the reactive NH3 gas in combination with the bandpass. The PerkinElmer NexION® 300 ICP-MS incorporates Universal Cell Technology™, which allows the use of Collision mode (with KED), Reaction mode (incorporating DBT), and Standard mode (where a cell gas is not used), and the user has the ability to select whichever mode(s) are most appropriate for the application, and switch between modes within the same analytical method. This application note demonstrates the ability of the NexION 300 ICP-MS to remove interferences so that trace levels of Figure 1. K calibration, with NH3 cell gas flow of 0.6 mL/min. Table 1. Instrumental parameters and sample introduction components for the NexION 300S ICP-MS. Spray Chamber: Quartz Cyclonic Plasma Gas: 18 L/min Torch: Standard Quartz Auxiliary Gas: 1.1 L/min Torch Injector: 2-mm Quartz Nebulizer Flow: 1.01 L/min Sampler Cone: Platinum RF Power: 1500 W Skimmer Cone: Platinum Integration Time: 1 sec/mass Nebulizer:Meinhard® Type A Concentric Quartz 2 Replicates: 3 The detection limits (DLs) and background equivalent concentrations (BECs) were both determined in 10% HNO3, while accounting for the sensitivities in 10% HNO3. DLs were calculated by multiplying the standard deviation by three, and BECs were determined by measuring the signal intensities. Recoveries were determined from 10 ng/L spikes. The results are summarized in Table 2. Stability was determined by continuous introduction into the NexION 300S of 10 ng/L spikes (without rinse) for 10 hours. Figures 5 and 6 show excellent stability, with RSDs of < 3% over 10 hours (Table 2, last column). The stability results, combined with the spike recovery data, highlight the ability of the NexION 300S ICP-MS for the determination of all SEMI-required elements in the HNO3 matrix. Figure 2. Ca calibration, with NH3 cell gas flow of 1 mL/min. Figure 5. Ten-hour long-term stability (normalized intensity) for a 10 ng/L spike for first group of analytes. Figure 3. Fe calibration, with NH3 cell gas flow of 0.6 mL/min. Figure 6. Ten-hour long-term stability (normalized intensity) for a 10 ng/L spike for second group of analytes. Figure 4. Ni calibration, with NH3 cell gas flow of 0.3 mL/min. 3 Table 2. Detection limits (DLs) and background equivalent concentrations (BECs) for all analytes in 10% HNO3, and 10 ng/L spike recoveries. Analyte Mass Cell Gas Flow* (mL/min) RPq BEC (ppt) 10 ppt Recovery % RSD Li 7 0 0.250.03 0.04 102% 2.7 Be 9 0 0.250.1 0.03 103% 3.3 B 11 0 0.251 11 100%3.2 Na 23 0 0.250.2 3.3 103% 2.1 Mg 24 0 0.250.1 0.4 102% 1.3 Al 27 0.6 0.50.4 1.0 96% 1.5 K 39 0.6 0.50.8 7 113% 1.7 Ca 40 1 0.50.5 3.2 97% 1.1 Ti 48 0.3 0.50.3 1.2 103% 1.8 V 51 0.6 0.5 Cr 52 0.3 0.50.5 2.0 102% 1.8 Mn 55 0.6 0.70.06 0.44 98% 1.3 Fe 56 0.6 0.50.9 7 113% 1.5 Co 59 0.3 0.50.03 0.18 106% 1.4 Ni 60 0.3 0.70.6 1.0 99% 1.8 Cu 63 0.3 0.50.2 1.3 103% 1.9 Zn 64 0.3 0.650.5 0.8 103% 2.9 Ga 69 0 0.250.07 0.24 103% 1.1 Ge 74 0.3 0.650.4 0.6 105% 1.8 As 75 0 0.250.2 0.7 100% 2.1 Sr 88 0 0.50.02 0.03 106% 1.4 Zr 90 0 0.25 Nb 93 0 0.250.02 0.03 100% 1.2 Mo 98 0 0.25 0.1 < DL 98% 1.8 Ru 102 0 0.25 0.1 < DL 96% 1.5 Rh 103 0 0.250.03 0.07 104% 1.2 Pd 106 0 0.250.3 0.4 102% 1.8 Ag 107 0 0.250.2 0.4 102% 1.7 Cd 114 0 0.25 0.1 < DL 101% 1.5 In 115 0 0.25 0.01 < DL 102% 1.6 Sn 120 0 0.250.2 0.7 99% 1.7 Sb 121 0 0.250.03 0.10 103% 1.6 Ba 138 0 0.250.03 0.04 101% 1.3 Ta 181 0 0.25 0.01 < DL 103% 2.0 W 184 0 0.25 0.05 < DL 100% 1.8 Pt 195 0 0.250.1 0.3 105% 1.9 Au 197 0 0.250.3 0.5 93% Tl 205 0 0.25 Pb 208 0 0.250.04 0.09 102% 1.5 Bi 209 0 0.25 0.02 < DL 103% 1.8 U 238 0 0.25 0.005 < DL 102% 1.9 *Cell gas used is NH3. 4 DL (ppt) 0.04 0.05 0.01 < DL < DL < DL 103% 102% 104% 1.3 1.4 – 1.2 Conclusion The NexION 300S ICP-MS has shown to be robust and suitable for the routine quantification of ultratrace impurities at the ng/L level in HNO3. By means of computer-controlled switching between Standard mode and Reaction mode in the Universal Cell, interference-free analysis using hot plasma conditions for all analytes is possible during a single sample run. References 1.SEMI Standard C35-0708, SEMI Standards, http://www. semi.org/en/index.htm PerkinElmer, Inc. 940 Winter Street Waltham, MA 02451 USA P: (800) 762-4000 or (+1) 203-925-4602 www.perkinelmer.com For a complete listing of our global offices, visit www.perkinelmer.com/ContactUs Copyright ©2012-2014, PerkinElmer, Inc. All rights reserved. PerkinElmer® is a registered trademark of PerkinElmer, Inc. All other trademarks are the property of their respective owners. 010280A_01