Datasheet Download

Headphone Amplifiers
Coupling Capacitorless
Headphone Amplifiers
No.11102EAT04
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Description
BD88xxxGUL is output coupling capacitorless headphone amplifier. This IC has a negative voltage generator of regulated
type built-in and generates the direct regulated negative voltage from the supply voltage. It is possible to drive headphones
in a ground standard with both voltage of the positive voltage (+2.4V) and the negative voltage (-2.4V). Therefore a
large-capacity output coupling capacitor becomes needless and can reduce a cost, a board area, and the height of the part.
In addition, there is not the signal decrement by the low range to happen by output coupling capacitor and output load
impedance and can output a rich low tone.
●Features
1) 2.4V to 5.5V Single-Supply Operation
2) No Bulky DC-Blocking Capacitors Required
3) No Degradation of Low-Frequency Response Due to Output Capacitors
4) Ground-Referenced Outputs
5) Gain setting
BD88400GUL: Variable gain with external resistors
BD88410GUL: -1.0V/V
BD88415GUL: -1.5V/V
BD88420GUL: -2.0V/V
6) Low THD+N
7) Low Supply Current
8) Integrated Negative Power Supply
9) Integrated Short-Circuit and Thermal-Overload Protection
10) Small package
VCSP50L2 (2.1mm x 2.1mm)
●Applications
Mobile Phones, Smart Phones, PDAs, Portable Audio Players, PCs, TVs, Digital Cameras, Digital Video Cameras,
Electronic Dictionaries, Voice Recorders, Bluetooth Head-sets, etc
●Line up
Type
Supply Supply
Voltage Current
[V]
[mA]
Gain
[V/V]
Maximum
Output Power
[mW]
THD+N
[%]
80
0.006
Noise
Voltage
[µVrms]
PSRR
[dB]
Package
Variable gain
with external
resister
BD88400GUL
BD88410GUL
-1.0
2.4~5.5 (No2.0
signal)
BD88415GUL
-1.5
BD88420GUL
-2.0
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© 2011 ROHM Co., Ltd. All rights reserved.
(VDD=3.3V,RL=16Ω (VDD=3.3V,RL=16Ω
THD+N≦1%,f=1kHz) Po=10mW,f=1kHz)
1/21
10
-80
VCSP50L2
(f=217Hz)
(2.1mm x 2.1mm)
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Absolute maximum ratings
Parameter
Symbol
Ratings
Unit
SGND to PGND voltage
VGG
0.0
V
SVDD to PVDD voltage
VDD
-0.3~0.3
V
SVSS to PVSS voltage
VSS
0.0
V
SGND or PGND to SVDD, PVDD voltage
VDG
-0.3~6.0
V
SVSS, PVSS to SGND or PGND voltage
VSG
-3.5~0.3
V
SGND to IN_- voltage
VIN
(SVSS-0.3)~2.8
V
SGND to OUT_- voltage
VOUT
(SVSS-0.3)~2.8
V
PGND to C1P- voltage
VC1P
(PGND-0.3)~(PVDD+0.3)
V
PGND to C1N- voltage
VC1N
(PVSS-0.3)~(PGND+0.3)
V
SGND to SHDN_B- voltage
VSH
(SGND-0.3)~(SVDD+0.3)
V
Input current
IIN
-10~10
mA
Power Dissipation
PD
1350 *
mW
TSTG
-55~150
℃
Storage Temperature Range
*
In operating over 25 ℃, de-rate the value to 10.8mW/℃. This value is for mounted on the application board
(Grass-epoxy, size: 40mm x 60mm, H=1.6mm, Top Copper area = 79.9%, Bottom Copper area = 80.2%).
●Operating conditions
Parameter
Supply Voltage Range
Operating Temperature Range
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© 2011 ROHM Co., Ltd. All rights reserved.
Ratings
Symbol
Unit
Min.
Typ.
Max.
VSVDD,VPVDD
2.4
-
5.5
V
TOPR
-40
-
+85
℃
2/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristics
Unless otherwise specified, Ta=25℃, SVDD=PVDD=3.3V, SGND=PGND=0V, SHDNB=SVDD, C1=C2=2.2µF,
RL=No Load, Ri=Rf=10kΩ
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Supply Current
Shutdown Supply Current
IST
-
0.1
2
µA
IDD1
-
1.3
-
mA
IDD2
-
2.0
7.4
mA
H Level Input Voltage
VIH
1.95
-
-
V
L Level Input Voltage
VIL
-
-
0.70
V
ILEAK
-
-
±1
µA
Shutdown to Full Operation
tSON
-
80
-
µs
Offset Voltage
VIS
-
±0.5
±5.0
mV
30
60
-
mW
40
80
-
mW
-
0.008
0.056
%
-
0.006
0.100
%
10
14
19
kΩ
-
-1.00
-
-1.05
-1.00
-0.95
Quiescent Supply Current
SHDNLB=SHDNRB=L
(SHDNLB,SHDNRB)=(H,L) or (L,H),
No signal
SHDNLB=SHDNRB=H,
No signal
SHDN_B Terminal
Input Leak Current
Headphone Amplifier
Maximum Output Power
Total Harmonic Distortion
+ Noise
POUT
THD+N
Input Impedance
ZIN
BD88400GUL
BD88410GUL
Gain
AV
V/V
BD88415GUL
-1.55
-1.50
-1.45
BD88420GUL
-2.06
-2.00
-1.94
ΔAV
-
1
-
%
Noise
VN
-
10
-
µVrms
Slew Rate
SR
-
0.15
-
V/µs
Maximum Capacitive Load
CL
-
200
-
pF
Crosstalk
CT
-
-90
-
dB
PSRR
-
-80
-
dB
Charge-Pump
Oscillator Frequency
fOSC
200
300
430
kHz
Thermal-Shutdown Threshold
TSD
-
145
-
℃
Thermal-Shutdown Hysteresis
THYS
-
5
-
℃
Gain match
Power Supply
Rejection Ratio
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© 2011 ROHM Co., Ltd. All rights reserved.
3/21
SHDNLB=SHDNRB=L→H
RL=32Ω, THD+N≦-40dB, f=1kHz,
20kHz LPF, for Single Channel
RL=16Ω, THD+N≦-40dB, f=1kHz,
20kHz LPF, for Single Channel
RL=32Ω, POUT=10mW, f=1kHz,
20kHz LPF
RL=16Ω, POUT=10mW, f=1kHz,
20kHz LPF
SHDNLB=SHDNRB=H
In BD88400GUL, ZIN = Ri
In BD88400GUL, Gain is variable
by the external resister of Ri and Rf.
20kHz LPF + JIS-A
RL=32Ω, f=1kHz, VOUT=200mVP-P,
1kHz BPF
f=217Hz, 100mVP-P‐ripple,
217Hz BPF
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – General Items (Reference data)
Unless otherwise specified, Ta=25℃, SGND=PGND=0V, SHDNLB=SHDNRB=SVDD, C1=C2=2.2µF,
Input coupling capacitor=1µF, RL=No Load
* In BD88400GUL the input resister(Ri)=10kΩ, feedback resister(Rf)=10kΩ.
4.0
1u
4.0
100n
10n
1n
0.1n
0.0
* This caracteristics has
hysteresis (40mV typ) by
UVLO.
3.0
2.0
1.0
0.0
1.0
2.0
3.0
4.0
5.0
1.0
2.0
* This caracteristics has
hysteresis (40mV typ) by
UVLO.
3.0
2.0
1.0
3.0
4.0
5.0
6.0
0.0
1.0
Supply Voltage [V]
Supply Voltage [V]
Setup time [us]
-2
140
120
100
80
60
40
-2.5
80
60
RL=32Ω, in phase
40
RL=32Ω, out of phase
THD+N≦-40dB
20kHz LPF
Stereo
20
0
0
2.0
2.5
3.0 3.5
4.0 4.5
5.0 5.5
2.0
6.0
2.5
3.0 3.5
Supply Voltage [V]
2.0
6.0
-20
-40
-50
-60
-40
-50
-60
-70
-70
-70
-80
-80
-80
-90
-90
-90
-100
-100
-100
10
100
1k
10k
10
100k
100
1k
10k
100k
10
-20
-30
PSRR [dB]
-30
-40
-50
-60
-20
-30
-40
-50
-60
-40
-50
-60
-70
-70
-80
-80
-80
-90
-90
-90
-100
-100
-100
100
1k
10k
100k
Frequency [Hz]
Fig.10 Crosstalk vs.
Frequency (VDD=2.4V)
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© 2011 ROHM Co., Ltd. All rights reserved.
10
100
1k
10k
Frequency [Hz]
Fig.11 Crosstalk vs.
Frequency (VDD=3.3V)
4/21
VDD=5.5V
VOUT = 200mVp-p
RL=32Ω
BPF
-10
-70
10
100k
0
VDD=3.3V
VOUT = 200mVp-p
RL=32Ω
BPF
-10
PSRR [dB]
-20
10k
Frequency [Hz]
0
VDD=2.4V
VOUT = 200mVp-p
RL=32Ω
BPF
1k
Fig.9 PSRR vs. Frequency
(VDD=5.5V)
Fig.8 PSRR vs. Frequency
(VDD=3.3V)
0
-10
100
Frequency [Hz]
Frequency [Hz]
Fig.7 PSRR vs. Frequency
(VDD=2.4V)
6.0
-30
PSRR [dB]
PSRR [dB]
-60
5.0 5.5
VDD=5.5V
Ripple = 100mVp-p
BPF
-10
-30
-50
4.0 4.5
0
-20
-40
3.0 3.5
Supply Voltage [V]
VDD=3.3V
Ripple = 100mVp-p
BPF
-10
-30
2.5
Fig.6 Maximum power vs.
Supply Voltage
0
VDD=2.4V
Ripple = 100mVp-p
BPF
-20
PSRR [dB]
5.0 5.5
Fig.5 Setup time vs.
Supply Voltage
0
PSRR [dB]
4.0 4.5
Supply Voltage [V]
Fig.4 Negative Voltage vs.
Supply Voltage
-10
6.0
RL=16Ω, out of phase
100
20
-3
5.0
RL=16Ω, in phase
Maximum Output Power [mW]
160
-1.5
4.0
120
SHDNLB=SHDNRB
=L->H
VSS 90% Setup time
No Load
180
-1
3.0
Fig.3 Stereo Operating
Current vs. Supply voltage
200
SHDNLB=VDD
SHDNRB=VDD
No Load
2.0
Supply Voltage [V]
Fig.2 Monaural Operating
Current vs. Supply Voltage
0
-0.5
SHDNLB=VDD
SHDNRB=VDD
0.0
0.0
6.0
Fig.1 Standby Current vs.
Supply Voltage
VSS Voltage [V]
Operating Current [mA]
SHDNLB=VDD
SHDNRB=0V
Operating Current [mA]
Standby Current [A]
SHDNLB=0V
SHDNRB=0V
100k
10
100
1k
10k
100k
Frequency [Hz]
Fig.12 Crosstalk vs.
Frequency (VDD=5.5V)
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – BD88415GUL (Reference data)
-20
Output Voltage [dBV]
-40
RL=16Ω
-60
-80
-40
RL=16Ω
-60
-80
-120
-120
-100
-80
-60
-40
-20
-120
-120
0
10
8
8
RL=16Ω
6
-100
-80
-60
-80
-40
-20
-120
-120
0
VDD=2.4V
Po=10mW
RL=16Ω
Input coupling
capacitor = 1.0uF
-4
-6
-8
100
RL=32Ω
-2
VDD=3.3V
Po=10mW
RL=16Ω
Input coupling
capacitor = 1.0uF
-4
-6
-8
1k
10k
2
10
100
-6
-8
10k
100k
10
10
0.01
THD+N [%]
10
THD+N [%]
10
1
In phase
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16 Ω
0.01
Out of phase
1n
100n
10u
1m
1n
100m
100n
1
0.1
Out of phase
10u
1m
1n
100m
10
10
THD+N [%]
10
0.1
VDD=2.4V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
0.01
In phase
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32 Ω
0.01
Out of phase
1n
100n
10u
1m
100m
Output Power [W]
Fig.22 THD+N vs. Output
Power (VDD=2.4V, RL=32Ω)
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© 2011 ROHM Co., Ltd. All rights reserved.
1
1m
100m
In phase
0.1
VDD=5.5V
20kHz-LPF
f=1kHz
Stereo
RL=32 Ω
0.01
Out of phase
Out of phase
0.001
0.001
0.001
10u
Fig.21 THD+N vs. Output
Power (VDD=5.5V, RL=16Ω)
100
1
100n
Output Power [W]
Fig.20 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
100
In phase
Out of phase
0.001
100
1
VDD=5.5V
20kHz-LPF
f=1kHz
Stereo
RL=16 Ω
Output Power [W]
Output Power [W]
Fig.19 THD+N vs. Output
Power (VDD=2.4V, RL=16Ω)
100k
In phase
0.01
0.001
0.001
10k
Frequency [Hz]
100
In phase
1k
Fig.18 Gain vs. Frequency
(VDD=5.5V)
100
VDD=2.4V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
100
Frequency [Hz]
Fig.17 Gain vs. Frequency
(VDD=3.3V)
100
0.1
VDD=5.5V
Po=10mW
RL=16Ω
Input coupling
capacitor = 1.0uF
-4
1k
Frequency [Hz]
1
RL=32Ω
0
-2
-10
100k
Fig.16 Gain vs. Frequency
(VDD=2.4V)
0
RL=16Ω
6
-10
10
-20
4
0
-10
-40
8
RL=16Ω
Gain [dB]
-2
-60
Fig.15 Output Voltage vs.
Input Voltage (VDD=5.5V)
2
Gain [dB]
RL=32Ω
0
-80
Input Voltage [dBV]
4
2
-100
10
6
4
Gain [dB]
RL=16Ω
-60
Fig.14 Output Voltage vs.
Input Voltage (VDD=3.3V)
Fig.13 Output Voltage vs.
Input Voltage (VDD=2.4V)
THD+N [%]
-40
Input Voltage [dBV]
10
RL=32Ω
-100
Input Voltage [dBV]
THD+N [%]
-20
-100
-100
VDD=5.5V
f=1kHz
BPF
0
RL=32Ω
THD+N [%]
Output Voltage [dBV]
-20
VDD=3.3V
f=1kHz
BPF
0
RL=32Ω
Output Voltage [dBV]
VDD=2.4V
f=1kHz
BPF
0
1n
100n
10u
1m
100m
Output Power [W]
Fig.23 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
5/21
1n
100n
10u
1m
100m
Output Power [W]
Fig.24 THD+N vs. Output
Power (VDD=5.5V, RL=32Ω)
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – BD88415GUL (Reference data) – Continued
100
VDD=2.4V
RL=16 Ω
20kHz-LPF
Stereo (in phase)
1
10
THD+N [%]
Po=0.1mW
Po=1mW
0.1
1
Po=0.1mW
Po=1mW
0.1
0.01
0.01
Po=10mW
0.001
10
100
1k
Po=10mW
10
100k
100
Frequency [Hz]
Po=0.1mW
Po=10mW
Po=1mW
10
100
1k
Po=1mW
100
1k
10k
0.1
10
Spectrum [dBV]
-80
-40
-60
-80
-40
-60
-80
-120
-120
-120
-140
100k
Frequency [Hz]
Fig.31 Noise Spectrum
(VDD=2.4V)
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© 2011 ROHM Co., Ltd. All rights reserved.
100k
VDD=5.5V
Input connect
to the ground
with 1uF
-20
-100
10k
10k
0
VDD=3.3V
Input connect
to the ground
with 1uF
-100
-140
1k
Fig. 30 THD+N vs. Frequency
(VDD=5.5V, RL=32Ω)
-100
1k
100
Frequency [Hz]
Fig. 29 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
-20
-60
100
Po=1mW
0.001
100k
0
VDD=2.4V
Input connect
to the ground
with 1uF
10
Po=0.1mW
Po=10mW
Frequency [Hz]
Frequency [Hz]
-40
1
0.01
10
0
100k
VDD=5.5V
RL=32Ω
20kHz-LPF
Stereo (in phase)
10
Po=10mW
0.1
100k
10k
Frequency [Hz]
Po=0.1mW
0.001
10k
1k
100
1
Fig. 28 THD+N vs. Frequency
(VDD=2.4V, RL=32Ω)
-20
100
Fig. 27 THD+N vs. Frequency
(VDD=5.5V, RL=16Ω)
0.01
0.001
Po=10mW
10
100k
THD+N [%]
THD+N [%]
THD+N [%]
10k
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
10
0.01
Spectrum [dBV]
1k
100
VDD=2.4V
RL=32 Ω
20kHz-LPF
Stereo (in phase)
0.1
0.1
Frequency [Hz]
100
1
Po=0.1mW
Po=1mW
0.001
Fig. 26 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
Fig.25 THD+N vs. Frequency
(VDD=2.4V, RL=16Ω)
10
1
0.01
0.001
10k
VDD=5.5V
RL=16Ω
20kHz-LPF
Stereo (in phase)
10
Spectrum [dBV]
THD+N [%]
10
100
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
THD+N [%]
100
-140
10
100
1k
10k
Frequency [Hz]
Fig.32 Noise Spectrum
(VDD=3.3V)
6/21
100k
10
100
1k
10k
100k
Frequency [Hz]
Fig.33 Noise Spectrum
(VDD=5.5V)
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – BD88400GUL (Reference data)
100
10
VDD=3.3V
f=1kHz
BPF
-20
RL=32Ω
VDD=3.3V, Po=10mW
Ri=10kΩ, Input coupling
capacitor = 1.0uF
8
6
10
4
RL=16Ω
-60
RL=16Ω
2
THD+N [%]
-40
Gain [dB]
Output Voltage [dBV]
0
0
-2
-80
RL=32Ω
In phase
1
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
-4
0.01
-6
-100
-8
-120
-120
-100
-80
-60
-40
-20
10
0
100
Input Voltage [dBV]
10k
1n
100k
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
0.01
1
Po=0.1mW
Po=1mW
0.1
Out of phase
100n
10u
1m
100m
Output Power [W]
10
100
1k
10k
Frequency [Hz]
Fig. 37 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
Po=0.1mW
Po=1mW
0.1
Po=10mW
Po=10mW
0.001
1n
1
0.01
0.01
0.001
100m
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
10
THD+N [%]
THD+N [%]
In phase
1m
100
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
10
1
10u
Output Power [W]
100
10
100n
Fig.36 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
Fig.35 Gain vs. Frequency
(VDD=3.3V)
100
THD+N [%]
1k
Frequency [Hz]
Fig.34 Output Voltage vs.
Input Voltage (VDD=3.3V)
Out of phase
0.001
-10
Fig.38 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
0.001
100k
10
100
1k
10k
100k
Frequency [Hz]
Fig. 39 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0
VDD=3.3V
Input connect
to the ground
with 1uF
Spectrum [dBV]
-20
-40
-60
-80
-100
-120
-140
10
100
1k
10k
100k
Frequency [Hz]
Fig.40 Noise Spectrum
(VDD=3.3V)
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7/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – BD88410GUL (Reference data)
100
10
VDD=3.3V
Po=10mW
Input coupling
capacitor = 1.0uF
8
6
4
-40
Gain [dB]
Output Voltage [dBV]
-20
RL=32Ω
RL=16Ω
-60
-80
10
RL=16Ω
2
THD+N [%]
VDD=3.3V
f=1kHz
BPF
0
0
-2
RL=32Ω
In phase
1
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
-4
0.01
-6
-100
-8
-120
-120
-100
-80
-60
-40
-20
10
0
100
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
1n
1
Po=1mW
0.1
100m
Output Power [W]
Po=10mW
Po=1mW
0.1
Po=0.1mW
10
100
1k
10k
Po=10mW
0.001
100k
Frequency [Hz]
Fig.45 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
Fig. 44 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
1
0.01
0.001
1m
100m
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
10
Po=0.1mW
Out of phase
10u
1m
100
0.01
100n
10u
Output Power [W]
THD+N [%]
THD+N [%]
THD+N [%]
In phase
100n
Fig.43 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
10
1
0.001
1n
100k
100
10
0.01
10k
Fig.42 Gain vs. Frequency
(VDD=3.3V)
100
0.1
1k
Frequency [Hz]
Input Voltage [dBV]
Fig.41 Output Voltage vs.
Input Voltage (VDD=3.3V)
Out of phase
0.001
-10
10
100
1k
10k
100k
Frequency [Hz]
Fig. 46 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0
VDD=3.3V
Input connect
to the ground
with 1uF
Spectrum [dBV]
-20
-40
-60
-80
-100
-120
-140
10
100
1k
10k
100k
Frequency [Hz]
Fig.47 Noise Spectrum
(VDD=3.3V)
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8/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Electrical characteristic curves – BD88420GUL (Reference data)
10
VDD=3.3V
f=1kHz
BPF
-20
RL=32Ω
100
RL=16Ω
8
6
10
4
RL=16Ω
-60
-80
RL=32Ω
2
0
-2
VDD=3.3V
Po=10mW
Input coupling
capacitor = 1.0uF
-4
-6
-100
-8
-120
-120
-100
-80
-60
-40
-20
100
1k
10k
100k
1n
0.01
0.001
1n
100n
1
Po=0.1mW
Po=1mW
0.1
0.01
Po=10mW
0.001
1m
100m
10
100
1k
10k
1
Po=1mW
0.1
Po=0.1mW
Po=10mW
0.001
100k
Frequency [Hz]
Output Power [W]
Fig. 51 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
100m
0.01
Out of phase
10u
1m
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
10
THD+N [%]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
10u
100
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
10
In phase
100n
Fig.50 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
100
10
Out of phase
Output Power [W]
Fig.49 Gain vs. Frequency
(VDD=3.3V)
100
0.1
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
Frequency [Hz]
Input Voltage [dBV]
1
0.1
0.001
10
0
In phase
1
0.01
-10
Fig.48 Output Voltage vs.
Input Voltage (VDD=3.3V)
THD+N [%]
THD+N [%]
-40
Gain [dB]
Output Voltage [dBV]
0
Fig.52 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
10
100
1k
10k
100k
Frequency [Hz]
Fig. 53 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0
VDD=3.3V
Input connect
to the ground
with 1uF
Spectrum [dBV]
-20
-40
-60
-80
-100
-120
-140
10
100
1k
10k
100k
Frequency [Hz]
Fig.54 Noise Spectrum
(VDD=3.3V)
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© 2011 ROHM Co., Ltd. All rights reserved.
9/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Pin Arrangement
D
●Pin Function
Ball
Pin name
Matrix
A1
INR
1
2
3
4
SVDD
OUTL
SVSS
PVSS
C
INL
OUTR
C1N
B
SHDNRB
SHDNLB
PGND
A
INR
SGND
PVDD
(Bottom View)
C1P
Function
Symbol
Headphone Amplifier (Rch) input
C
A2
SGND
Ground for Headphone Amplifier
-
A3
PVDD
Positive Power Supply for Charge Pump
-
A4
C1P
Flying Capacitor (CF) Positive
A
B1
SHDNRB
Headphone Amplifier (Rch) Shutdown Control (H:active, L:shutdown)
E
B2
SHDNLB
Headphone Amplifier (Lch) Shutdown Control (H:active, L:shutdown)
E
B4
PGND
Ground for Charge Pump
-
C1
INL
C2
OUTR
Headphone Amplifier (Lch) input
C
Headphone Amplifier (Rch) output
D
C4
C1N
Flying Capacitor (CF) Negative
B
D1
SVDD
Ground for Headphone Amplifier
-
D2
OUTL
Headphone Amplifier (Lch) output
D
D3
SVSS
Negative Supply Voltage for Signal
-
D4
PVSS
Negative Supply Voltage output
F
●Pin equivalent circuit
PGND PGND
PVDD PVDD
SVDD
B
PGND PGND
PAD
+
A
-
PAD
PAD
C
PVSS PVSS
SVDD
SVSS
SVDD
PGND PGND
PAD
PAD
PAD
+
D
SVSS
E
SGND
F
Fig.55 Pin equivalent circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
10/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
INL
B1
SHDNLB
SHDNRB
●Block Diagram
B2
C1
SVDD
SVDD
D1
Rfb
Rin
PVDD
A3
SVDD
OUTL
-
D2
C1P
+
A4
SVSS
SGND
SVDD
PGND
B4
SVDD
CHARGE
PUMP
UVLO/
SHUTDOWN
CONTROL
C1N
C4
PVSS
PVDD
SGND
SVSS
SVDD
CHARGE
PUMP
CONTROL
SHORT
PROTECTION
TSD
OUTR
+
CLOCK
GENERATOR
C2
-
D4
SVDD
Rin
SVSS
SVSS
SGND
A2
INR
SGND
Rfb
D3
A1
Type
Rin
Rfb
BD88400GUL
[email protected]
Open
BD88410GUL
[email protected]
[email protected]
BD88415GUL
[email protected]
[email protected]
BD88420GUL
[email protected]
[email protected]
Fig.56 Block Diagram
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11/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Functional descriptions
The conventional headphone amplifier composition is occupied to Fig.57. In this composition, the signal is output by using
the middle point bias circuit based on the middle point bias. Therefore, the output coupling capacitor that removes the DC
voltage difference and does the AC coupling is necessary. This coupling capacitor and the impedance of the headphone
composes the high-pass filter. Therefore, the signal degradation in the low frequency region learns by experience. The
output coupling capacitor should be a large capacity, because the cutoff frequency of this high-pass filter becomes the
following formula (1).
1
fc 
(1)
2πRLCC
* Cc is the coupling capacitor, and RL is the impedance of the headphone.
Moreover, POP noise by the middle point bias start-up is generated and the degradation of PSRR learns by experience.
VDD
Cc
+
Vhp
VDD
Vout [V]
+
Vout
Input
VDD/2
0
time [s]
Vhp [V]
GND
Middle Point
BiasCircuit
0
time [s]
Fig.57 Conventional headphone amplifier composition
The composition of the series of BD884xxGUL is occupied to Fig.58. In this composition, the signal is output by using a
negative voltage based on the ground level. Therefore, the amplifier output can be connected directly with the headphone.
And, the output coupling capacitor becomes unnecessary. Additionally, the signal degradation in the low frequency region
with the coupling capacitor is not generated, and the deep bass is achieved.
Moreover, POP noise is controlled because of no middle point bias start-up. And, the degradation of PSRR doesn't occur by
being based on the ground.
Vout
Input
+
CF : Flying
Capacitor
VDD
Vout [V]
HPVDD
Vhp
HPVDD
0
time [s]
Charge
Pump
Vhp [V]
VSS
CH : Hold
Capacitor
0
time [s]
Fig.58 Composition of the series of BD884xxGUL
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12/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
[CHARGE PUMP / CHARGE PUMP CONTROL]
The negative power supply circuit is composed of the regulated charge-pump. This circuit outputs the regulated negative
voltage (PVSS) directly from power-supply voltage (PVDD). Therefore, it doesn't depend on the power-supply voltage, and
a constant voltage is output ([email protected], refer to Fig.4). Moreover, there is not swinging of the power supply by the
output current of the headphone amplifier, and it doesn't influence the headphone amplifier characteristic.
0
Ta=25℃
VDD=3.3V
SHDN_B=SVDD
CF=CH=2.2uF
VSS Voltage [V]
-0.5
-1
-1.5
-2
-2.5
-3
0
20
40
60
80
Load Current [mA]
Fig.59 Characteristics of load current regulation of PVSS (Reference data)
・Power control
The power control is a logical sum of SHDNLB and SHDNRB. The negative power supply circuit starts when H level is
input to either of SHDNLB or SHDNRB, and power is downed at the SHDNLB=SHDNRB=L level.
Table.1 Control of the charge pump
SHDNLB
SHDNRB
Control
L
L
Power down
L
H
Power on
H
L
Power on
H
H
Power on
・Operating Frequency
The operating frequency of the negative power supply charge pump is designed for the temperature and the voltage
dependence may decrease. The reference data (measurements) is occupied to Fig.60. Please note the interference with
the frequency in the application board.
400
380
360
Charge Pump Ocsillator Frequency [kHz]
Charge Pump Ocsillator Frequency [kHz]
400
VDD=3.3V
Measure : C1P
CF=CH=2.2uF
340
320
300
280
260
240
220
200
-50.0
0.0
50.0
380
360
340
320
300
280
260
240
220
200
2.0
100.0
Ta=25℃
Measure : C1P
CF=CH=2.2uF
3.0
4.0
5.0
6.0
Supply Voltage[V]
Ta [℃]
Fig.60 Temperature characteristic and Voltage characteristic of operating frequency (Reference data)
・The flying capacitor and the hold capacitor
The flying capacitor (CF) and the hold capacitor (CH) greatly influence the characteristic of the charge pump. Therefore,
please connect the capacitor with an excellent temperature characteristic and voltage characteristic of 2.2µF as much as
possible near IC.
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13/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
[HEADPHONE AMP]
The headphone amplifier is driven by the internal positive voltage (+2.4V) and negative voltage (SVSS, -2.4V) based on
ground (SGND). Therefore, the headphone can be connected without the output coupling capacitor. As a result, it brings the
improved low-frequency characteristic compared with the headphone of the conventional coupling capacitor type.
・Power control
L channel and R channel of the headphone amplifier can be independently controlled by SHDNLB and SHDNRB logic.
When the SVSS voltage is [email protected] or more, the headphone amplifier does not operate to protect from illegal operation.
And in addition, the overcurrent protection circuit is built in. The amplifier is shutdown when the overcurrent occurs
because of the output short-circuit etc., and IC is protected from being destroyed.
Table.2 Control of the headphone amplifier
SHDNLB
SHDNRB
L channel
L
L
Power down
R channel
Power down
L
H
Power down
Power on
H
L
Power on
Power down
H
H
Power on
Power on
[V]
SHDNxB
VDD
0
[time]
[V]
0
[time]
-1.1V
SVSS
Amprilier
Disable
Amplifier
Enable
Fig.61 Area of headphone amplifier can operate
SVSS does not have internal connection with PVSS. Please connect SVSS with PVSS on the application board.
・Input coupling capacitor
Input DC level of BD884xxGUL is 0V (SGND). The input coupling capacitor is necessary for the connection with the
signal source device. The signal decrease happens in the low frequency because of composing the high-pass filter by
this input coupling capacitor and the input impedance of BD884xxGUL.
The input impedance of BD884xxGUL is Rin ([email protected]). The cutoff frequency of this high-pass filter becomes the
following formula. (In BD88400GUL, Rin becomes external resistance Ri. )
1
fc 
(2)
2πR in C in
* Cin is the input coupling capacitor.
9.0
Rin=14kΩ
6.0
3.0
Cin=10uF
Gain [dB]
0.0
-3.0
-6.0
Cin=4.7uF
-9.0
-12.0
Cin=2.2uF
-15.0
Cin=1uF
-18.0
-21.0
1
10
100
Frequency [Hz]
Fig.62 Frequency response by the input coupling capacitor (Reference data)
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14/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
And, the degradation of THD+N happens because of the input coupling capacitor. Therefore, please consider these about
the selection of parts.
0
-10
-20
Cin=1.0uF
THD+N [dB]
-30
-40
Cin=0.47uF
BD88415GUL
VDD=3.3V
Po=10mW
RL=16Ω
20kHz LPF
-50
-60
Cin=0.22uF
-70
-80
-90
Cin=2.2uF
-100
10
100
1k
10k
100k
Frequency [Hz]
* Capacitor size: 1608
Fig.63 THD+N by the input coupling capacitor (Reference data)
Audio
Source
Vs
Vin
Rin =7.1kΩ
Cin
Vs [V]
・State of terminal when power down
The state of the terminal changes by the power control of the headphone amplifier. When it is shutdown, the input
impedance of the input terminal becomes [email protected] (In BD88400GUL, become Ri + 7.1kΩ). The time constant can be
reduced when the input coupling capacitor is charged.
The input voltage changes while charging up the input coupling capacitor. Therefore, do not operate the headphone
amplifier while charging.
Vout
VDD
Output
Bias
0
time [s]
Vin [V]
+
Output
Bias
VSS
0
time [s]
Fig.64 Input voltage transition with input coupling capacitor
This charge time constant becomes the following formula (3) by using the input coupling capacitor and the input
impedance. And the calculation value of the convergence to the wait time is indicated in Fig.65.
τ  R in C in
(3)
Convergence [%]
* [email protected]. In BD88400GUL, Rin=Ri+7.1kΩ
100
90
80
70
60
50
40
30
20
10
0
0τ
1τ
2τ
3τ
4τ
5τ
Wait time [s]
6τ
7τ
8τ
Fig.65 Wait time and convergence (Reference)
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© 2011 ROHM Co., Ltd. All rights reserved.
15/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
[UVLO / SHUTDOWN CONTROL]
BD884xxGUL has low voltage protection function (UVLO: Under Voltage Lock Out). And protect from the illegal operation of
IC by a low power supply voltage.
The detection voltage is [email protected], so it does not influence 2.4V of recommended operation voltage. UVLO controls the
whole of IC, and does both the negative power supply charge pump and the headphone amplifier in power down.
[TSD]
BD884xxGUL has overheating protection function (TSD: Thermal Shutdown). And the headphone amplifier becomes
shutdown when illegally overheating by the headphone amplifier illegally operation.
●Timming Chart
(Usually Operation)
PVDD,SVDD
SHDNLB
SHDNRB
Amp enable
PVSS,SVSS
INL,INR
OUTL
OUTR
Shutdow n
Setup
Signal output
Shutdow n
Fig.66 Usually Operation
(UVLO Operation)
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
Signal output
UVLO
Setup
Signal output
Fig.67 UVLO Operation
(TSD Operation)
Hy steresis = 5℃
Ta
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
Signal output
TSD
Signal output
Fig.68 TSD Operation
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© 2011 ROHM Co., Ltd. All rights reserved.
16/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Application Circuit
Lch Input
SHUTDOWN
Control
Cil
1.0μF
B1
B2
3.3V
C1
SVDD
SVDD
3.3V
D1
Csvdd
Rfb
Rin
1.0μF
PVDD
A3
SVDD
Cpvdd
Part
OUTL
1.0μF
D2
C1P
CF
+
A4
SVSS
SVDD
SGND
PGND
CF
2.2μF
B4
CH
SVDD
CHARGE
PUMP
UVLO/
SHUTDOWN
CONTROL
Cpvdd
SHORT
PROTECTION
TSD
CH
Csvdd
2.2μF
C1N
SGND
SVDD
PVDD
C4
CHARGE
PUMP
CONTROL
PVSS
SVSS
Cil
OUTR
+
CLOCK
GENERATOR
C2
Cir
-
D4
Function
Flying
Capacitor
Hold
Capacitor
Bypass
Capacitor
Bypass
Capacitor
Coupling
Capacitor
Coupling
Capacitor
value
2.2µF
2.2µF
1.0µF
1.0µF
1.0µF
1.0µF
Remarks
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
SVDD
Rin
Rfb
SVSS
SVSS
SGND
D3
A1
A2
Cir
1.0μF
Rch Input
INL
SHDNLB
SHDNRB
Fig.69 BD88410GU/BD88415GUL/BD88420GUL application circuit
Part
CF
CH
Cpvdd
Csvdd
Cil
Cir
Ri
value
2.2µF
2.2µF
1.0µF
1.0µF
1.0µF
1.0µF
10kΩ
10kΩ
Remarks
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
Temp. Characteristic:
Class-B
MCR006YZPJ103
(ROHM)
MCR006YZPJ103
(ROHM)
INR
SGND
Rf
Function
Flying
Capacitor
Hold
Capacitor
Bypass
Capacitor
Bypass
Capacitor
Coupling
Capacitor
Coupling
Capacitor
Input
Resistor
Feedback
Resistor
Fig.70 BD88400GUL application circuit
In BD88400GUL, the Pass Gain becomes the following formula (4). The Pass Gain and the resister Rf is limited by table.3.
R
Gain  f (4)
Ri
Table.3 Pass Gain and Resister Limit
Item
Min.
Typ.
Max.
Unit
Pass Gain
0.5
1.0
2.0
V/V
Rf
1.0
10
-
kΩ
Ri
-
10
-
kΩ
Ri is not limited. But, if this resister Ri is very small, the signal decrease happens in the low frequency (Refer to formula 2).
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17/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Thermal Derating Curve
The reference value of the thermal derating curve is indicated in Fig.71.
(Conditions)
This value is for mounted on the ROHM application board
Board size:40mm x 60mm x 1.6mm
Top Copper Area:79.9%
Bottom Copper Area:80.2%
Board Layout:Fig.74
1.6
1.4
Pd [W]
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Ta [℃]
Fig.71 Thermal Derating Curve
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18/21
2011.03 – Rev. A
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
Technical Note
●Notes for use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical
safety measures including the use of fuses, etc.
(2) Operating conditions
These conditions represent a range within which characteristics can be provided approximately as expected. The
electrical characteristics are guaranteed under the conditions of each parameter.
(3) Reverse connection of power supply connector
The reverse connection of power supply connector can break down ICs. Take protective measures against the
breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s
power supply terminal.
(4) Power supply line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this
regard, for the digital block power supply and the analog block power supply, even though these power supplies has
the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus
suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the
wiring patterns. For the GND line, give consideration to design the patterns in a similar manner.
Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal.
At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the
capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus
determining the constant.
(5) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.
Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric
transient.
(6) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting
can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or
between the terminal and the power supply or the GND terminal, the ICs can break down.
(7) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(8) Inspection with set PCB
On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.
Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set
PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to
the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In
addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention
to the transportation and the storage of the set PCB.
(9) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the
parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of
the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input
terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not
apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power
supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the
guaranteed value of electrical characteristics.
(10) Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of
the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(11) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(12) About the rush current
For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal
powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring,
width of GND wiring, and routing of wiring.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
19/21
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Ordering part number
B
D
8
Part No.
8
4
1
5
G
Part No.
BD88400
BD88410
BD88415
BD88420
U
L
-
Package
GUL: VCSP50L2
E
2
Packaging and formingspecification
E2: Embossed tape and reel
VCSP50L2(BD88400GUL)
<Tape and Reel information>
0.06 S
0.05 A B
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
S
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
0.30±0.05
14- φ 0.25±0.05
0.55MAX
2.10±0.05
2.10±0.05
0.1±0.05
1PIN MARK
A
(φ0.15)INDEX POST
B
C
B
P=0.5×3
D
A
1
0.30±0.05
2
3
1pin
4
P=0.5×3
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
VCSP50L2(BD88410GUL)
<Tape and Reel information>
0.06 S
0.05 A B
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
S
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
0.30±0.05
14- φ 0.25±0.05
0.55MAX
2.10±0.05
2.10±0.05
0.1±0.05
1PIN MARK
A
(φ0.15)INDEX POST
B
C
B
P=0.5×3
D
A
1
0.30±0.05
2
3
1pin
4
P=0.5×3
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
VCSP50L2(BD88415GUL)
<Tape and Reel information>
0.06 S
0.05 A B
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
S
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
0.30±0.05
14- φ 0.25±0.05
0.55MAX
2.10±0.05
2.10±0.05
0.1±0.05
1PIN MARK
A
(φ0.15)INDEX POST
B
C
B
P=0.5×3
D
A
1
0.30±0.05
2
3
1pin
4
P=0.5×3
(Unit : mm)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Reel
20/21
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2011.03 – Rev. A
Technical Note
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
VCSP50L2(BD88420GUL)
<Tape and Reel information>
0.06 S
0.05 A B
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
S
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
0.30±0.05
14- φ 0.25±0.05
0.55MAX
2.10±0.05
2.10±0.05
0.1±0.05
1PIN MARK
A
(φ0.15)INDEX POST
B
C
B
P=0.5×3
D
A
1
0.30±0.05
2
3
1pin
4
P=0.5×3
(Unit : mm)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Reel
21/21
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2011.03 – Rev. A
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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