BZT03-Series Datasheet

BZT03-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
• Medium power voltage regulators and medium power
transient suppression circuits
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
6.2 to 300
V
Test current IZT
2 to 100
mA
VZ specification
Pulse current
Int. construction
Single
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BZT03C6V2
BZT03C6V2-TR
5000 per 10" tape and reel
MINIMUM ORDER QUANTITY
25 000
BZT03C6V2
BZT03C6V2-TAP
5000 per ammopack
25 000
PACKAGE
PACKAGE NAME
SOD-57
WEIGHT
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
369 mg
UL 94 V-0
SOLDERING
CONDITIONS
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
I = 10 mm, TL = 25 °C
Ptot
3250
Tamb = 25 °C
Ptot
1300
PZRM
10
W
tp = 100 μs, Tj = 25 °C
PZSM
600
W
I = 10 mm, TL = constant
RthJA
46
On PC board with spacing 25 mm
RthJA
100
Junction temperature
Tj
175
°C
Storage temperature range
TS
- 65 to + 175
°C
VF
1.2
V
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction to ambient air
Forward voltage (max.)
Rev. 1.7, 11-Sep-12
IF = 0.5 A
UNIT
mW
K/W
Document Number: 85599
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT03-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
PART
NUMBER
MIN.
NOM. MAX.
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
CLAMPING (1)
IR at VR
ZZ at IZT1
TCVZ at IZT1
V(CL)R at IRMS

%/K
μA
V
MAX.
V
TYP.
MAX.
MIN.
MAX.
A
MAX.
STAND
OFF (2)
IR at VR
μA
V
MAX.
BZT03C6V2
5.8
6.2
6.6
100
1500
4.7
1
2
0
0.07
9.3
34
3000
5.1
BZT03C6V8
6.4
6.8
7.2
100
1000
5.1
1
2
0
0.07
10.2
31
2000
5.6
BZT03C7V5
7
7.5
7.9
100
750
5.6
1
2
0
0.07
11.3
26.5
1500
6.2
BZT03C8V2
7.7
8.2
8.7
100
600
6.2
1
2
0.03
0.08
12.3
24.4
1200
6.8
BZT03C9V1
8.5
9.1
9.6
50
20
6.8
2
4
0.03
0.08
13.3
22.7
50
7.5
BZT03C10
9.4
10
10.6
50
10
7.5
2
4
0.05
0.09
14.8
20.3
20
8.2
BZT03C11
10.4
11
11.6
50
4
8.2
4
7
0.05
0.1
15.7
19.1
5
9.1
BZT03C12
11.4
12
12.7
50
3
9.1
4
7
0.05
0.1
17
17.7
5
10
BZT03C13
12.4
13
14.1
50
2
10
5
10
0.05
0.1
18.9
15.9
5
11
BZT03C15
13.8
15
15.6
50
1
11
5
10
0.05
0.1
20.9
14.4
5
12
BZT03C16
15.3
16
17.1
25
1
12
6
15
0.06
0.11
22.9
13.1
5
13
BZT03C18
16.8
18
19.1
25
1
13
6
15
0.06
0.11
25.6
11.7
5
15
BZT03C20
18.8
20
21.2
25
1
15
6
15
0.06
0.11
28.4
10.6
5
16
BZT03C22
20.8
22
23.3
25
1
16
6
15
0.06
0.11
31
9.7
5
18
BZT03C24
22.8
24
25.6
25
1
18
7
15
0.06
0.11
33.8
8.9
5
20
BZT03C27
25.1
27
28.9
25
1
20
7
15
0.06
0.11
38.1
7.9
5
22
BZT03C30
28
30
32
25
1
22
8
15
0.06
0.11
42.2
7.1
5
24
BZT03C33
31
33
35
25
1
24
8
15
0.06
0.11
46.2
6.5
5
27
BZT03C36
34
36
38
10
1
27
21
40
0.06
0.11
50.1
6
5
30
BZT03C39
37
39
41
10
1
30
21
40
0.06
0.11
54.1
5.5
5
33
BZT03C43
40
43
46
10
1
33
24
45
0.07
0.12
60.7
4.9
5
36
BZT03C47
44
47
50
10
1
36
24
45
0.07
0.12
65.5
4.6
5
39
BZT03C51
48
51
54
10
1
39
25
60
0.07
0.12
70.8
4.2
5
43
BZT03C56
52
56
60
10
1
43
25
60
0.07
0.12
78.6
3.8
5
47
BZT03C62
58
62
66
10
1
47
25
80
0.08
0.13
86.5
3.5
5
51
BZT03C68
64
68
72
10
1
51
25
80
0.08
0.13
94.4
3.2
5
56
BZT03C75
70
75
79
10
1
56
30
100
0.08
0.13
103.5
2.9
5
62
BZT03C82
77
82
87
10
1
62
30
100
0.08
0.13
114
2.6
5
68
BZT03C91
85
91
96
5
1
68
60
200
0.09
0.13
126
2.4
5
75
BZT03C100
94
100
106
5
1
75
60
200
0.09
0.13
139
2.2
5
82
BZT03C110
104
110
116
5
1
82
80
250
0.09
0.13
152
2
5
91
BZT03C120
114
120
127
5
1
91
80
250
0.09
0.13
167
1.8
5
100
BZT03C130
124
130
141
5
1
100
110
300
0.09
0.13
185
1.6
5
110
BZT03C150
138
150
156
5
1
110
130
300
0.09
0.13
204
1.5
5
120
BZT03C160
153
160
171
5
1
120
150
350
0.09
0.13
224
1.3
5
130
BZT03C180
168
180
191
5
1
130
180
400
0.09
0.13
249
1.2
5
150
BZT03C200
188
200
212
5
1
150
200
500
0.09
0.13
276
1.1
5
160
BZT03C220
208
220
233
2
1
160
350
750
0.09
0.13
305
1
5
180
BZT03C240
228
240
256
2
1
180
400
850
0.09
0.13
336
0.9
5
200
BZT03C270
251
270
289
2
1
200
450
1000
0.09
0.13
380
0.8
5
220
BZT03C300
280
300
320
2
1
220
450
1000
0.09
0.13
419
0.72
5
240
Notes
(1) 10/1000 exp. falling pulse t = 1000 μs down to 50 %
p
(2) Stand-off voltage = recommended suplly voltage
Rev. 1.7, 11-Sep-12
Document Number: 85599
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT03-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
PART
NUMBER
MIN.
NOM. MAX.
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
CLAMPING (1)
IR at VR
ZZ at IZT1
TCVZ at IZT1
V(CL)R at IRMS

%/K
μA
V
MAX.
V
TYP.
MAX.
MIN.
MAX.
A
MAX.
STAND
OFF (2)
IR at VR
μA
V
MAX.
BZT03D6V2
5.6
6.2
6.8
100
1500
4.4
1
2
0
0.07
9.5
34
3000
4.8
BZT03D6V8
6.1
6.8
7.5
100
1000
4.8
1
2
0
0.07
10.5
31
2000
5.3
BZT03D7V5
6.75
7.5
8.25
100
750
5.3
1
2
0
0.07
11.6
26.5
1500
5.9
BZT03D8V2
7.4
8.2
9
100
600
5.9
1
2
0.03
0.08
12.6
24.4
1200
6.5
BZT03D9V1
8.2
9.1
10
50
20
6.5
2
4
0.03
0.08
13.7
22.7
50
7.1
9
10
11
50
10
7.1
2
4
0.05
0.09
15.2
20.3
20
7.9
BZT03D11
9.9
11
12.1
50
4
7.9
4
7
0.05
0.1
16.2
19.1
5
8.6
BZT03D12
10.8
12
13.2
50
3
8.6
4
7
0.05
0.1
17.5
17.7
5
9.3
BZT03D13
11.7
13
14.3
50
2
9.3
5
10
0.05
0.1
19.1
15.9
5
10.6
BZT03D15
13.5
15
16.5
50
1
10.6
5
10
0.05
0.1
21.8
14.4
5
11.6
BZT03D16
14.4
16
17.6
25
1
11.6
6
15
0.06
0.11
23.4
13.1
5
12.6
BZT03D18
16.2
18
19.8
25
1
12.6
6
15
0.06
0.11
26.3
11.7
5
14.4
BZT03D20
18
20
22
25
1
14.4
6
15
0.06
0.11
29.2
10.6
5
15.8
BZT03D22
29.8
22
24.2
25
1
15.8
6
15
0.06
0.11
31.9
9.7
5
17.2
BZT03D24
21.6
24
26.4
25
1
17.2
7
15
0.06
0.11
34.6
8.9
5
19.4
BZT03D27
24.3
27
29.7
25
1
19.4
7
15
0.06
0.11
39
7.9
5
21.5
BZT03D30
27
30
33
25
1
21.5
8
15
0.06
0.11
43.5
7.1
5
23.5
BZT03D33
29.7
33
36.3
25
1
23.5
8
15
0.06
0.11
47.5
6.5
5
25.8
BZT03D36
32.4
36
39.6
10
1
25.8
21
40
0.06
0.11
51.5
6
5
28
BZT03D39
35.1
39
42.9
10
1
28
21
40
0.06
0.11
56
5.5
5
31
BZT03D43
38.7
43
47.3
10
1
31
24
45
0.07
0.12
62
4.9
5
33.5
BZT03D47
42.3
47
51.7
10
1
33.5
24
45
0.07
0.12
67.5
4.6
5
36.5
BZT03D51
45.9
51
56.1
10
1
36.5
25
60
0.07
0.12
73
4.2
5
40
BZT03D56
50.4
56
61.6
10
1
40
25
60
0.07
0.12
81
3.8
5
44.5
BZT03D62
55.8
62
68.2
10
1
44.5
25
80
0.08
0.13
89
3.5
5
49
BZT03D68
61.2
68
74.8
10
1
49
25
80
0.08
0.13
97
3.2
5
54
BZT03D75
67.5
75
82.5
10
1
54
30
100
0.08
0.13
107
2.9
5
59
BZT03D82
73.8
82
90.2
10
1
59
30
100
0.08
0.13
117
2.6
5
65
BZT03D91
81.9
91
100
5
1
65
60
200
0.09
0.13
130
2.4
5
71
BZT03D100
90
100
110
5
1
71
60
200
0.09
0.13
143
2.2
5
79
BZT03D110
99
110
121
5
1
79
80
250
0.09
0.13
157
2
5
86
BZT03D120
108
120
132
5
1
86
80
250
0.09
0.13
172
1.8
5
93
BZT03D130
117
130
143
5
1
93
110
300
0.09
0.13
187
1.6
5
106
BZT03D150
135
150
165
5
1
106
130
300
0.09
0.13
213
1.5
5
116
BZT03D160
144
160
176
5
1
116
150
350
0.09
0.13
229
1.3
5
126
BZT03D180
162
180
198
5
1
126
180
400
0.09
0.13
256
1.2
5
144
BZT03D200
180
200
220
5
1
144
200
500
0.09
0.13
284
1.1
5
158
BZT03D220
198
220
242
2
1
158
350
750
0.09
0.13
314
1
5
172
BZT03D240
216
240
264
2
1
172
400
850
0.09
0.13
364
0.9
5
194
BZT03D270
243
270
297
2
1
194
450
1000
0.09
0.13
388
0.8
5
215
BZT03D10
Notes
(1) 10/1000 exp. falling pulse t = 1000 μs down to 50 %
p
(2) Stand-off voltage = recommended suplly voltage
Rev. 1.7, 11-Sep-12
Document Number: 85599
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT03-Series
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.0
3
25
I F– Forward Current (A )
50
50
2.5
2.0
Tj =25°C
1.5
1.0
0.5
0
2
7
0
94 9086a
PZSM – Non-Repetitive Surge Power
Dissipation (W )
Ptot –Total Power Dissipation ( W )
l
l=10mm
3
15mm
TL=constant
2
20mm
1
see Fig.1
40
80
120
160
Tj =25°C
1000
100
10
0.01
200
Tamb – Ambient Temperature ( °C )
94 9584
2.0
10000
0
0
1.5
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 1 - Epoxy Glass Hard Tissue, Board Thickness 1.5 mm,
RthJA  100 K/W
l
1.0
V F – Forward Voltage ( V )
94 9585
4
0.5
94 9586
Fig. 2 - Total Power Dissipation vs. Ambient Temperature
0.1
1
10
100
tp – Pulse Length ( ms )
Fig. 4 - Non Repetitive Surge Power Dissipation vs.
Pulse Length
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.7, 11-Sep-12
Document Number: 85599
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000