datasheet

SK30MLI066
Absolute Maximum Ratings
Symbol Conditions
IGBT
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Units
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SEMITOP® 3
Values
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Inverse Diode
IGBT Module
SK30MLI066
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Freewheeling Diode
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Target Data
Features
!" #
$% # &'
Typical Applications*
( %) !)
*+,
Remarks
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Module
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Characteristics
Symbol Conditions
IGBT
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min.
typ.
max.
Units
2
20G
702
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101
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MLI
1
03-06-2009 DIL
© by SEMIKRON
SK30MLI066
Characteristics
Symbol Conditions
Inverse Diode (Antiparallel Diode)
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!& . (/ $C -"; . / -
-&/
SEMITOP 3
IGBT Module
typ.
max.
Units
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102
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102
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1
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$
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min.
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M . 9((2 $MF
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. 92 :
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102
-
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102
-
1
-
Freewheeling Diode (Neutral Clampo diode)
-& . -;
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SK30MLI066
-&/
<
< . 92 :
<
Target Data
Features
!" #
$% # &'
Typical Applications*
( %) !)
*+,
Remarks
- . (///- $0 10 2/3
#
4 * . !"
" 1 5 6 17 8 &
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$
F
9092
902
(/
5
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
MLI
2
03-06-2009 DIL
© by SEMIKRON
SK30MLI066
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
03-06-2009 DIL
© by SEMIKRON
SK30MLI066
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
Antiparallel Diode (D1)
4
03-06-2009 DIL
© by SEMIKRON
SK30MLI066
UL recognized
file no. E 63 532
>7 , 0 +0 4 9
>7
5
A%!
03-06-2009 DIL
© by SEMIKRON