VESD15A1-HD1 www.vishay.com Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD-protection 1 2 • Low leakage current < 0.01 μA • Low load capacitance CD = 45 pF (VR = 0 V; f = 1 MHz) 20856 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 20855 MARKING (example only) • High surge current acc. IEC61000-4-5 IPP > 6 A • Soldering can be checked by standard vision inspection. No X-ray necessary XY • Pin plating NiPdAu (e4) no whisker growth 21121 • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Bar = cathode marking X = date code Y = type code (see table below) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY VESD15A1-HD1 VESD15A1-HD1-G4-08 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD15A1-HD1 LLP1006-2L W 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS RATINGS VESD15A1-HD1 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 6 A Acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 150 W ± 30 kV ± 30 kV TJ -40 to +125 °C Tstg -55 to +150 °C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Rev. 1.2, 04-Feb-16 Document Number: 82724 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD15A1-HD1 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD15A1-HD1 (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of line which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 0.1 μA VR Reverse current at VR = 15 V Reverse breakdown voltage at IR = 1 mA at IPP = 1 A Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance Clamping voltage Dynamic resistance MAX. UNIT - 1 lines - 15 V 15 - - V IR - < 0.01 0.1 μA VBR 15.5 16 17 V VC - 18 20 V at IPP = IPPM = 6 A VC - 24 27 V at IPP = 0.2 A VF - 0.85 1.2 V V at IPP = 1 A VF - 1.1 1.3 at IPP = IPPM = 6 A VF - 2.0 2.5 V at VR = 0 V; f = 1 MHz CD - 45 50 pF at VR = 7.5 V; f = 1 MHz CD - 18 - pF Transmission line pulse (TLP), tp = 100 ns ITLP = 8 A VC-TLP - 19 - V Transmission line pulse (TLP), tp = 100 ns ITLP = 16 A VC-TLP - 20.5 - V Transmission line pulse (TLP), tp = 100 ns RDYN - 0.27 - BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD15A1-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD15A1-HD1 clamping behavior is bidirectional and asymmetrical (BiAs). 2 L1 1 BiAs Ground Rev. 1.2, 04-Feb-16 20925 Document Number: 82724 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD15A1-HD1 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 120 % Rise time = 0.7 ns to 1 ns 80 % 10 IF (mA) 100 Discharge Current IESD 100 % 60 % 53 % 1 40 % 0.1 27 % 0.01 20 % 0.001 0.5 0% -10 0 10 20 30 40 50 60 70 80 90 100 0.6 0.7 0.8 1 0.9 VF (V) Time (ns) 20557 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 18 8 µs to 100 % 100 % 16 14 80 % VR (V) 12 IPPM 60 % 20 µs to 50 % 40 % 10 8 6 4 20 % 2 0 0.01 0% 0 10 20 30 40 1 10 100 1000 10 000 IR (µA) Time (µs) 20548 Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR 30 50 f = 1 MHz 45 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 25 40 35 reverse 20 VF/VC (V) 30 CD (pF) 0.1 25 20 15 10 15 VC 10 5 forward 5 0 0 0 5 10 15 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Rev. 1.2, 04-Feb-16 0 1 2 3 4 5 6 7 8 IPP (A) Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current IPP Document Number: 82724 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD15A1-HD1 www.vishay.com Vishay Semiconductors 70 acc. IEC 61000-4-2 +8 kV contact discharge 60 VC-ESD (V) 50 40 30 20 10 0 -10 -20 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) Fig. 7 - Typical Clamping Performance at +8 kV Contact Discharge (acc. IEC 61000-4-2) 10 VC-ESD (V) 0 -10 -20 -30 acc. IEC 61000-4-2 -8 kV contact discharge -40 -50 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) Fig. 8 - Typical Clamping Performance at -8 kV Contact Discharge (acc. IEC 61000-4-2) 45 40 35 Transmission line pulse (TLP) test: tp = 100 ns reverse VC (V) 30 25 20 15 10 forward 5 0 0 20 40 60 ITLP 100 ns (A) Fig. 9 - Typical Peak Clamping Voltage vs. TLP current (TLP = transmission line pulse; tp = 100 ns) Rev. 1.2, 04-Feb-16 Document Number: 82724 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD15A1-HD1 www.vishay.com Vishay Semiconductors 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.65 [0.026] 0.55 [0.022] Orientation identification 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] 0.125 [0.005] ref. 0.55 [0.022] 0.45[0.018] 0.3 [0.012] 0.2 [0.008] 1.05 [0.041] 0.95 [0.037] 1 [0.039] solder resist mask solder pad 0.05 [0.002] Document no.: S8-V-3906.04-005 (4) Rev. 6 - Date: 15.July 2015 20812 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: 0.25 [0.010] 0.5 [0.020] soldermask opening ± 0.03 measured middle of the package Unreeling direction Bidirectional LLP1006-xx Pin 1 mark Top view Rev. 1.2, 04-Feb-16 Pad layout - view from top seen at bottom side Document Number: 82724 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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