New TSOP382../TSOP384.. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP38#.. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an IR filter. The demodulated output signal can be directly decoded by a microprocessor. The TSOP382.. is compatible with all common IR remote control data formats. The TSOP384.. is optimized to suppress almost all spurious pulses from energy saving fluorescent lamps but will also suppress some data signals. This component has not been qualified according to automotive specifications. 19026 Mechanical Data Pinning: 1 = OUT, 2 = GND, 3 = VS Product Matrix Features • Very low supply current • Photo detector and preamplifier in one package e3 • Internal filter for PCM frequency • Improved shielding against EMI • Supply voltage: 2.5 V to 5.5 V • Improved immunity against ambient light • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Insensitive to supply voltage ripple and noise Block Diagram Standard applications Very noisy enviroments TSOP382.. TSOP384.. Parts Table Part Carrier Frequency TSOP38#30 30 kHz TSOP38#33 33 kHz TSOP38#36 36 kHz TSOP38#38 38 kHz TSOP38#40 40 kHz TSOP38#56 56 kHz Application Circuit 16833 19267 3 30 kΩ VS IR Transmitter with TSALxxxx TSOP.... 1 Input AGC Band Pass Demodulator OUT VS OUT µC Circuit VO 2 PIN Control Circuit GND GND No external components are required Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 1 New TSOP382../TSOP384.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Supply voltage Parameter (Pin 3) Test condition VS - 0.3 to + 6.0 Unit V Supply current (Pin 3) IS 3 mA Output voltage (Pin 1) VO - 0.3 to (VS + 0.3) V Output current (Pin 1) IO 5 mA Tj 100 °C Storage temperature range Tstg - 25 to + 85 °C Operating temperature range Tamb - 25 to + 85 °C Junction temperature Power consumption (Tamb ≤ 85 °C) Ptot 10 mW Soldering temperature t ≤ 10 s, 1 mm from case Tsd 260 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Supply current (Pin 3) Symbol Min Ev = 0, VS = 3.3 V ISD 0.27 Ev = 40 klx, sunlight ISH Max Unit 0.35 0.45 mA 0.45 VS Supply voltage Typ. mA 2.5 Transmission distance Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA Output voltage low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max Directivity Angle of half transmission distance 5.5 d 45 V m 0.15 100 mV 0.35 mW/m2 W/m2 30 ϕ1/2 ± 45 deg Typical Characteristics Tamb = 25 °C, unless otherwise specified 1 Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * * tpi VO T 10/fo is recommended for optimal function Output Signal 1) 2) VOH 16110 7/f0 < td < 15/f0 tpi - 5/f 0 < tpo < tpi + 6/f 0 Output Pulse Width 0.9 0.8 Input Burst Length 0.7 0.6 0.5 0.4 0.3 λ = 950 nm, optical test signal, fig.1 0.2 0.1 0 VOL td1 ) tpo2 ) Figure 1. Output Active Low www.vishay.com 2 tpo - Output Pulse Width (ms) Ee 0.1 t 20752 1 10 100 1000 10000 100000 Ee - Irradiance (mW/m²) Figure 2. Pulse Length and Sensitivity in Dark Ambient Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors 600 µs t 600 µs T = 60 ms 94 8134 Output Signal, (see fig. 4) VO VOH VOL 4 Correlation with ambient light sources: 3.5 10 W/m² = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m² = 8.2 kLx (Daylight, T = 5900 K) 3 Wavelength of ambient illumination: λ = 950 nm 2.5 2 1.5 1 0.5 0 0.01 t Toff Ton Eemin - Threshold Irradiance (mW/m²) Optical Test Signal Ee Ee min - Threshold Irradiance (mW/m²) Ton, Toff - Output Pulse Width (ms) 0.8 Ton 0.6 0.5 Toff 0.4 0.3 0.2 0.1 λ = 950 nm, optical test signal, fig. 3 10 100 1 f = 100 Hz 0.9 0.8 f = 10 kHz 0.7 0.6 f = 20 kHz 0.5 0.4 f = 30 kHz 0.3 f = fo 0.2 0.1 0 0 0.1 1 20759 10 100 1000 10000 Ee - Irradiance (mW/m²) 1 10 100 1000 VsRMS - AC Voltage on DC Supply Voltage (mV) 20753 Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 4. Output Pulse Diagram 500 E - Max. Field Strength (V/m) 1.2 E e min /E e - Rel. Responsivity 1 Figure 6. Sensitivity in Bright Ambient Figure 3. Output Function 0.7 0.1 Ee - Ambient DC Irradiance (W/m²) 20757 1.0 0.8 0.6 0.4 f = f0 ± 5 % f (3 dB) = f0 /10 0.2 450 400 350 300 250 200 150 100 50 0 0.0 0.7 16925 0.9 1.1 1.3 f/f0 - Relative Frequency Figure 5. Frequency Dependence of Responsivity Document Number 81733 Rev. 1.0, 08-Aug-07 0 20747 500 1000 1500 2000 2500 3000 f - EMI Frequency (MHz) Figure 8. Sensitivity vs. Electric Field Disturbances www.vishay.com 3 New TSOP382../TSOP384.. Vishay Semiconductors 0° 1 10° 20° 30° Max. Envelope Duty Cycle 0.9 0.8 0.7 40° 1.0 0.6 0.5 0.4 TSOP382.. 0.3 TSOP384.. 0.2 0.9 50° 0.8 60° 70° 0.7 80° 0.1 f = 38 kHz, Ee = 2 mW/m² 0 0 20754 20 40 60 80 100 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance 120 19258 Burst Length (number of cycles/burst) Ee min - Threshold Irradiance (mW/m²) Figure 9. Max. Envelope Duty Cycle vs. Burst Length Figure 12. Horizontal Directivity 0° 0.3 0.25 40° 0.2 1.0 0.15 0.9 50° 0.1 0.8 60° 0.05 0.7 - 30 70° 80° - 10 10 30 50 70 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance 90 19259 Tamb - Ambient Temperature (°C) 20755 Figure 10. Sensitivity vs. Ambient Temperature Figure 13. Vertical Directivity 0.2 1.2 0.18 Ee min - Sensitivity (mW/m²) S ( λ) rel - Relative Spectral Sensitivity 20° 30° 0 1.0 0.8 0.6 0.4 0.2 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.0 750 16919 0 850 950 1050 www.vishay.com 2 1150 λ - Wavelength (nm) Figure 11. Relative Spectral Sensitivity vs. Wavelength 4 10° 20756 2.5 3 3.5 4 4.5 5 5.5 6 Vs - Supply Voltage (V) Figure 14. Sensitivity vs. Supply Voltage Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors IR Signal from fluorescent lamp with low modulation 5 0 10 15 20 Time (ms) 16920 Figure 15. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal The TSOP38#.. series is designed to suppress spurious output pulses due to noise or disturbance signals. Data and disturbance signals can be distinguished by the devices according to carrier frequency, burst length and envelope duty cycle. The data signal should be close to the band-pass center frequency (e.g. 38 kHz) and fulfill the conditions in the table below. When a data signal is applied to the TSOP38#.. in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. Some examples of disturbance signals which are suppressed are: • DC light (e.g. from tungsten bulb or sunlight) • Continuous signals at any frequency • Strongly or weakly modulated noise from fluorescent lamps with electronic ballasts (see figure 15 or figure 16). IR Signal Suitable Data Format 0 10 16921 10 15 20 Time (ms) Figure 16. IR Signal from Fluorescent Lamp with high Modulation TSOP382.. TSOP384.. Minimum burst length 10 cycles/burst 10 cycles/burst After each burst of length A gap time is required of 10 to 70 cycles 10 cycles 10 to 35 cycles 10 cycles For bursts greater than A gap time in the data stream is needed of 70 cycles > 4 x burst length 35 cycles > 10 x burst length Maximum continuous short bursts/second 1800 1500 Compatible to NEC code yes yes Compatible to RC5/RC6 code yes yes Compatible to Sony code yes no Compatible to Thomson 56 kHz code yes yes Compatible to Mitsubishi code(38 kHz, preburst 8 ms, 16 bit) yes no Compatible to Sharp code yes yes Most common disturbance signals are suppressed Even extreme disturbance signals are suppressed Suppression of interference from fluorescent lamps For data formats with short bursts please see the data sheet for TSOP381../TSOP383.. Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 5 New TSOP382../TSOP384.. Vishay Semiconductors Package Dimensions in millimeters 19009 www.vishay.com 6 Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1