Data Sheet

WL
CS
P4
PMCM4401VNE
12V, N-channel Trench MOSFET
24 July 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Low threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
12
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
6
A
-
36
42
mΩ
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
A1
G
gate
A2
S
source
B1
D
drain
B2
S
source
Simplified outline
1
Graphic symbol
2
D
A
G
B
S
Transparent top view
017aaa255
WLCSP4 (OLPMCM4401VNE)
6. Ordering information
Table 3.
Ordering information
Type number
PMCM4401VNE
Package
Name
Description
Version
WLCSP4
WLCSP4: wafer level chip-size package; 4 bumps
(2 x 2)
OL-PMCM4401VNE
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMCM4401VNE
P
2
PIN A1
INDICATION
MARKING CODE
(EXAMPLE)
1
A
B
Top view, balls down
Fig. 1.
aaa-012880
WLCSP4 marking code description
PMCM4401VNE
Product data sheet
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PMCM4401VNE
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12V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
12
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
6
A
VGS = 4.5 V; Tamb = 25 °C
[1]
-
4.7
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
3
A
-
19
A
[2]
-
400
mW
[1]
-
1300
mW
-
12500 mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.1
A
Source-drain diode
IS
source current
PMCM4401VNE
Product data sheet
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 6 cm .
Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 2.
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 3.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-019061
102
ID
(A)
tp = 10 µs
Limit RDSon = VDS/ID
10
tp = 100 µs
tp = 1 ms
1
tp = 10 ms
DC; Tsp = 25 °C
10-1
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
PMCM4401VNE
Product data sheet
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24 July 2015
Min
Typ
Max
Unit
[1]
-
250
300
K/W
[2]
-
70
85
K/W
[3]
-
85
100
K/W
[3]
-
50
60
K/W
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
Min
Typ
Max
Unit
-
5
10
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-013734
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm .
duty cycle = 1
0.75
102
0.50
0.33 0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-013735
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.33
0.50
0.25
0.20 0.10
10
1
10-3
0.05
0.02
0.01
0
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 6.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM4401VNE
Product data sheet
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PMCM4401VNE
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12V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
12
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.4
0.6
0.9
V
IDSS
drain leakage current
VDS = 12 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
200
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-200
nA
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
-
36
42
mΩ
VGS = 4.5 V; ID = 3 A; Tj = 150 °C
-
50
57
mΩ
VGS = 2.5 V; ID = 3 A; Tj = 25 °C
-
46
54
mΩ
VGS = 1.8 V; ID = 1 A; Tj = 25 °C
-
60
77
mΩ
VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C
-
86
120
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 5 V; ID = 3 A; Tj = 25 °C
-
16
-
S
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
4.7
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 6 V; ID = 5 A; VGS = 4.5 V;
-
6
9
nC
QGS
gate-source charge
Tj = 25 °C
-
0.4
-
nC
QGD
gate-drain charge
-
1.8
-
nC
Ciss
input capacitance
VDS = 6 V; f = 1 MHz; VGS = 0 V;
-
335
-
pF
Coss
output capacitance
Tj = 25 °C
-
130
-
pF
Crss
reverse transfer
capacitance
-
120
-
pF
td(on)
turn-on delay time
VDS = 6 V; ID = 4 A; VGS = 4.5 V;
-
6.3
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
35.5
-
ns
td(off)
turn-off delay time
-
30
-
ns
tf
fall time
-
18
-
ns
PMCM4401VNE
Product data sheet
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
aaa-019062
18
4.5 V
aaa-019063
10-3
2.5 V 1.8 V
ID
(A)
ID
(A)
1.5 V
12
(1)
10-4
(2)
(3)
1.3 V
10-5
6
VGS = 1.1 V
0
Fig. 7.
0
1
2
3
VDS (V)
10-6
4
0
0.4
0.8
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8.
aaa-019064
120
1.3 V
1.5 V
1.7 V
1.8 V
80
1.2
Sub-threshold drain current as a function of
gate-source voltage
aaa-019065
140
RDSon
(mΩ)
120
RDSon
(mΩ)
VGS (V)
100
80
2.0 V
2.5 V
60
VGS = 4.5 V
40
40
Tj = 150 °C
Tj = 25 °C
20
0
0
6
12
ID(A)
0
18
Tj = 25 °C
Fig. 9.
Product data sheet
1
2
3
4
VGS (V)
5
ID = 4.4 A
Drain-source on-state resistance as a function
of drain current; typical values
PMCM4401VNE
0
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
aaa-019066
18
aaa-019067
1.5
ID
(A)
a
12
1.0
Tj = 150 °C
6
0.5
Tj = 25 °C
0
0
0.5
1
1.5
VGS (V)
0
-60
2
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
C
(pF)
1
(1)
(3)
102
(2)
(2)
0.5
0
-60
(3)
(1)
0
60
120
Tj (°C)
10
10-1
180
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) minimum values
(2) typical values
(3) maximum values
(1) Ciss
Product data sheet
10
VDS (V)
102
(2) Coss
(3) Crss
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
PMCM4401VNE
180
aaa-019069
103
VGS(th)
(V)
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-019068
1.5
0
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
aaa-019070
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
2
4
6
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
8
ID = 4.5 A; VDS = 6 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-019071
1.2
IS
(A)
0.8
Tj = 150 °C
0.4
Tj = 25 °C
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
PMCM4401VNE
Product data sheet
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PMCM4401VNE
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12V, N-channel Trench MOSFET
12. Package outline
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
A
D
PMCM4401VNE
B
A2
ball A1
index area
E
A
A1
detail X
C
y1 C
y
B
e2
A
ball A1
index area
1
2
v
w
b
C A B
C
X
e1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
A2
b
D
E
e1
e2
v
w
y
max 0.375 0.215 0.160 0.275 0.81 0.81
nom 0.345 0.200 0.145 0.260 0.78 0.78 0.40 0.40 0.15 0.05 0.05
min 0.315 0.185 0.130 0.245 0.75 0.75
mm
Note
Device back is metal coated on Drain potential.
Outline
version
pmcm4401vne-ssmos_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
15-07-07
PMCM4401VNE
Fig. 19. Package outline WLCSP4 (OL-PMCM4401VNE)
PMCM4401VNE
Product data sheet
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PMCM4401VNE
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12V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering
PMCM4401VNE
0.15
0.25
0.3
0.4
0.1
1
solder resist
solder paste = solderland
occupied area
0.4
1
Dimensions in mm
pmcm4401vne-ssmos_fr
Fig. 20. Reflow soldering footprint for WLCSP4 (OL-PMCM4401VNE)
PMCM4401VNE
Product data sheet
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12V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMCM4401VNE v.1
20150724
Product data sheet
-
-
PMCM4401VNE
Product data sheet
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12V, N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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Please consult the most recently issued document before initiating or
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PMCM4401VNE
Product data sheet
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12V, N-channel Trench MOSFET
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use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
14 / 15
PMCM4401VNE
NXP Semiconductors
12V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 July 2015
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 15